• Title/Summary/Keyword: SAMs

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A Study of Approximation Method of Spatial Objects (공간 객체의 근사화 방법 연구)

  • Kim, Yong-Hyeon;Lee, Hyeong-Su;Lee, Seong-Su;Kim, Eung-Mo
    • The Transactions of the Korea Information Processing Society
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    • v.3 no.7
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    • pp.1753-1762
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    • 1996
  • Since the number of spatial objects go easily into millions, they are stored on a secondary storage. In order to speed up accessing the geometric objects, we investigate spatial database system. The spatial objects are organized and accessed by spatial access methods(SAMs). But, SAMs are not able to organize polygons directly The most popular approach for handing polygon in SAMs is to use MBR apporximaotion as a geometric key. MBR provides a fast but inaccurate answers to approximation-based query processing. The performance of approximation-based spatial query processing depends on which type of approximation is chosen for the spatial objects. A suitable approximation is crucial for reducing the size of the candidate set. The better the approxmation quality, the fewer accesses to the exact object are necessary. In this paper, I proposed a new multicontainer approximation named Slice decomposition. The performance of proposed method is compared with other method.

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Nano/Micro-scale friction properties of Silicon and Silicon coated with Chemical Vapor Deposited (CVD) Self-assembled monolayers

  • Yoon, Eui-Sung;R.Arvind Singh;Oh, Hyun-Jin;Han, Hung-Gu;Kong, Ho-Sung
    • KSTLE International Journal
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    • v.5 no.2
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    • pp.37-43
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    • 2004
  • Abstract : Nano/micro-scale friction properties were investigated on Si (100) and three self-assembled monolayers (SAMs) (PFOTC, DMDM, DPDM) coated on Si-wafer by chemical vapor deposition technique. Experiments were conducted at ambient temperature(24$pm$1$circ$C) and humidity(45$pm$5%). Friction at nano-scale was measured using Atomic Force Microscopy (AFM) in the range of 0-40nN normal loads. In both Si-wafer and SAMs, friction increased linearly as a function of applied normal load. Results showed that friction was affected by the inherent adhesion in Ssi-wafer, and in the case of SAMs the physical/chemical structures had a major influence. Coefficient of friction of these test samples at the micro-scale was also energies. In order to study the effect of contact area on coefficient of friction at the micro-scale, friction was measured for Si-wafer and DPDM against Soda Lime balls (Duke Scientiffic Corporation) of different radii (0.25 mm, 0.5 mm and 1 mm) at different applied normal loads (1500, 3000 and 4800 mN). Results showed that Si-wafer had higher coefficient of friction than DPDM. Further, unlike that in the case of DPDM, friction in Si-wafer was severely influenced by its wear. SEM evidences showed that solid-solid adhesion was the wear mechanism in Si-wafer.

Fabrication of Micro Patterned Fibronectin for Studying Adhesion and Alignment Behavior of Human Dermal Fibroblasts

  • Lee, Seung-Jae;Son, Young-Sook;Kim, Chun-Ho;Choi, Man-Soo
    • Macromolecular Research
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    • v.15 no.4
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    • pp.348-356
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    • 2007
  • The aim of this study was to fabricate a submicro-and micro-patterned fibronectin coated wafer for a cell culture, which allows the positions and dimensions of the attached cells to be controlled. A replica molding was made into silicon via a photomask in quartz, using E-beam lithography, and then fabricated a polydimethylsiloxane stamp using the designed silicon mold. Hexadecanethiol $[HS(CH_2){_{15}}CH_3]$, adsorbed on the raised plateau of the surface of polydimethylsiloxane stamp, was contact-printed to form self-assembled monolayers (SAMs) of hexadecanethiolate on the surface of an Au-coated glass wafer. In order to form another SAM for control of the surface wafer properties, a hydrophilic hexa (ethylene glycol) terminated alkanethiol $[HS(CH_2){_{11}}(OCH_2CH_2){_6}OH]$ was also synthesized. The structural changes were confirmed using UV and $^1H-NMR$ spectroscopies. A SAM terminated in the hexa(ethylene glycol) groups was subsequently formed on the bare gold remaining on the surface of the Aucoated glass wafer. In order to aid the attachment of cells, fibronectin was adsorbed onto the resulting wafer, with the pattern formed on the gold-coated wafer confirmed using immunofluorescence staining against fibronectin. Fibronectin was adsorbed only onto the SAMs terminated in the methyl groups of the substrate. The hexa (ethylene glycol)-terminated regions resisted the adsorption of protein. Human dermal fibroblasts (P=4), obtained from newborn foreskin, only attached to the fibronectin-coated, methyl-terminated hydrophobic regions of the patterned SAMs. N-HDFs were more actively adhered, and spread in a pattern spacing below $14{\mu}m$, rather than above $17{\mu}m$, could easily migrate on the substrate containing spacing of $10{\mu}m$ or less between the strip lines.

