• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.118-119
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• 2009

This paper presents the feature profile evolution silicon deep trench etching, which is very crucial for the commercial wafer process application. The silicon deep trenches were etched with the SF6 gas & Hbr gas based process recipe. The optimized silicon deep trench process resulted in vertical profiles (87o~90o) with loading effect of < 1%. The process recipes were developed for the silicon deep trench etching applications. This scheme provides vertically profiles without notching of top corner was observed. In this study, the production of SF6 gas based silicon deep trench etch process much more strongly than expected on the basis of Hbr gas trench process that have been investigated by scanning electron microscope (SEM). Based on the test results, it is concluded that the silicon deep trench etching shows the sufficient profile for practical MOS FET silicon deep trench technology process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.868-871
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• 2003

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability. Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of $1000^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using $SF_6/O_2$ and $CF_4/O_2$ gas mixture. Etch rate have been investigated as a function of oxygen concentration in the gas mixture, RF power, and working pressure. Etch rate was measured by surface profiler and FE-SEM. $SF_6/O_2$ gas mixture has been shown high etch rate than $CF_4/O_2$ gas mixture. Maximum etch rate appeared at 450W of RF power. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40%, and the superior anisotropic cross section was observed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.2
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• pp.95-101
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• 1999

The electron energy distributions function were analysed in sulIitur hexaflowide at E/N : 500~800(Td) for a case of non-equilibrium region in the nran electron energy. This papa- describes the electron transport characteristics in $ SF_6$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation Irethod using a set of electron collision cross sectioos determined by the authors and the values of electron swarm parameters. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.region.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.2
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• pp.85-90
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• 1998

This paper describes the breakdown characteristics of GIS by the free conducting particles under alternating voltage. If the conducting particles are present within the GIS, they can cause decrease in breakdown voltages. Various materials and sizes of free conducting particles were used to study the liftoff electric field and breakdown voltage. The measured lift-off electric fields were compared with the calculated ones for copper, steel and aluminium wire-type conducting particles. As an experimental result, it is shown that the breakdown voltages of the GIS chamber with conducting particles were lower than those without conducting particles, and were markedly dependent on the particle material and the particle sizes. Free conducting particles are important factor in particle-triggered breakdown of the GIS.he GIS.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.11B no.4
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• pp.129-136
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• 2001

In order to evaluate the dielectric recovery strength for GCBs, two equations have been usually utilized. One is the empirical formula obtained from a series of tests and the other is the theoretical formula obtained from the streamer theory. In this paper, both methods were applied to predict the small capacitive current interruption capability of model circuit breakers and were investigated in terms of the reliability by comparing the simulation results with test ones.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.476-481
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• 1999

Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-$190^{\circ}C$ compared with that of room temperature, however the etch profile was not still fence-free. In Ar/$SF_6$ Plasma, fence-free Pt etching was possible. As the ratio of $SF_6$ gas flow is more than 14% of total gas flow, the etch profile had no fence. Chemical reaction seemed to take place in the etch process.

• 전기의세계
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• v.29 no.5
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• pp.315-320
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• 1980

It has been appeared and widely used today SF6 Gas Insulated Substation(Hereafter called GIS) for the power supply to the densely populated area due to the superior insulation withstand ability of SF6 Gas. And to maximize the compact effect of this substation, it is normal practice to connect underground cables. If it is possible to elieminate the redundant lightning arresters using the physical characterestics of travelling waves in underground cables, economical advantages can be obtained together with easy maintenances. It is presented in this paper the possiblity of eliminating the transformer protection lightning arresters under some conditions for the 154kV GIS's (BIL:750kV) which Korea Electric Co. plans to construct using the general purpose digital computer program.

• 한국전산유체공학회:학술대회논문집
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• 2008.03b
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• pp.695-698
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• 2008

Self-blast circuit breakers utilize the energy dissipated by the arc itself to create the required conditions for arc quenching during the current zero. During the arcing period, high pressure, temperature and radiation of the arc could burn in pure SF6 gas and PTFE nozzle. Ablated nozzle shape and $SF_6$-PTFE mixture vapor affect the performance of an self-blast circuit breaker. After a number of tests, nozzle in circuit breaker is disassembled, a section of ablated nozzle is investigated precisely. Using computational fluid dynamics, the conservation equation for the gas and temperature, velocity and electric fields within breaker is solved. Before applying a section model, developed program is verified with experimental data. Performance of ablated nozzle shape is compared with original model through analysis program.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.288-291
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• 1996

The surface properties after plasma etching of TiW solutions using the chemistries of BCl$_3$ and SF$\_$6/ gases with varying mixing ratio have been investigated using X-ray photoelectron spectroscopy. The elements of C, Cl, F, O and S are observed on the etched TiW films. After plasma etching with SF$\_$6/ gas, Ti-S bond are detected on the samples and Ti-S bond makes a role of passivation layer that surpresses Ti-O formation. After plasma etching wish BCl$_3$ gas, Ti are easily removed but W are hardly etched. As a results, W/Ti are increased on the etched sample.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2063-2065
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• 1999

PD pulses have about one nanosecond rise time in the $SF_6$ gas insulation. These pulses propagate through GIS chamber to PD sensors in the form of the electromagnetic radiation. In this paper, we investigated the characteristics of disc sensors and monopole antenna, by putting high frequency signals into the test cell in $SF_6$ gas by means of a Ins rise time pulse generator and 60Hz power supply respectively. Also, we measured PD quantity from the needle electrode and the location effect of output terminal beneath the disk sensors.