• Biomolecules & Therapeutics
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• v.5 no.4
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• pp.369-375
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• 1997

General pharmacological effects of SB-31$^{R}$, the extracts of Pulsatilla koreana, were investigated in mice, rats and guinea-pigs. Intravenous injection of SB-31 (3 and 6 ml/kg) produced almost no effect on central nervous system no effects on the general symptom and behaviors of mice, spontaneous locomotor activity, pentobarbital- induced sleeping time , rotared performance , electroshock and pentylenetertrazole -induced seizures, acetic acid-induced writhing and normal body temperature in mice. SB-31 showed little effects on the spontaneous movement of the isolated ileum and contraction induced by agonists in isolated ileum, suggesting no influence on autonomic nervous system. Administration of SB-31 also did not show any effect on blood pressure in conscious rats. However, a slight decrease in heart rate was observed at high doses (6 and 10 ml/kg) of SB-31 in conscious rats. Similarly, a slight increase in respiratory rate was observed at 6 m1/kg of SB-31 in anesthetized rats. SB-31 did not produce any effect at the dose of 3 ml/kg, but showed a tendency to increase the urinary volume at 6 ml/kg, and produced a decrease in urinary excretions of N $a_{+}$and $K_{+}$at 6 ml/kg. However, transport capacity within the gastrointestinal tract and the secretion of the gastric juice were not influenced by 6 ml/kg of SB-31. In conclusion, these results suggest that SB-31 did not pro-duce any acute effects on the central nervous system, autonomic nervous system, respiratory and circulatory systems, digestive system and kidney function at the dose of below 3 ml/kg.ml/kg.

• Analytical Science and Technology
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• v.13 no.6
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• pp.731-735
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• 2000

The acid digestion bomb pretreatment method for the determination of antimony in a commercial fire retardant material sample (DBDPE-$Sb_2O_3$) was studied. DBDPE-$Sb_2O_3$ sample was digested with $H_2SO_4:HCl$(1:2) mixture in digestion bomb at $220^{\circ}C$ for 2 hrs. and antimony was determined by atomic absorption spectrophotometry. Recovery of 99.6-99.8% and C.V. of 0.94-1.07% for Sb was obtained for spiked real samples. In the present method, the analytical results obtained for antimony were 40.3 and 36.3% (w/w), respectively.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.297-302
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• 2007

With aids of square wave voltammetry (SWV) the redox behavior for various combination of polyvalent ions (Sb+Fe, Sb+Zn, Sb+Ce+Ti+Zn) was investigated in alkali-alkaline earth-silica CRT (Cathode Ray Tube) glass melts. The current-potential curve so called voltammogram was produced at temperature range of 1400 to $1000^{\circ}C$ under the scanned potential between 0 and -800 mV at 100 Hz. In the case of the Sb+Fe and Sb+Zn doped melts, peak for $Sb^{3+}/Sb^0$ shown voltammogram was shifted to negative direction comparing to the only Sb doped melts. However, according to voltammogram of Sb+Ce+Ti+Zn doped melt, Ti and Ce except Zn had hardly any influence on the redox reaction of Sb. Based on the temperature dependence of the peak potential, standard enthalpy (${\Delta}H^0$) and standard entropy (${\Delta}S^0$) for the reduction of $Fe^{3+}$ to $Fe^{2+}$, $Sb^{3+}$ to $Sb^0$, $Zn^{2+}$ to $Zn^0$ and $Ti^{2+}$ to $Ti^0$ in each polyvalent ion combination of CRT glass melts were calculated.

• Korean Journal of Radiology
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• v.23 no.2
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• pp.189-201
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• 2022

Objective: To compare the outcomes of radiofrequency ablation (RFA) using dual switching monopolar (DSM), switching bipolar (SB), and combined DSM + SB modes at two different interelectrode distances (25 and 20 mm) in an ex vivo study, which simulated ablation of a 2.5-cm virtual hepatic tumor. Materials and Methods: A total of 132 ablation zones were created (22 ablation zones for each protocol) using three separable clustered electrodes. The performances of the DSM, SB, and combined DSM + SB ablation modes were compared by evaluating the following parameters of the RFA zones at two interelectrode distances: shape (circularity), size (diameter and volume), peritumoral ablative margins, and percentages of the white zone at the midpoint of the two electrodes (ablative margin at midpoint, AMm) and in the electrode path (ablative margin at electrode path, AMe). Results: At both distances, circularity was the highest in the SB mode, followed by the DSM + SB mode, and was the lowest in the DSM mode. The circularity of the ablation zone showed a significant difference among the three energy groups (p < 0.001 and p = 0.002 for 25-mm and 20-mm, respectively). All size measurements, AMm, and AMe were the greatest in the DSM mode, followed by the DSM + SB mode, and the lowest were with the SB mode (all statistically significant). The white zone proportion in AMm and AMe were the greatest in the SB mode, followed by the DSM + SB mode and DSM in general. Conclusion: DSM and SB appear to be complementary in creating an ideal ablation zone. RFA with the SB mode can efficiently eradicate tumors and create a circular ablation zone, while DSM is required to create a sufficient ablative margin and a large ablation zone.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.305-305
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• 2011

Type-II 반도체 나노 구조는 그것의 band alignment 특성으로 인해 광학 소자에 다양한 응용성을 가진다. 특히, 대표적인 Type-II 반도체 나노 구조인 InSb/InAs 양자점의 경우, 약 3~5 ${\mu}m$의 mid-infrared 영역의 spectral range를 가지므로, 장파장을 요하는 소자에 유용하게 적용될 수 있다. 또한, Type-II 반도체 나노 구조의 밴드 구조를 staggered gap 혹은 broken gap 구조로 조절함으로써 infrared 영역 광소자의 전자 구조를 유용하게 바꾸어 적용할 수 있다. 최근, GaSb wafer 위에 InSb/InAsSb 양자점을 이용하여 cutoff wavelength를 6 ${\mu}m$까지 연장한 IR photodetector의 연구도 보고되고 있다. 하지만, GaSb wafer의 경우 그것의 비용 문제로 인해 산업적 적용이 쉽지 않다는 문제가 있다. 이러한 문제를 해결하기 위해 GaAs wafer와 같은 비용 효율이 높은 wafer를 사용한 연구가 필요할 것이다. 본 연구에서는 Molecular Beam Epitaxy(MBE)를 이용하여 undoped InAs wafer 와 semi-insulating GaAs wafer 상에 InSb 양자 구조를 형성한 결과를 보고한다. InSb 양자 구조는 20층 이상의 다층으로 형성되었고, 두 가지 경우 모두 400${\AA}$ spacer를 사용하였다. 단, InAs wafer 위에 형성한 InSb 양자 구조의 경우 InAs spacer를, GaAs wafer 위에 형성한 양자 구조의 경우 InAsSb spacer를 사용하였다. GaAs wafer 위에 양자 구조를 형성한 경우, InSb 물질과의 큰 lattice mismatch 차이 완화 뿐 아니라, type-II 밴드 구조 형성을 위해 1 ${\mu}m$ AlSb 층과 1 ${\mu}m$ InAsSb 층을 GaAs wafer 위에 미리 형성해 주었다. 양자 구조 형성 방법도 두 종류 wafer 상에서 다르게 적용되었다. InAs wafer 상에는 주로 일반적인 S-K 형성 방식이 적용된 것에 반해, GaAs wafer 상에는 migration enhanced 방식에 의해 양자 구조가 형성되었다. 이처럼 각 웨이퍼에 대해 다른 성장 방식이 적용된 이유는 InAsSb matrix와 InSb 물질 간의 lattice mismatch 차이가 6%를 넘지 못하여 InAs matrix에 비해 원하는 양자 구조 형성이 쉽지 않기 때문이다. 두 가지 경우에 대해 AFM과 TEM 측정으로 그 구조적 특성이 관찰되었다. 또한 infrared 영역의 소자 적용 가능성을 보기 위해 광학적 특성 측정이 요구된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.496-500
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• 2019

In this study, we investigate the effect of an Sb-deficiency on the thermoelectric properties of double-filled n-type skutterudite ($In_{0.05}Yb_{0.15}Co_4Sb_{12-x}$). Samples were prepared by encapsulated induction melting, consecutive long-time annealing, and finally spark plasma sintering processes. The Sb-deficient sample contained a $CoSb_2$ secondary phase. Both the double-filled n-type skutterudite pristine and Sb-deficient samples showed metallic behavior in electrical conductivity with increasing temperature. The carrier concentration of the Sb-deficient sample decreased compared with that of the pristine sample. Due to a decrease in carrier concentration, the Sb deficient sample showed decreased electrical conductivity and an increased Seebeck coefficient compared with the conductivity and coefficient of the pristine sample. Furthermore, the Sb deficient sample showed an increase in the power factor (${\sigma}{\cdot}S^2$); the power factor maximum shifted to athe lower temperature side than ones of the pristine sample. As a result, the Sb-deficient sample represents an improved average figure of merit (ZT) and a $ZT_{max}$ temperature lower than that of the pristine sample. Therefore, we propose that Sb-deficient double-filled n-type skutterudite thermoelectric material ($In_{0.05}Yb_{0.15}Co_4Sb_{12-x}$) be used in the 573~673 K temperature range.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.1
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• pp.5-14
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• 1977

"Electrical Properties of Barium Titanates with Addition Sb2O3." PTC BaTiO3 in low resistance at room temperature was prepatred. Al2O3, SiO2 and TiO2 were doped with a view to improving reproduction. Sb2O3 was doped as impurity in order to control of resistivity of the specimens. The relations between the amount of Sb3O3 and electrical properties wereinvestigated. Of the compositions studied, additions of 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 and 0.16~0.25wt% Sb2O3 to BaTiC3 was low resistivity in 14-300 ohm-cm.00 ohm-cm.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1996.04a
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• pp.174-174
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• 1996

Extract of Pulsatilla Koreana (SB-31) showed promising antitumor activity in vitro (J. Kor Cancer Asso 26:959-963, 1994). We studied the mechanism of cytotoxicity of SB-31. HL-60 cells were cocultivated with various concentrations of SB-31 for 5 hours. The DNAs from HL-60 cells exposed to SB-31 showed the ladder pattern typical of apoptosis. Effect of SB-31 on topoisomerase I activity was determined by slight modification of the method by E. Aflalo(1994). The pBR322 DNA showed dose-dependent increase of R-Form DNA upon incubation with SB-31. The topoisomerase Ⅰ-like activity (Increase of R-Form DNA) was accentuated with higher dose of SB-31. It is postulated that SB-31, which is a fermentation product of Pulsatilla koreana and which loses its activity when kept in ambient temperature for more than 96 hours, may contain topoisomerase Ⅰ-like activity and the enhanced excessive single strand breaks induced by 55-31 may result in apoptosis.

• Fibers and Polymers
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• v.1 no.1
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• pp.6-11
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• 2000

In the polycondensation reaction of polyethyleneterephthalate(PET), $Sb_2$$O_3$, can react effectively as a catalyst, if physically transformed. $Sb_2$$O_3$ powder is transformed into liquid solution by dissolving in ethylene glycol(EG). Homogeneous catalyst is made by mixing this liquid solution with glycols having different solubility. The efficient reaction of PET polymerization is expected by using homogeneous catalyst. PET was synthesized using homogeneous catalysts of 4 wt.% $Sb_2$$O_3$ solution dissolved in glycol[EG, 2,2-bis(4-(2-hydroxyethoxy)phenol)propane(BHPP), neopentyl glycol(NPO), and 1,3-propandiol(PD)]. PET using EG-BHPP($Sb_2$$O_3$) catalysts shows the highest I.V. within a reaction time of 120 min. In the p-d analysis, PET using EG-BHPP($Sb_2$$O_3$) catalysts has the fastest propagation rate and slowest degradation rate. EG-BHPP($Sb_2$$O_3$) catalysts are more efficient than EG($Sb_2$$O_3$) catalysts and $Sb_2$$O_3$ powder catalysts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.86-90
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• 2017

This work reports the phase-change behavior and thermal stability of doped GeSbTe/GeSbTe bilayers. We prepared the bilayers using RF sputtering, and annealed them at annealing temperature ranging from $100^{\circ}C$ to $400^{\circ}C$. The sheet resistance of the bilayer decreased and saturated with increasing annealing temperature, and the saturated value was close to that of pure GeSbTe film. The surface of the bilayer roughened at $400^{\circ}C$, which corresponds to the surface roughening of doped GeSbTe film. Mixed phases of face-centered cubic and hexagonal close-packed crystalline structures were identified in the bilayers annealed at elevated temperature. These results indicate that the phase-change behavior of the bilayer depends on the concurrent phase-transitions of the two GeSbTe-based films. The dopants in the doped GeSbTe film were diffused out at annealing temperatures of $300^{\circ}C$ or higher, which implies that the thermal stability of the bilayer should be considered for its application in phase-change electronic devices.