Fabrication of Graphene p-n Junction Field Effect Transistors on Patterned Self-Assembled Monolayers/Substrate

  • Cho, Jumi;Jung, Daesung;Kim, Yooseok;Song, Wooseok;Adhikari, Prashanta Dhoj;An, Ki-Seok;Park, Chong-Yun
    • Applied Science and Convergence Technology
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    • v.24 no.3
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    • pp.53-59
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    • 2015
  • The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

A Study on Tribological Characteristics of Materials for MEMS/NEMS Using Chemically Modified AFM tip (AFM을 이용한 MEMS/NEMS 공정용 재료의 트라이볼로지 특성에 관한 연구)

  • Heo, Jung-Chul;Kim, Kwang-Seop;Kim, Kyung-Woong
    • Tribology and Lubricants
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    • v.24 no.2
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    • pp.63-71
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    • 2008
  • Friction and adhesion tests were conducted to investigate tribological characteristics of materials for MEMS/NEMS using atomic force microscope (AFM). AFM Si tips were chemically modified with a self-assembled monolayer (SAM) derived from trichlorosilane like octadecyltrichlorosilane (OTS) and (1H, 1H, 2H, 2H-perfluorooctyl) trichlorosilane (FOTS), and various materials, such as Si, Al, Au, Cu, Ti and PMMA films, were prepared for the tests. SAMs were coated on Si wafer by dipping method prior to AFM tip to determine a proper dipping time. The proper dipping time was determined from the measurements of contact angle, surface energy and thickness of the SAMs. AFM tips were then coated with SAMs by using the same coating condition. Friction and adhesion forces between the AFM Si tip modified with SAM and MEMS/NEMS materials were measured. These forces were compared to those when AFM tip was uncoated. According to the results, after coating OTS and FOTS, the friction and adhesion forces on all materials used in the tests decreased; however, the effect of SAM on the reduction of friction and adhesion forces could be changed according to counterpart materials. OTS was the most effective to reduce the friction and adhesion forces when counterpart material was Cu film. In case of FOTS, friction and adhesion forces decreased the most effectively on Au films.

The Relationship between Students' Science Anxiety and Achivement (학생들의 과학교과 불안도와 학습성취도와의 관계)

  • Kim, Beom-Ki
    • Journal of The Korean Association For Science Education
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    • v.13 no.3
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    • pp.341-358
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    • 1993
  • In this study, the researcher analyzed relationship between stuents' science anxiety and achivement, and investigated the tendency of the science anxiety by students' variables. For the survey of this study. 5,304 stuents were sampled from the population of Korean secondary school. The researcher adopted R&D procedure for the development of SAMS(science anxiety measurement scale) and the SAT(science achivement test). The instrument SAMS consisted of 38-item scale. Cronbach a for SAMS was 0.92, concurrent validity was 0.66. SAT consist of 2O-item, the reliable coefficent of KR-20 was 0.70. The data were analyzed by using Pearson-Product coefficient and Regression analysis for the correlation between dependent and independent variable. The tendency of science anxiety were analyzed Multi-way analysis of variance, and all hypotheses were evaluated as the significant level of 0.001. Results of this study were summarized as follows : 1) The relationship between the science anxiety and the achivement showed negative correlation(r=-O.24) in all grades. 2) The relationship between the male and the female showed negative correlation (male;r=-Q.23. female=-O.22), but 11ths' humanities course and female of the science course didn't showed correlation. 3) The size of city where the school located showed negative correlation to the students anxiety(big city;-O27. medium;-O.24, small city;-O.22). 4) Tendency of students' science anxiety according to the variable of grades and sex variables was found to significant difference. The effects of interaction were found to significant difference between two variables of grade and sex. sex and local, local and grade. The effects among three variables were formed to significant difference grade, sex and local.

