• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.393-393
• /
• 2012

Optically active nanostructures such as subwavelength moth-eye antireflective structures or surface enhanced Raman spectroscopy (SERS) active structures have been demonstrated to provide the effective suppression of unwanted reflections as in subwavelength structure (SWS) or effective enhancement of selective signals as in SERS. While various nanopatterning techniques such as photolithography, electron-beam lithography, wafer level nanoimprinting lithography, and interference lithography can be employed to fabricate these nanostructures, roll-to-roll (R2R) nanoimprinting is gaining interests due to its low cost, continuous, and scalable process. R2R nanoimprinting requires a master to produce a stamp that can be wrapped around a quartz roller for repeated nanoimprinting process. Among many possibilities, two different types of mask can be employed to fabricate optically active nanostructures. One is self-assembled Au nanoparticles on Si substrate by depositing Au film with sputtering followed by annealing process. The other is monolayer silica particles dissolved in ethanol spread on the wafer by spin-coating method. The process is optimized by considering the density of Au and silica nano particles, depth and shape of the patterns. The depth of the pattern can be controlled with dry etch process using reactive ion etching (RIE) with the mixture of SF6 and CHF3. The resultant nanostructures are characterized for their reflectance using UV-Vis-NIR spectrophotometer (Agilent technology, Cary 5000) and for surface morphology using scanning electron microscope (SEM, JEOL JSM-7100F). Once optimized, these optically active nanostructures can be used to replicate with roll-to-roll process or soft lithography for various applications including displays, solar cells, and biosensors.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.124-125
• /
• 2012

Korea institute of materials science (KIMS) use a linear deposition source called as a closed drift linear plasma source (CDLPS) as well as dual magnetron sputtering (DMS) to deposit SiOxCyHz films in $HMDSO/O_2$ plasma. The CDLPS generates linear plasma using closed drifting electrons and can reduce device degradations due to energetic ion bombardments on organic devices such as organic photovoltaic and organic light emission diode by controlling an ion energy. The deposited films are investigated by Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Optical emission spectroscopy (OES) is used to measure relative radical populations of dissociation and recombination products such as H, CH, and CO in plasma. And SiOx film is applied to a barrier film on organic photovoltaic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.10
• /
• pp.923-929
• /
• 2008

On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1406-1408
• /
• 2006

Plastic substrate for flexible TFT LCD is developed. The gas barrier, optical properties and conductivity in the substrate is improved through depositing silicon oxide/nitride layer and ITO layer, coating polymer layer on plastic film by sputtering process and wet coating process. The whole production process of the plastic substrate is guaranteed the productivity by using roll to roll process.

• Journal of the Korean Society of Radiology
• /
• v.17 no.3
• /
• pp.441-447
• /
• 2023

Lead(Pb), which is currently mainly used for shielding purposes in the medical radiation, has excellent radiation shielding functions, but is continuously exposed to radiation directly or indirectly due to the harmfulness of lead itself to the human body and the inconvenience caused by its heavy weight. Research on shielding materials that are human-friendly, lightweight, and convenient to use that can block risks and replace lead is continuously being conducted. In this study, based on the commonly used polyethylene terephthalate (PET) film and the fabric material used in actual radiation protective clothing, a multi-layer thin film was realized through sputtering and vacuum deposition of bismuth, tungsten, and tin, which are metal materials that can shield radiation. Thus, a shielding film was produced and its applicability as a radiation shielding material was evaluated. The radiation shielding film was manufactured by establishing the optimized conditions for each shielding material while controlling the applied voltage, roll driving speed, and gas supply amount to manufacture the shielding film. The adhesion between the parent material and the shielding metal thin film was confirmed by Cross-cut 100/100, and the stability of the thin film was confirmed through a hot water test for 1 hour to measure the change of the thin film over time. The shielding performance of the finally realized shielding film was measured by the Korea association for radiation application (KARA), and the test conditions (inverse wide beam, tube voltage 50 kV, half layer 1.828 mmAl) were set to obtain an attenuation ratio of 16.4 (initial value 0.300 mGy/s, measured value 0.018 mGy/s) and damping ratio 4.31 (initial value 0.300 mGy/s, measured value 0.069 mGy/s) were obtained. by securing process efficiency for future commercialization, light and shielding films and fabrics were used to lay the foundation for the application of films to radiation protective clothing or construction materials with shielding functions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.582-582
• /
• 2013

