• Title/Summary/Keyword: SI Business

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A R&D Model for Korean SI Companies' International Competitiveness (World Class SI 기업으로의 도약 : 핵심 경쟁력 확보를 위한 R&D 모델 개발)

  • Lee, Yeon-Hee;Choi, Jin-Young
    • Journal of Information Technology Services
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    • v.2 no.2
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    • pp.15-29
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    • 2003
  • This thesis suggests a R&D model for Korean SI companies who aggressively drive oversea business to overcome domestic market limitation and to become world class SI players. Even though there have been a lot of discussions on IT technologies and new business models, scientific approach to a R&D model for SI companies is rare due to its natural distinctiveness from manufacturing and general service domain. Therefore, this will be a flagship thesis to keep up our study. As business market environment gets more competitive, major Korean SI players will be confronted with much more keen competition among themselves. And as they are willing to expand their oversea market presence, they can not help struggling against global SI players. So, here we are presenting SI players the reinforcement of R&D as one of the key components to build up their own core competencies. That is, SI players have to adopt and evaluate fast changing and complicated IT technologies at the right time, and to apply them into a real business with cost-effective service delivery and operation processes internally. The ultimate purpose of all of these activities is to offer a SI company the value added business model based on its innovative technical capabilities and well refined service deliver model. For this purpose, we suggests, SI company's R&D has to play an important role of emerging technology verification/evaluation/utilization, value added business model creation, future innovation lead, standard body participation, and effective service delivery and quality system development. To become a more effective R&D organization, hybrid R&D, in which central R&D and divisional sub R&D work together, is considered as an idea model. The reliability of the R&D model for Korean SI companies', here we suggest, has been checked by SI companies R&D specialists and on-site business people.

An Analysis on Contract and Business Issues of SI Projects (SI 프로젝트 계약 및 수행 개선 이슈 분석)

  • Kim, Hyun-Soo
    • Journal of Information Technology Services
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    • v.2 no.1
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    • pp.35-49
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    • 2003
  • SI(System Integration) Projects need more efficient project processes. Having efficient contracting laws and regulations is one of the critical success factors for SI industry growth. Former researches developed a framework for efficient contracting laws and regulations for SI industry based on the characteristics of SI business and SI industry. However, the effectiveness of the proposed framework has not been analyzed. This paper tests the validity and effectiveness of the proposed framework. Emprical analysis has been performed to show consensus of each interested parties. Developers and outsourcers have some conflicts in several critical issues of SI project processes. However, comprehensive analysis shows overall consensus among interested parties.

New Process Development for Hybrid Silicon Thin Film Transistor

  • Cho, Sung-Haeng;Choi, Yong-Mo;Jeong, Yu-Gwang;Kim, Hyung-Jun;Yang, Sung-Hoon;Song, Jun-Ho;Jeong, Chang-Oh;Kim, Shi-Yul
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.205-207
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    • 2008
  • The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

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Temperature Dependence on Elastic Constant of SiC Ceramics (SiC 세라믹스 탄성률의 온도 의존성)

  • Im, Jong-In;Park, Byoung-Woo;Shin, Ho-Yong;Kim, Jong-Ho
    • Journal of the Korean Ceramic Society
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    • v.47 no.6
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    • pp.491-497
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    • 2010
  • In this paper, we employed the classical molecular dynamics simulations using Tersoff's potential to calculate the elastic constants of the silicon carbide (SiC) crystal at high temperature. The elastic constants of the SiC crystal were calculated based on the stress-strain characteristics, which were drawn by the simulation using LAMMPS software. At the same time, the elastic constants of the SiC ceramics were measured at different temperatures by impulse excitation testing (IET) method. Based on the simulated stress-strain results, the SiC crystal showed the elastic deformation characteristics at the low temperature region, while a slight plastic deformation behavior was observed at high strain over $1,000^{\circ}C$ temperature. The elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa by increasing the temperature from RT to $1,250^{\circ}C$. When compared to the experimental values of the SiC ceramics, the simulation results, which are unable to obtain by experiments, are found to be very useful to predict the stress-strain behaviors and the elastic constant of the ceramics at high temperature.