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Effect of length of alkyl chain consisting of fluorine and carbon in self-assembled monolayers

  • Park, Sang-Geon;Lee, Won Jae;Lee, Won Jae;Kim, Tae Wan
    • Journal of Ceramic Processing Research
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    • v.19 no.5
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    • pp.361-368
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    • 2018
  • We investigated the interfacial properties of fluorocarbon self-assembled monolayers (FC-SAMs) with different alkyl chain lengths. It was found that the substrate characteristics were changed rapidly with the fabrication time and temperature of the SAM. FC-3SAM, which has the shortest alkyl chain in this study, showed a contact angle of $54.1^{\circ}$ when it was fabricated in an electric oven at $60^{\circ}C$ for the first minute. The FC-3SAM showed a contact angle of up to $76.9^{\circ}$ when it was fabricated in an electric oven at the same temperature condition for 180 minutes. FC-10SAM, which has the longest alkyl chain in this study, showed a contact angle of $64.7^{\circ}$ when it was fabricated at a temperature condition of $60^{\circ}C$ for 1 minute, and a contact angle of $98.7^{\circ}C$ at a temperature condition of $60^{\circ}C$ for 180 minutes. It was found that the FC-10SAM shows an increased contact angle and hydrophobic properties due to a well-aligned molecular structure resulting from a strong van der Waals force. In contrast, the FC-3SAM shows a small contact angle due to the intermolecular disorder resulting from a weak van der Waals force. The average roughness of FC-SAMs was investigated using AFM. The surface roughness of FC-SAMs, which verifies the results of contact angle, was confirmed. At a fabrication time of 120 minutes, the FC-10SAM showed an improvement in average roughness by 62% compared to that of FC-3SAM due to its good alignment.

Controlling the Work Functions of Graphene by Functionalizing the Surface of $SiO_2$ Substrates with Self-assembled Monolayers

  • Jo, Ju-Mi;Kim, Yu-Seok;Cha, Myeong-Jun;Lee, Su-Il;Jeong, Sang-Hui;Song, U-Seok;Kim, Seong-Hwan;Jeon, Seung-Han;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.400-401
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    • 2012
  • 그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 전계 효과 트랜지스터(Field effect transistor; FET), 유기 전자 소자(Organic electronic device)와 광전자 소자(Optoelectronic device) 같은 반도체 소자에 응용 가능하다. 그러나 에너지 밴드 갭이 없기 때문에 소자의 전기적 특성이 제한되는 단점이 있다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization) 등의 방법으로 그래핀을 도핑 후 에너지 밴드 갭을 형성시키는 연구 결과들이 보고된 바 있다. 그러나 이러한 방법들은 표면이 균일하지 않고, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가조립 단층막(Self-assembled monolayers; SAMs)을 이용하여 이산화규소(Silicon oxide; SiO2) 기판을 기능화한 후 그 위에 그래핀을 전사하면 그래핀의 일함수를 쉽게 조절하여 소자의 전기적 특성을 최적화할 수 있다. SAMs는 그래핀과 SiO2 사이에 부착된 매우 얇고 안정적인 층으로 사용된 물질의 특성에 따라 운반자 농도나 도핑 유형, 디락 점(Dirac point)으로부터의 페르미 에너지 준위(Fermi energy level)를 조절할 수 있다[1-3]. 본 연구에서는 SAMs한 기판을 이용하여 그래핀의 도핑 효과를 확인하였다. CVD를 이용하여 균일한 그래핀을 합성하였고, 기판을 3-Aminopropyltriethoxysilane (APTES)와 Borane-Ammonia(Borazane)을 이용하여 각각 아민 기(Amine group; -NH2)와 보론 나이트라이드(Boron Nitride; BN)로 기능화한 후, 그 위에 합성한 그래핀을 전사하였다. 기판 위에 NH2와 BN이 SAMs 형태로 존재하는 것을 접촉각 측정(Contact angle measurement)을 통해 확인하였고, 그 결과 NH2와 BN에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)을 이용하여 확인하였다. 본 연구 결과는 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

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