Oxide TFT (thin film transistor) active channel layer에 대한 저온 열처리 공정은 투명하고 flexibility을 기반으로하는 display 산업과 AMOLED (active matrix organic light emitting diode) 분야 등 다양한 분야에서 필요로 하는 기술로서 많은 연구가 이루어지고 있다. 과거 active layer는 ALD (atomic layer deposition), CVD (chemical vapor deposition), pulse laser deposition, radio frequency-dc (RF-dc) magnetron sputtering 등과 같은 고가의 진공 장비를 이용하여 증착 되어져 왔으나 현재에는 진공 장비 없이 spin-coating 후 열처리 하는 저가의 공정이 주로 연구되어 지고 있다. Flexible 기판들은 일반적인 OTFT (oxide thin films Transistor)에 적용되는 열처리 온도로 공정 진행시 열에 의한 기판의 손상이 발생한다. Flexible substrate의 열에 의한 기판 손상을 막기 위해 저온 열처리 공정이 연구되고 있지만 기존 열처리와 비교하여 소자의 특성 저하가 동반 되었다. 본 연구에서는 Si 기판위에 SiO2 (100)를 절연층으로 증착하고 그 위에 IZO (indium zinc oxide) solution을 spin-coating 한뒤 $250^{\circ}C$ 이하의 온도에서 열처리하였다. 저온 공정으로 인하여 소자의 특성 저하가 동반 되었으므로 소자의 저하된 특성 복원하고자 post-treatment로 고가의 진공장비가 필요 없고 roll-to roll system 적용이 수월한 remote-type의 APP (atmospheric pressure plasma) 처리를 하였다. Post-treatment로 APP를 이용하여 $250^{\circ}C$ 이하에서 소자에 적용 가능한 on/off ratio를 얻을 수 있었다.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1576-1578
• /
• 1996

MgO protection layer in ac PDP prevents the dielectric layer from sputtering of ion in discharge plasma in addition to the contribution to the memory function and also have the additional important roll in lowering the firing Voltage due to a large secondary electron emission yield(${\gamma}$). The methode of Sputtering are easy to apply on mass production and to enlarge the size of the panel and are known to have the superior Adhesion and Uniformity of thin film. MgO protection layer of $1000{\AA}$ on dielectric layer by Reactive R.F magnetron sputtering is formed. Discharge characteristics have done with the formation of protection layer.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.18 no.2
• /
• pp.95-101
• /
• 2017

In this paper, the sizing removal condition for the pretreatment of composite materials is obtained numerically by applying an image processing algorithm and nickel-plated carbon fiber is fabricated by a dry process method to enhance its electromagnetic shielding performance. Sizings that are wrapped in a polymer type material during the manufacturing of carbon fiber should be removed for dry coating. A numerical value, that is the correlation, can be obtained by determining the regular pattern of the carbon fiber in the image taken by a scanning electron microscope (SEM) after the sizing is removed. The application of the proposed numerical method to the SEM image of the fiber after the sizing is removed with solution, compressed air, solution and compressed air (hybrid), showed that this method of eliminating the sizing is superior to the hybrid method. Then, by spreading the carbon fiber roll with the sizing removed, we were able to produce nickel plated carbon fiber by the roll-to-roll sputtering method. The electromagnetic shielding performance of the fabricated 30, 40 and 100 nickel coated carbon fibers was measured. The Korea Advanced Institute of Science and Technology evaluated the electromagnetic shielding performance of the 100 nickel-coated carbon fiber to have a maximum value of 73.2 (dB) and a minimum value of 66.7 (dB). This is similar to the electromagnetic shielding rate of copper and shows that this material can be used as a cable for EV / HEV automobiles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.05a
• /
• pp.59-62
• /
• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.146-146
• /
• 2009

최근에 광도전체와 형광체를 기반으로 평판형 디지털 방사선 검출기의 상업적 발전가능성에 많은 관심을 가지고 있다. 본 연구는 기존의 직접변환방식에 널리 사용되었던 비정질 셀레늄 (amorphous selenium) 기반의 디지털 방사선 검출기보다 높은 전기적신호 및 동작특성을 가지는 물질층을 제작하기 위해 High Purity (99.99%)의 상용화된 $PbI_2$를 특수용매에 담가두었다가 약 1시간동안 Biology 초음파 처리한 후 농축기를 사용하여 건조된 $PbI_2$를 3Roll-milling을 사용하여 미세크기의 Powder를 얻어내었다. 합성된 $PbI_2$ Powder를 PIB(Particle-in-Binder)법을 이용하여 전도성을 가진 ITO(Indium-tin-oxide)코팅된 유리판에 제작된 필름의 상부에 Magnetron sputtering system 을 사용하여 전극을 $1cm{\times}1cm$의 크기로 증착하였다. I-V 테스트를 통하여 X선 조사시 $PbI_2$필름의 Sensitivity, Dark current, SNR(signal-to-noise ratio)을 측정하여 필름의 전기적 검출 특성을 정량적으로 평가하였고 SEM(scanning electron microscope)을 통하여 입자의 크기를 관찰하였다.