A Novel Driving Method for Cost Competitive a-Si TFT-LCD

  • Moon, Su-Hwan;Lim, Hong-Youl;Kim, Dae-Kyu;Lee, Min-Kyung;Ko, Kyung-Tai;Lee, Jun-Ho;Yoon, Sung-Hoe;Kim, Byeong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.470-473
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    • 2009
  • We have developed a novel driving method, Six times Rate Driving(SRD) for the purpose of making cost competitive TFT-LCD. By applying SRD method to an a-Si TFT-LCD, the driving rate was increased six times as it was named but the number of data lines and so its D-Ics were reduced to one sixth of the conventional one which resulted in the cost saving of that much. We also newly designed the gate driver in order to avoid any expansion of the bezel width caused by applying SRD. Our newly developed driving technology, SRD was successfully applied to 7.0-inch WSVGA (1024 ${\times}$ 600) TFT-LCD which can be driven with only one data D-IC and here introduced.

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2.22-inch qVGA a-Si TFT-LCD Using a 2.5 um Fine-Patterning Technology by Wet Etch Process

  • Lee, Jae-Bok;Park, Sun;Heo, Seong-Kweon;You, Chun-Ki;Min, Hoon-Kee;Kim, Chi-Woo
    • Journal of Information Display
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    • v.7 no.3
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    • pp.1-4
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    • 2006
  • 2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

Molecular dynamic studies for elastic constant of SiC crystal at high temperature (고온에서 SiC 결정의 탄성율에 대한 분자동역학연구)

  • Park, B.W.;Shin, H.R.;Kim, J.H.;Im, J.I.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.5
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    • pp.232-236
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    • 2010
  • Silicon carbide (SiC) ceramics are widely used in the application of high-temperature structural devices due to their light weight as well as superior hardness, fracture toughness, and temperature stability. In this paper, we employed classical molecular dynamics simulations using Tersoff's potential to investigate the elastic constants of the SiC crystal at high temperature. The stress-strain characteristics of the SiC crystal were calculated with the LAMMPS software and the elastic constants of the SiC crystal were analyzed. Based on the stress-strain analysis, the SiC crystal has shown the elastic deformation characteristics at the low temperature region. But the slight plastic deformation behavior was shown as applied the high strain over $1,000^{\circ}C$. Also the elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa as increased the temperature to $1,250^{\circ}C$.

Service Distribution Strategy Development for MICE in Nakhon Si Thammarat Province, Thailand

  • Pannapa KHIAWNOI;Sor sirichai NAKUDOM
    • Journal of Distribution Science
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    • v.22 no.2
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    • pp.63-69
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    • 2024
  • Purpose: This study analyses the Service Development Strategy for MICE in Nakhon Si Thammarat Province, Thailand aim to 1) Investigate the current and desirable conditions of the service businesses in order to support the MICE 2) Undertake a SWOT analysis of service businesses with regard to supporting the MICE 3) Analyze service business distribution strategies development to support the MICE in Nakhon Si Thammarat Province. Research design, data and methodology: This study divided into 2 phases: Phase 1 involved qualitative research to study the process of service businesses in their support of the MICE. Phase 2 involved research and development with regard to the development of innovative service business development strategies to support the MICE. Results: The article showed that company executives and related parties understand the meaning of service business management to support the MICE to consist of 8 indicators: quality of meeting venues, access to meeting venues, meeting infrastructure, government support, additional activities in addition to meetings, the image and reputation of the city, MICE personnel, and security. Conclusions: Strategies for developing service business innovations to support the MICE consist of a proactive strategy, a preventive strategy, and a remedial strategy together with defensive strategies.

ASG(Amorphous Silicon TFT Gate driver circuit) Technology for Mobile TFT-LCD Panel

  • Jeon, Jin;Lee, Won-Kyu;Song, Jun-Ho;Kim, Hyung-Guel
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.395-398
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    • 2004
  • We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240$^{\ast}$320) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

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