• Journal of the Korea Convergence Society
• /
• v.2 no.3
• /
• pp.25-32
• /
• 2011

Current Web space does not provide standard integrated environment. This, especially in case of large task, can be a cause of low performance of task processing. We proposed an integrated space(called SB space) in this paper through which various actors can share their mutual process in processing a task together. SB space can be installed as a Web site and can be used effectively with Web space. This actually means the expansion of the Web space, which allows us to improve the productivity of the Web space notably. In this paper, this is proved through a concrete case study.

• Economic and Environmental Geology
• /
• v.26 no.3
• /
• pp.327-335
• /
• 1993

Phase relations in the system Pd-Sb-Te were investigated at $1000^{\circ}$, $800^{\circ}$, and $600^{\circ}C$, using the sealed-capsule technique; the quenched products were studied by reflected light microscopy, X-ray diffraction, and electron microprobe analysis. At $1000^{\circ}C$, the solid phases Pd, $Pd_{20}Sb_7$, $Pd_8Sb_3$, $Pd_{31}Sb_{12}$, and $Pd_5Sb_2$ are stable with a liquid phase that occupies most of the isothermal diagram. Additional solid phases at $800^{\circ}C$ are $Pd_5Sb_3$, PdSb, $Pd_8Te_3$, $Pd_7Te_3$, and a continuous $Pd_{20}Te_7-Pd_{20}Sb_7$ solid solution becomes stable. At $600^{\circ}$, $PdSb_2$, $Pd_{17}Te_4$, $Pd_9Te_4$, PdTe, $PdTe_2$, $Sb_2Te_3$, and Sb and continuous PdSb-PdTe and $PdTe-PdTe_2$ solid solutions are stable. All the solid phases exhibit solid solution, mainly by substitution between Sb and Te to an extent that varies with temperature of formation. The maximum substitution (at.%) of Te for Sb in the Pd-Sb phases is: 44.3 in $Pd_8Sb_3$, 52.0 in $Pd_{31}Sb_{12}$, 46.2 in $Pd_5Sb_2$ at $800^{\circ}C$; 15.3 in $Pd_5Sb_3$, 68.3 in $PdSb_2$ at $600^{\circ}C$. The maximum substitution (at.%) of Sb for Te in the Pd-Te phases is 34.5 in $Pd_5Sb_3$ at $800^{\circ}C$, and 41.6 in $Pd_7Te_3$, 5.2 in $Pd_{17}T_4$, 12.4 in $Pd_9Te_4$, and 19.1 in $PdTe_2$ at $600^{\circ}C$. Physical properties and X-ray data of the synthetic $Pd_9Te_4$, PdTe, $PdTe_2$, $Pd_8Sb_3$, PdSb, and $Sb_2Te_3$ correspond very well with those of telluropalladinite, kotulskite, merenskyite, mertieite II, sudburyite, and tellurantimony, respectively. Because X-ray powder diffraction data consistently reveal a 310 peak ($2.035{\AA}$), the $PdSb_2$ phase is most probably of cubic structure with space group $P2_13$. The X-ray powder pattern of a phase with PdSbTe composition, synthesized at $600^{\circ}C$, compares well with that of testibipalladite. Therefore, testibiopalladite may be a member of the $PdSb_2-Pd(Sb_{0.32}Te_{0.68})$ solid solution series which is cubic and $P2_13$ in symmetry. Thus the ideal fonnula for testibiopalladite, presently PdSbTe, must be revised to PdTe(Sb, Te). Borovskite($pd_3SbTe_4$) has not been found in the synthetic system in the temperature range $1000^{\circ}-600^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.3 no.6
• /
• pp.678-683
• /
• 1993

Atomic arral1gement of ordered phase in $GaAs_{0.5}Sb_{0.5}$ epilayer was studied by observation of selected area diffraction patterns and high resolution images. The epilayer was grown on untilted (001) GaAs substrate at $580^{\circ}C$ by molecular beam epitaxy(MBE). A 1/2(111) type long-range ordered phase is formed in the epilayer. Atomic arrangement of the ordered phase is described as an alternative stacking of As-rich and Sb-rich {111} planes in group V sublattice. Space group of the ordred structure belongs to R3m, and unit cell of the ordered structure is rhombohedral.

