• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집A
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• pp.27-31
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• 2001

Hi-Nicalon SiC fiber reinforced SiC composites (SiC/SiC) have been fabricated by the reaction sintering process. Braided Hi-Nicalon SiC fiber with double interphases of BN and SiC was used in this composite system. The microstructures and the mechanical properties of reaction sintered SiC/SiC composites were investigated through means of electron microscopies (SEM, TEM, EDS) and bending tests. The matrix morphology of reaction sintered SiC/SiC composites was composed of the SiC phases that the composition of the silicon and the carbon is different. The TEM analysis showed that the residual silicon and the unreacted carbon were finely distributed in the matrix region of reaction sintered SiC/SiC composites. Reaction sintered SiC/SiC composites also represented proper flexural strength and fracture energy, accompanying the noncatastrophic failure behavior.

• 한국세라믹학회지
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• 제35권12호
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• pp.1336-1336
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• 1998

2단계 열탄소환원법으로 탄화규소 휘스커를 Ar과 H2분위기에서 기상-고상, 2단계, 기상-액상-고상 성장기구를 통해 각각 합성하였다. Ar분위기에서 탄화규소 휘스커는 다음과 같은 반응기구로 성장하였다. SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) 이때 전체 반응속도는 세번째 반응에 참여하는 탄소에 의해 지배되었다. 따라서 이 반응이 휘스커 합성의 율속반응으로 판단되었다. 한편 H2 분위기에서 탄화규소 휘스커는 다음과 같은 반응기구로 성장하였다.SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) 이때 전체 반응속도는 SiO(v) 기체의발생 속도에 의해 지배되었다. 따라서 첫번째 반응이 휘스커 합성의 율속 반응인 것으로 판단되었다.

• 한국세라믹학회지
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• 제35권12호
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• pp.1329-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• 한국재료학회지
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• 제14권3호
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• pp.175-180
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• 2004

SiC nanotubes were synthesized by CNT-confined reaction. Evaporated SiO gas reacted with carbon nanotubes by VS growth mechanism. By confineded reaction, carbon nanotube was changed to SiC nanotube, and synthesized SiC nanotube was filled partly by the gas reaction in the nanotubes. SiC nanotube's mean diameters were not changed than carbon nanotubes because of means ratio of $CO_2$ and SiO gas was maintained evenly during the process. This result was same of data of simulation. By TEM observastion, SiC nanotube was filled by reaction of inner wall of CNT and SiO gas through the VS reactions. Converted SiC nanotube's compositions were revealed Si and C of 1: 1 ratios at all sites of nanotube by EDS.

• 한국세라믹학회지
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• 제36권6호
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• pp.655-661
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• 1999

${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

• 한국결정성장학회지
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• 제5권2호
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• pp.109-121
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• 1995

SiC/Co 반응커플을 Ar/4 vol% $H_2$분위기하에서 $950^{\circ}C$에서 $1250^{\circ}C$ 범위에서 4시간에서 100시간까지 열처리하였다. $950^{\circ}C$ 이상의 온도에서의 고상반응으로 여러 가지 규소화물과 탄소석출이 형성되었다. 이 반응 zone에 있어서의 전형적인 반응층의 순서는 $SiC/CoSi + C/Co_2Si + C/Co_2Si/Co_2Si + C/{\cdots\cdots}/Co_2Si/Co$이었다. 그리고 탄소 석출거동을 동반한 주기적인 띠구조의 형성기구가 반응운동학과 열역학적인 고찰을 통하여 조사되어졌고 논하여졌다. 이 반응의 zone의 서장은 시간의 함수관계를 가지며 이러한 반응운동학이 반응상수의 측정을 통하여 제시되어진다. 또한 microhardness 측정을 통하여 반응 zone의 기계적인 물성이 조사되어졌다.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.19-24
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• 1996

The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.

