• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.272-277
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• 2001

A spin valve structure of Ta/NiFe/CoFe/Cu/CoFe/Ru/CoFe/FeMn/Ta which has a synthetic antiferromagnet (CoFe/Ru/CoFe), was fabricated by using a magnetron sputtering system. The thickness and composition of magnetic free and pinned layers affect the magnetic properties such as exchange interaction strength of each layer and so on. Even though Rutherford Backscattering Spectrometry (RBS) has advantages of quantitative and non-destructive analysis, it is almost impossible to determine the thickness and composition of magnetic thin films using lBS because of its poor mass resolution for a higher atom number (Z>20). In this study, quantitative analysis of the element composition and thickness for the spin valve sample was performed by combining both Proton Induced X-ray Emission Spectrometry (PIXE), which is one of element specific analysis techniques, and grazing-exit RBS with a highly improved depth resolution and absolute quantitative analysis. For the quantitative analysis, standardization of PIXE was carried out with NiFe, CoFe, and FeMn layers, which are one of constituent layers of spin valve films. Through PIXE standardization and the aid of PHE experimental results of the spin valve sample, ire overlapped signal in a grazing-exit RBS spectrum were successfully resolved and the thickness of the Ru layer was determined with a resolution of ∼1 .

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.203-209
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.

• Journal of Magnetics
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• v.18 no.2
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• pp.155-158
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• 2013

FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and back-scattered particles which have a high in-plane magnetic anisotropy field $H_k$ above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and $H_k$ of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high $H_k$ of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.191-191
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• 2007

유효 산화막 두께가 약 2.0nm 정도의 $ZrO_2$ 절연막 위에 Ta-Mo 금속 합금과 Ru-Zr 금속 합금을 Co-sputtering 방법을 이용하여 여러 가지 일함수를 갖는 MOS capacitor를 제작하여 전기적 재료적 특성에 관하여 연구를 하였다. 그 결과 각각의 금속 합금 게이트는 4.1eV 에서 5.1eV 사이의 다양한 일함수를 나타냈으며, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$ RTA 후의 C-V특성 곡선 및 I-V 측정을 통하여 누설전류를 확인하였다. 그 결과 Ta-Mo 금속 합금의 경우 스퍼터링 파워가 100W/70W에서 NMOS에 적합한 일함수를 가졌으며, Ru-Zr 금속 합금의 경우 스퍼터링 파워가 50W/100W에서 NMOS에 적합한 일함수를 가졌다. 열처리 후의 C-V특성 곡선에서도 정전용랑 값이 거의 변하지 않았으며 평탄 전압의 변화도 거의 없었다. 누설전류 특성에서는 물리적 두께가 비슷한 기존의 $SiO_2$ 절연막에서 실험결과와 비교하여 약 100배 정도 감소되었음을 알 수 있었다. 또한 기존의 실험들에서 나타난 열처리 후의 $ZrO_2$ 절연막과 Si 기판 사이의 Interfacial layer 의 동반 두께 증가로 인한 전기적 특성 저하가 나타나지 않는 줄은 특성을 보여준다.