• Tunnel and Underground Space
• /
• v.14 no.2
• /
• pp.121-132
• /
• 2004

Dynamic fracture processes of rock were analyzed to investigate the influence of the initiation error of the delay detonator in smooth blasting. The analysis models for the smooth blasting considered two blast geometries with three charge holes, and the simultaneous initiations without initiation error, with the initiation error of electronic delay detonator and with the initiation error of pyrotechnically delay detonator(DS detonator) were applied to the charge holes. In order to examine the effect of electronic and DS initiation detonator on the smooth blasting, the fracture process results were analyzed statistically.

• Journal of Korean Association for Spatial Structures
• /
• v.19 no.4
• /
• pp.45-52
• /
• 2019

The purpose of the paper is to introduce a system that reduces the occurrence of weak-story in the event of earthquake. Weak-story concentrates deformation on the story and causes all member to collapse before the capacity of all member is reached. This paper introduces Strong-Back system (SB) to protect weak story. SB is a hybrid of zipper frame, tied eccentrically braced frame, and elastic truss system and it is divided into elastic and inelastic areas. Elastic areas prevent the generation of weak story by distributing energy, and inelastic areas dissipate energy through buckling or yielding. In this paper, the seismic performance is evaluated by comparing the four type braced frame with SB through push-over analysis. The four criteria are compared from the base shear, the ductility capacity, the column failure order, and the quantity of brace. As a result, SB proved to have sufficient performance to protect the weak-story.

• Tunnel and Underground Space
• /
• v.21 no.3
• /
• pp.235-243
• /
• 2011

In this study, a control blast method, which utilizes crack guide holes, is suggested to achieve smooth fracture plane and minimize blast damage zone (BDZ) in smooth blasting. In order to verify the effectiveness of crack guide holes on the fracture plane control in blasting, fracture process analyses which consider regular smooth blasting and guide hole smooth blasting had been conducted and the fracture planes resulting from the analyses had been compared. The analyses models considered the ignition of the blast holes using detonation cords and each guide hole placed between blast holes. From the results, the smooth blasting utilizing guide holes showed lower fracture plane roughness than regular smooth blasting method in the hole spacing range between 20 to 40cm.

• Tunnel and Underground Space
• /
• v.19 no.4
• /
• pp.366-372
• /
• 2009

Recently, in order to achieve smooth fracture plane and minimize the excavation damage zone in rock blasting, controlled blasting methods which utilize new technologies such as electronic delay detonator (EDD) and a notched charge hole have been suggested. In this study, smooth blastings utilizing three wing type notched charge holes are simulated to investigate the influence of explosive initial density on the resultant fracture plane and damage zone using dynamic fracture process analysis (DFPA) code. Finally, based on the dynamic fracture process analyses, novel smooth blasting method, ED-Notch SB (Electronic Detonator Notched Charge Hole Smooth Blasting) is suggested.

• Journal of the Mineralogical Society of Korea
• /
• v.18 no.3 s.45
• /
• pp.147-153
• /
• 2005

Naldrettite, recently discovered in the Mesamax Northwest deposit, Ungava region, northern Quebec, Canada, was reported as a new mineral. In order to confirm whether itis a natural equivalent of synthetic $Pd_2Sb$ phase or not, the pure $Pd_2Sb$ phase has been synthesized and investigated by reflected microscope, electron microprobe analyser, X-ray diffractometer, and micro-indentation hardness tester. Under reflected light synthetic $Pd_2Sb$ Phase is white with a creamy tint in both air and oil and weakly bireflectant. Anisotropism is strong, from brownish gray to greenish blue in air. Micro-indentation hardness test gives VHN100=293(242-322). Composition of the phase is $63.7\~64.3wt.\%\;Pd\;and\; 36.4\~36.8wt.\%$ Sb, and is entirely consistent. The phase, quenched from $500^{\circ}C$, is orthorhobic with space group $Cmc2_1$, and the cell parameters are a=3.366(1), b=17.523(3), c=6.929(2) ${\AA}$. All mineralogical properties of synthetic $Pd_2Sb$ compare very well with those of naldrettite, confirming that naldrettite is the natural analogue of the synthetic $Pd_2Sb$ phase.

