• 한국작물학회지
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• 제63권4호
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• pp.338-359
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• 2018

Soybean (Glycine max L.), a major part of Asian diet, is consumed primarily for its nutritional value. However, poor storage stability often leads to loss of nutritional value or deterioration in quality. This study focused on the storage stability of soy flour obtained from raw and roasted "Saedanbaek" soybeans packed in polyethylene (PE) and polypropylene (PPE) film bags that were stored at $4^{\circ}C$, $20^{\circ}C$ and $45^{\circ}C$ for 48 weeks. The early acid values (diene and p-anisidine) of raw soybean flour (RSF) at high temperature (HT) were higher than those at refrigerated temperature (RFT) and room temperature (RT) during 48 and 12 to 36 weeks, respectively. In the case of roasted soybean flour (ROSF), which was stored at RFT and RT, the acid and conjugated diene values gradually increased after 24 weeks. In RSF, the peroxide value increased since the beginning of the $24^{th}$ week. The p-anisidine value also increased during 12 to 36 weeks but was much lower than the values obtained from HT storage. As the peroxide values decreased, the p-anisidine values increased, indicating an inverse relationship. Lipoxygenase activity of ROSF at all storage conditions was lower than RSF. Several differences were observed between the packing materials used. This study could, therefore, provide useful information for the industrial use of soybean flour (SF).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• 한국자기학회지
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• 제10권2호
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• pp.62-66
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• 2000

비자성사이층 Cu 두께(30 $\AA$, 35 $\AA$, 40 $\AA$)를 달리한 glass(7059)/N $i_{81}$$Fe_{19}$(70 $\AA$)/Co(10 $\AA$)/Cu(t $\AA$)/Co(15 $\AA$)/N $i_{81}$$Fe_{19}$(35 $\AA$)N $i_{25}$M $n_{75}$(250 $\AA$)Ta(50 $\AA$) 스핀밸브박막(spin valve film; SVF) 을 dc 스퍼터링으로 제작하였다 이 시편을 진공 열처리 한 후 자유자성층의 상호결합세기(interlayer coupling field; $H_{inf}$ )와 보자력(coercivity; $H_{sf}$ )에 대한 열처리 순환횟수 및 비자성층 두께 의존성에 관련한 자기저항특성을 조사했다. Cu 두께가 35 $\AA$인 SVF의 경우에 교환결합세기(exchange coupling field; $H_{ex}$)가 620 Oe, 보자력( $H_{c}$)이 280 Oe 및 자기저항(magnetoresistance; MR)비가 2.5%를 보였다. $H_{inf}$ 와 $H_{cf}$ 는 모든 SVF가 열처리 순환 횟수에 따라 증가하는 경향을 보이다가 일정한 값으로 안정화되며 Cu 35 $\AA$인 경우는 열처리 순환 횟수 15회 이후에 각각 120 Oe 및 75 Oe를 유지한다. $H_{inf}$ 및 $H_{cf}$ 가 열처리 순환횟수 증가에 따라 증가하는 것은 열처리 효과에 의해 Cu층과 Co층의 계면섞임 증대에 의한 유효한 Cu층 두께 감소에 기인한다. Cu가 적정둘레 35 $\AA$ 보다 더 얇아지거나 두꺼워지면 계면섞임에 의한 효과는 각각 더 증대하거나 둔화되는 것으로 분석된다.으로 분석된다..