• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.9
• /
• pp.2015-2020
• /
• 2012

The subthreshold characteristics has been analyzed to investigate the effect of two gate in Double Gate MOSFET using impact factor based on scaling theory. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. The potential distribution was used to investigate the short channel effects such as threshold voltage roll-off, subthreshold swings and drain induced barrier lowering by varying impact factor for scaling factor. The impact factor of 0.1~1.0 for channel length and 1.0~2.0 for channel thickness are used to fit structural feature of DGMOSFET. The simulation result showed that the subthreshold swings are mostly effected by impact factor but are nearly constant for scaling factors. And threshold voltage roll-off and drain induced barrier lowering are also effected by both impact factor and scaling factor.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.1
• /
• pp.25-32
• /
• 2005

In this paper, it is attempted to provide a unified explanation for typical short channel GaAs MESFET’s and SOI-structured Si JFET's behaviors such as: i) drain voltage-induced threshold voltage roll-off, ii) finite output ac resistance beyond the saturation, and iii) weak dependence of the drain saturation current on the channel length. Replacing the conventional GCA with a new assumption that is suggested in order to include the longitudinal field variation, and taking into account the channel current continuity and the field-dependent mobility, we can derive the two-dimensional potential in both depletion region and undepleted conducting channel. Obtained expressions for the threshold voltage and the drain current will be considerably accurate over the entire operating region. Moreover, in comparison with the conventional channel length shortening models, our model seems to be more reasonable in explaining the Early effect.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.9
• /
• pp.21-30
• /
• 1999

Halo pocket implantation in MOSFETs, which is known to be an efficient method to provent the punchthrough and threshold voltage roll-off phenomena, decreases the drain current of MOSFET devices. Although the decrease of the drain current in halo structure MOSFET is usually explained in terms of the increase of the threshold voltage, more decrease in the drain current than is predicted by the increased threshold voltage has experimentally been observed. In this work, the effect of halo doping profile on the drain current degradation is investigated in terms of the field distribution along the channel. Effective mobility model of the halo MOSFETs due to pocket implantation is presented and the degradation of the mobility is shown to be effective in the further decrease of the drain current. Present model is shown to be in good agreement with experimental results.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.49 no.1
• /
• pp.8-14
• /
• 2012

The device performances of n-channel MuGFET with different fin numbers and fin widths but the total effective channel width is constant have been characterized. Two kinds of Pi-gate devices with fin number=16, fin width=55nm, and fin number=14, fin width=80nm have been used in characterization. The threshold voltage, effective electron mobility, threshold voltage roll-off, inverse subthreshold slope, PBTI, hot carrier degradation, and drain breakdown voltage have been characterized. From the measured results, the short channel effects have been reduced for narrow fin width and large fin numbers. PBTI degradation was more significant in devices with large fin number and narrow fin width but hot carrier degradation was similar for both devices. The drain breakdown voltage was higher for devices with narrow fin width and large fin numbers. With considering the short channel effects and device degradation, the devices with narrow fin width and large fin numbers are desirable in the device layout of MuGFETs.

• Journal of the Semiconductor & Display Technology
• /
• v.11 no.3
• /
• pp.33-37
• /
• 2012

Simple and high efficiency blue organic light-emitting diodes with three organic layers of N, N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-polya-minophenyl)cyclohexane[TAPC]/electron transport material [ET-137] were fabricated and their electroluminescent characteristics were evaluated according to the TAPC thickness variation in a range of $50{\sim}300{\AA}$. Electroluminescence spectra of the devices with structure of DNTPD/TAPC/ET-137 showed all the same central emission wavelengths of 455 nm under an applied voltage of 7V, which were similar with that of the device with ET-137 only. On the other hand, the electroluminescence spectra of the device with structure of DNTPD/ET-137 without TAPC layer showed double emission peaks at the wavelengths of 455 nm and 561 nm under an applied voltage of 7V. In the devices with structure of DNTPD/TAPC/ET-137, single peak blue emission was not maintained in the device with $50{\AA}$-thick TAPC above 8V by the formation of exciplex. In the device with $300{\AA}$-thick TAPC, however, single peak blue emission was maintained until 10 V. According to the thickness increase of TAPC in the fabricated devices, the current density and luminance decreased, but the luminous efficiency and roll-off characteristics were improved.