• Bulletin of the Korean Chemical Society
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• 제20권4호
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• pp.422-426
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• 1999

The Grignard reactions of bis(chloromethyl)dimethylsilane (1) with trimethylchlorosilane (2) in THF give both the intermolecular C-Si coupling and intramolecular C-C coupling products. At beginning stage, 1 reacts with Mg to give the mono-Grignard reagent ClCH2Me2SiCH2MgCl (1) which undergoes the C-Si coupling reaction to give MC2Si(CH2SiMe3)2 3, or C-C coupling to a mixture of formula Me3SiCH2(SiMe2CH2CH2)nR1 (n = 1, 2, 3, ..; 4a, R1I = H: 4b, R1 = SiMe3). In the reaction, two reaction pathways are involved: a) Ⅰ reacts with 2 to give Me3SiCH2SiMe2CH2Cl 6 which further reacts with Mg to afford a Me2SiCH2Mel-SiCH2MgCl (Ⅱ) or b) I cyclizes intramolecularly to a silacyclopropane intermediate A, which undergoes a ring-opening polymerization by the nucleophilic attack of the intermediates I or Ⅱ, followed by the termination reaction with H2O and 2, to give 4a and 4b, respectively. As the mole ratio of 2/1 increased from 2 to 16 folds, the formation of product 3 increased from 16% to 47% while the formation of polymeric products 4 was reduced from 60% to 40%. The intermolecular C-Si coupling reaction of the pathway a becomes more favorable than the intramolecular C-C coupling reaction of the pathways b at the higher mole ratio of 2/1.

• 자원리싸이클링
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• 제18권3호
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• pp.42-48
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• 2009

고로 수쇄 슬래그에 알칼리 자극제(NaOH+$Na_2O.SiO_2$)를 첨가한 계는 보통 포틀랜드 시멘트의 수화반응과 다르게, 수화반응 초기에 높은 농도의 $OH^-,\;[SiO_4]^{4-}$ 이온이 존재하게 되므로, 유도기가 없이 수화반응이 빠르게 진행되며, 슬래그 입자 주위에 수화물에 의한 reaction rim을 형성한다 반응기간 1일부터 고로 수쇄 슬래그 입자 주위에 $0.6{\mu}m$의 reaction rim이 형성되었고, 반응기간이 증가함에 따라 reaction rim의 두께는 증가하여 28일에 $1{\mu}m$으로 성장하였으며, 미반응 고로 수쇄 슬래그 입자는 각진 형태에서 구형의 형태로 변화되었다. 슬래그 입자의 내부로부터 reaction rim으로 갈수록 Ca/Si의 몰비는 감소하는 경향을 나타냈었다. 그리고 반응기간이 경과할수록 슬래그 입자 내부와 reaction rim간의 Ca/Si 몰비 차이는 작아졌으며, 생성된 수화물은 저결정성의 Ca/Si 몰비가 1.5 미만인 CSH(I)이었다.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.185-191
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• 2017

Cadmium compounds with one dimension (1D) nanostructures have attracted attention for their excellent electrical and optical properties. In this study, vertically aligned CdTe-Si nanostructures with high density were synthesized by several simple chemical reactions. First, l D Te nanostructures were synthesized by silver assisted chemical Si wafer etching followed by a galvanic displacement reaction of the etched Si nanowires. Nanowire length was controlled from 1 to $25{\mu}m$ by adjusting etching time. The Si nanowire galvanic displacement reaction in $HTeO_2{^+}$ electrolyte created hybrid 1D Te-branched Si nanostructures. The sequential topochemical reaction resulted in $Ag_2Te-Si$ nanostructures, and the cation exchange reaction with the hybrid 1D Te-branched Si nanostructures resulted in CdTe-Si nanostructures. Wet chemical processes including metal assisted etching, galvanic displacement, topochemical and cation exchange reactions are proposed as simple routes to fabricate large scale, vertically aligned CdTe-Si hybrid nanostructures with high density.