• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.93-94
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• 2005

Cu metallization using electrochemical plating(ECP) has played an important role in back end of line(BEOL) interconnect formation. In this work, we studied the optimized copper thickness using Bottom-up Gap-fill in Cu ECP, which is closely related with the pattern dependencies in Cu ECP and Cu dual damascene process at 0.13 ${\mu}m$ technology node. In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge, Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness.