• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• Herbal Formula Science
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• v.16 no.2
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• pp.155-162
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• 2008

Objectives : The present study was designed to investigate corelation between mix proportion of Scutellaria baicalensis (SB) and Coptis chinensis (CC) on lipopolysaccharide (LPS)-induced TYPE-1 interferon production. Methods : I examined TYPE-1 interferon, interferon regulating factor (IRF)-1,7 and interleukin(IL)-10 production on LPS-induced RAW264.7 cells to evaluate inhibitory effect of mix proportion of SB and CC using real time PCR. Results : Mixture of SB and CC regulated TYPE-1 interferon and IRF-1,7 mRNA expression with SB dose dependent manner, while maintained IL-10 mRNA expression on LPS-induced RAW264.7 cells. Conclusion : In mixture of SB and CC, SB plays a key role in reducing TYPE-1 interferon through inactivation IRF-1,7. Furthermore mixture of SB and CC maintained IL-10 mRNA level. Collectively, this results suggest that SB confer beneficial effects in autoimmune diseases clinically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Journal of Powder Materials
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• v.18 no.5
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• pp.401-405
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• 2011

Half-heusler phase ZrNiSn is one of the potential thermoelectric materials for high temperature application. In an attempt to investigate the effect of Sb doping on thermoelectric properties, half-heusler phase $ZrNiSn_{1-x}Sb_x$ ($0{\leq}x{\leq}0.08$) was synthesized by mechanical alloying of stoichiometric elemental powder compositions, and consolidated by vacuum hot pressing. Phase transformations during mechanical alloying and hot consolidation were investigated using XRD. Sb doped ZrNiSn was successfully produced in all doping ranges by vacuum hot pressing using as-milled powders without subsequent annealing. Thermoelectric properties as functions of temperature and Sb contents were evaluated for the hot pressed specimens. Sb doping up to x=0.04 in $ZrNiSn_{1-x}Sb_x$ was shown to be effective on thermoelectric properties and the figure of merit (ZT) was shown to reach to the maximum at x=0.02 in this study.

• Journal of Korea Foundry Society
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• v.6 no.2
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• pp.93-103
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• 1986

It is very important to obtain wear resistant ductile iron by adding more economical alloying elements. In this study, 10 heat of Mg-treated ductile iron were made according to Sb content (0-0.1% Sb). Each melt was tasted to 30 ${\o}test$ bars in $CO_2$ mold under the same condition and inspected wear characteristics, mechanical properties and microstructures. The results obtained from this study are as follows; 1. It is confirmed that Sb should be a simple and useful additive for improving wear resistance in ductile iron. 2. Hardness of ferrite and pearlite is improved with increasing Sb amount in ductile iron. 3. For ductile iron, the recommended ladle addition of Sb amount is to 0.02-0.03%. 4. Sb has adverse influence on spheroidizing of graphite if the amount is over 0.04%.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.32-35
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• 1979

When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.

• Journal of the Mineralogical Society of Korea
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• v.4 no.2
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• pp.141-146
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• 1991

Minerals of system Ag-Sb have been found in iead-zinc (-silver) ores from the Dongjeom and the Taebaeg ore deposits, which were formed at later stage of the Yeonhwa 1 mine mineralization. The Ag-Sb minerals are intergrown intimately with galena, pyrargyrite and alabandite. Their chemical compositions as determined by electron microprobe analyser show that they are chracterized by relatively high content of S, up to 5.89 atomic percent. Also the composition of the minerals may be separated into two: Ag3.89 Sb1.00-Ag7.19 Sb1.00 and Ag2.96 Sb1.00-Ag4.00 Sb1.00.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• Bulletin of the Korean Chemical Society
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• v.15 no.2
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• pp.115-118
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• 1994

Samples of ($Bi_{2-x}Sb_x)PbSr_2Ca_2Cu_3O_y$, compositions with x=0.0, 0.1, and 0.2 were prepared by solid-state reaction. The solubility of Sb into the 2223 phase is lower than 0.05 for the ratio of Sb/Bi. The lack of stability of the Sb-substituted $Bi_2O_2$ double layers is likely to cause the solubility low. There is no great dependence of lattice parameters on the Sb-content, and bonds around the square-pyramidal Cu atom are not affected by the $Sb^{3+}$ ion substituted. The superconducting transition temperature of this system is decreased gradually with increase of Sb, which is tentatively attributable to the perturbation of the Bi 6p-O 2p band and/or to the low volume fraction of the 2223 phase.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.749-752
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• 1995

Electronic structures of the Heusler compounds, XMnSb (X=Ni, Pd, and Pt) are investigated systematically by using the linearized muffiu-tin orbital (LMTO) band method. LMTO band calculations yield that, by including the spinorbit interactions, the NiMnSb and PtMnSb are half-metallic, while PdMnSb is normal metallic at the experimental lattice constant. The effect of the spin-orbit interaction is substantial in PtMnSb, in contrast to NiMnSb and PdMnSb. The calculated X d and Mn 3d angular momentum projected local density of states's reveal that the hybridization between the Mn 3d X d states increases from X = Pt to Pd and Ni.