• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.10
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• pp.3322-3333
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• 1996

A numerical analysis has been conducted to investigate a modified floating-zone crystal growth process in which most of the melt surface is covered with a heated ring. The crystal rod is not only pulled downward but rotated around its axisymmetric line during crystal growth process in order to produce the flat interface of crystal growth and the single crystal growth of NaNO3 is considered in 6mm diameter. The present study is made from a full-equation-based analysis considering a pulling velocity in all of solid and liquid domains and both of solid-liquid interfaces are tracked simultaneously with a governing equation in each domain. Numerical results are mainly presented for the comparison of the surface shape of rotational crystal rod with that of no-rotational crystal rod and the effects of revolution speeds of the crystal rod. Results show that the rotation of crystal rod produces more its flat surface. In addition, the shape of crystal growth near the centerline is more concaved with the increase in the revolution speed of crystal rod. The flow pattern and temperature distribution is analyzed and presented in each case. As the pulling velocity of crystal rod is increasing, the free surface of the melt below the heated ring is enlarged due to the crystal interface migrating downward.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.292-295
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• 2015

The effect of Ligand Binding energy in quantum rod (CdS/ZnS) plays a critical role in anisotropic growth. As mimicking large chain of ligands and using the head of the chain, I plan to bind the quantum rod and ligands so that it can grow well consequently. So the ultimate goal of this study is on how ligand binding can affect the growth of this quantum rod. There are preferred surfaces between the quantum rod and ligands, and we empirically know that ligands which bind the quantum rod; Phosphoric oxide (PO), Phosphoric acid(PA), Carboxylic acid(CA), Trimethylamine(TMA), have strong tendency to be attached on the surfaces of CdS/ZnS; ($11{\bar{2}}0$), ($10{\bar{1}}0$), ($000{\bar{1}}$), (0001). I virtually bond the surface and the ligands, and calculated the ligand binding energy after optimizing their structure, utilizing EDISON simulator. After all, I figured out how they are linked each other and how the quantum rod grows.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.914-917
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• 2002

Fabrication of micro carbon structures and patterns using laser-assisted chemical vapor deposition is studied. Argon ion laser and ethylene were used to grow micro carbon rod through pyrolytic decomposition of the reaction gas. The influence of reaction gas pressure and incident laser power on the diameter and growth rate of the micro carbon rod was experimentally investigated. The diameter of micro carbon rods increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below 1W. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 28 ${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.7
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• pp.106-115
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• 2002

Growth characteristics of micro carbon structures fabricated by laser-assisted chemical vapor deposition are studied. Argon ion laser and ethylene were used as the energy source and reaction gas, respectively, to grow micro carbon rod through pyrolytic decomposition of the reaction gas. Experiments were performed at various conditions to investigate the influence of process parameters on growth characteristics such as the diameter or growth rate of the micro carbon rod with respect to reaction gas pressure and incident laser power. Reaction gas pressure in experiments ranges from 200 to 600Torr and the incident laser power from 0.3 to 3.8W. For these conditions, the diameter of the rod increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below IW. For a constant reaction gas pressure, the growth rate increase with Increasing laser power, but the rate of increase decreases gradually, implying that the chemical vapor deposition condition changes from a kinetically-limited regime to a mass-transport-limited regime. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 287${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated..

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.190-198
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• 1994

Using home made EFG apparatus, ${\alpha}-Al_2O_3$ rod shaped single crystal growth by EFG process and analysis of grown single crystal defects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.250-260
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• 1995

In general, a sintered rod is used as a feed in the growth of crystals by the floating zone(FZ) method. The sintering condition of the feed rod affected the stability of molten zone because it influenced the interface shape between the feed and the melt during the crystal growth. In this study, rutile and ruby crystals were chosen as samples to analyze the effect of the microstructures of the feed rods. In sintering of the feed rod for the growth of rutile and ruby single crystals, the difference of grain size between the inner and the outer region of the feed rod increased with the sintering temperature and dwelling time. As a result, it altered melting behavior of the feed. The uniform grain size of the sintered rod was necessary for the optimum growing condition of crystals. The effect of pores in the feed rod was not a dominant factor to grow crystals by the FZ method, which was confirmed by growing crystals with nonsinterd rods as feeds.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.273-277
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• 2007

Vertically aligned Zinc Oxide rod arrays were grown by the self-assembly hydrothermal process on the GaN epitaxial layer which has a same lattice structure with ZnO. Zinc nitrate and DETA solutions are used in the hydrothermal process. The $(HfO_2)$ thin film was deposited on GaN and the patterning was made by the photolithography technique. The selective growth of ZnO rod was achieved with the patterned GaN substrate. The fabricated ZnO rods are single crystal, and have grown along hexagonal c-axis direction of (002) which is the same growth orientation of GaN epitaxial layer. The density and the size of ZnO rod can be controlled by the pattern. The optical property of ordered array of vertical ZnO rods will be discussed in the present work.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.3
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• pp.122-124
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• 2008

The partial phase diagram of $NaNO_3$-NaCl system was investigated and the eutectic temperature was determined as $294.5^{\circ}C$. A typical rod eutectics of $NaNO_3$-4.56 wt%NaCl was directionally solidified. The results of interrod spacing, ${\lambda}_E$ as a function of growth velocity, V, were. obtained as ${\lambda}_E\;V^{0.39}\;=\;5.26$ (temperature gradient, $G_l\;=\;21.4^{\circ}C/mm$) and ${\lambda}_E\;V^{0.32}\;=\;5.45$ ($G_l\;=\;3.9^{\circ}C/mm$) and the exponent numbers of growth velocity were smaller than the theoretical value, 1/2. The sample rotation applied during directional solidification made the interrod spacing decrease slightly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.459-460
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• 2008

Zinc oxide micro rods were fabricated using as chemical bath deposition ok photolithography. Vertically aligned Zinc Oxide rod array as grown by chemical bath deposition method on Zinc Oxide template layer. The ZnO template layer was deposited on glass and the pattering was made by standard photolithography technique. The selective growth of ZnO micro rods were achieved with the masked ZnO template layer substrate. The fabricated ZnO micro rods were found to be single crystalline and have grown along hexagonal c-axis direction of (0002) which is same as the preferred growth orientation of ZnO template layer. The ZnO micro-rod array structure was implemented as a window layer in Cu(InGa)Se2 solar cell and its effect on photovoltaic efficiency was examined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.243-243
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• 2007

We have studied the electrical properties and microstructure of $(Y_{0.5}Nd_{0.25}Sm_{0.25})Ba_2Cu_3O_y[(YNS)-123]$ Oxides by rod-type seeded melt growth process(RSMG) in air atmosphere. Rod-type $NdBa_2Cu_3O_y${Nd-123) seed crystals made a extrusion process method, were used for achieving the ab-plane alignment having large grains perpendicular to the center of (YNS)-123 samples. The observations using SEM and TEM micrographs of the melt-textured (YNS)-123 samples revealed that the nonsuperconducting $(Y_{0.5}Nd_{0.25}Sm_{0.25})Ba_2Cu_3O_y[(YNS)-211]$ inclusions are uniformly distributed in the superconducting matrix. The microstructure and electrical properties were investigated by XRD, SEM, TEM and DC SQUID magnetometer. The sample showed a sharp superconducting transition at 90 K. The magnetization values of the (YNS)-123 sample exhibited the enhanced electrical properties, compared with $YBa_2Cu_3O_y$(Y-123) sample.