• Journal of the Korea institute for structural maintenance and inspection
• /
• v.25 no.1
• /
• pp.93-102
• /
• 2021

This paper describes the process of developing a concrete median barrier of SB4 grade with anti-glare function. The development section has a height and width of 1,270mm and 560mm, respectively. A wire mesh is placed in the center of the cross section to improve the protection performance. Collision analysis predicted that this section satisfies the strength and occupant protection performance, and that no damage to the barrier occurs. In the actual collision test, it was confirmed that this section satisfies the strength and occupant protection performance. However, damage was observed on two concrete barrier when the truck crashed. In order to improve the accuracy of the collision analysis of the concrete barrier in the future, it is considered that a study on the model development and continuous collision analysis method for domestic commercial vehicles should be carried out.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.24.2-24.2
• /
• 2009

Indium Antimonide(InSb)는 $3{\sim}5\;{\mu}m$대 적외선 감지영역에서 기존 HgCdTe(MCT)를 대체할 물질로 각광받고 있다. 1970년대부터군사적 용도로 미국, 이스라엘 등 일부 선진국에서 연구되기 시작했으며,이온주입, MOCVD, MBE 등 다양한 공정을 통해 제작되어 왔다. InSb 적외선 감지소자는 $3{\sim}5{\mu}m$대에서 HgCdTe와 성능은 대등한데 반해, 기판의 대면적화와 저렴한 가격, 우주공간 및 야전에서 소자 동작의안정성 등으로 InSb적외선 감지기는 냉각형 고성능 적외선 감지영역에서 HgCdTe를 대체해 가고 있다. 하지만 InSb는 77 K에서 0.225eV의 작은 밴드갭을 갖고 있기 때문에 누설전류로 인한 성능저하가 고질적인문제로 대두되었고, 이를 해결하기 위한 고품질 절연막 연구가 InSb적외선 수광 소자 연구의 주요이슈 중 하나가 되어왔다. 그 동안 PECVD, photo-CVD, anodic oxidation 등의 공정을 이용하여 $SiO_2$, $Si_3N_4$, 양극산화막(anodic oxide) 등 다양한 절연막에 대한 연구가 진행되었고[1,2], 절연막과 반도체 사이 계면에서의 열확산을 억제하여 계면트랩밀도를 최소화하기 위한 공정개발이 이루어졌다[3]. 하지만 InSb 적외선 감지기술은 국방 및 우주개발의 핵심기술중 하나로 그 기술의 이전이 엄격히 통제되고 있으며, 현재도 미국과 이스라엘, 일본, 영국 등 일부 선진국 만이 기술을 확보하고 있고, 국내의 경우 연구가 매우 취약한 실정이다. 따라서 본 연구에서는 InSb 적외선 감지기의 암전류를 제어하기 위한 낮은 계면트랩밀도를 갖는 절연막 증착 공정을 찾고자 하였다. 본 연구에서는 n형 (100) InSb 기판 ($n=0.2{\sim}0.85{\times}10^{15}cm^{-3}$ @ 77K)에 PECVD를 이용하여 $SiO_2$, $Si_3N_4$ 등을 증착하고 절연막으로서 이들의 특성을 비교 분석하였다. $SiO_2$는 160, 200, $240^{\circ}C$에서 $Si_3N_4$는 200, $300^{\circ}C$에서 증착하였다. Atomic Force Microscopy(AFM) 사진으로 확인한 결과, 모든 샘플에서표면거칠기가 ~2 nm의 평탄한 박막을 얻을 수 있었다. Capacitance-Voltage 측정(77K)을 통해 절연막 특성을 평가하였다. $SiO_2$와 $Si_3N_4$ 모두에서 온도가 증가할수록 벌크트랩밀도가 감소하는 경향을 볼 수 있었는데, 이는 고온에서 증착할 수록 박막 내의 결함이 감소했음을 의미한다. 반면계면트랩밀도는 온도가 증가함에 따라, 1011 eV-1cm-2 대에서 $10^{12}eV^{-1}cm^{-2}$ 대로 증가하였는데, 이는 고온에서 증착할 수 록 InSb 표면에서의 결함은 증가하였음을의미한다. 암전류에 큰 영향을 주는 것은 계면트랩밀도 이므로, $SiO_2$와 $Si_3N_4$ 모두 $200^{\circ}C$이하의 저온에서 증착시켜야 함을 확인할 수 있었다.