• Journal of IKEEE
• /
• v.23 no.4
• /
• pp.1150-1156
• /
• 2019

This paper explores a model-free value-based approach for solving survival gridworld problem. Survival gridworld problem opens up a challenge involving taking risks to gain better rewards. Classic value-based approach in model-free reinforcement learning assumes minimal risk decisions. The proposed method involves a hybrid on-policy and off-policy updates to experience roll-outs using a modified Q-based update equation that introduces a parametric linear rectifier and motivational discount. The significance of this approach is it allows model-free training of agents that take into account risk factors and motivated exploration to gain better path decisions. Experimentations suggest that the proposed method achieved better exploration and path selection resulting to higher episode scores than classic off-policy and on-policy Q-based updates.

• Journal of information and communication convergence engineering
• /
• v.9 no.6
• /
• pp.733-737
• /
• 2011

This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.

• Journal of Communications and Networks
• /
• v.12 no.6
• /
• pp.544-557
• /
• 2010

This paper addresses the problem of controlling the envelope's power peak of single carrier modulated signals, band limited by root-raised cosine (RRC) pulse shaping filters, in order to reduce power amplifier back-off for very small aperture terminals ground stations. Magnitude modulation (MM) is presented as a very efficient solution to the peak-to-average power ratio problem. This paper gives a detailed description of the MM concept and its recent evolutions. It starts by extending the look-up-table (LUT) based approach of the MM concept to M-ary constellations with M ${\leq}$ 16. The constellation and RRC symmetries are explored, allowing considerable reduction on LUT computation complexity and storage requirements. An effective multistage polyphase (MPMM) approach for the MM concept is then proposed. As opposed to traditional LUT-MM solutions, MM coefficients are computed in real-time by a low complexity multirate filter system. The back-off from high-power amplifier saturation is almost eliminated (reduction is greater than 95%) with just a 2-stage MPMM system even for very demanding roll-off cases (e.g., ${\alpha}$ = 0,1). Also, the MPMM is independent of modulation in use, allowing its easy application to constellations with M > 16.

• Journal of the Korean Graphic Arts Communication Society
• /
• v.29 no.2
• /
• pp.45-58
• /
• 2011

Gravure off-set printing recently is used in electronics display market. This method has advantages of mass production and high printing speed. It is also fine pattern can be implemented. We have manufactured low-curable conductive Ag pastes for gravure off-set printing. When printing, the pastes be used different silver powder shape because of the printing characteristics. The pastes were prepared with silver powder by silver powder shape and size, epoxy resin, solvent and homogenized on a standard three-roll mill. And the pastes exhibited a shear-thinning flow at viscosity profile. Moreover the adhesive strength and resistivity of silver film had a good characteristics. With the manufactured paste in this study, touch panel had is manufactured and it had $4{\times}10-5{\Omega}.cm$.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2007.05a
• /
• pp.609-612
• /
• 2007

The HDD (hard disk drive) using Load/Unload (L/UL) technology includes the benefits which are increased areal density, reduced power consumption and improved shock resistance than those of contact-start-stop (CSS). Dynamic L/UL has been widely used in portable hard disk drive and will become the key technology for developing the small form factor hard disk drive. The main design objectives of the L/UL mechanisms are no slider-disk contact or no media damage even with contact during L/UL, and a smooth and short unloading process. In this paper, we focus on lift-off force, pitch static attitude (PSA), roll static attitude (RSA) and dimple point. The "lift-off" force, defined as the minimum air bearing force, is another very important indicator of unloading performance. A large amplitude of lift-off force increases the ramp force, the unloading time, the slider oscillation and contact-possibility. PSA and RSA are also very important parameters in L/UL system and stability of slider is mainly determined by PSA and RSA. Dimple point by PSA and RSA is also important indicator. Therefore we find the optimal dimple point of SFF HDD suspension for improving the unloading performance.