• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.455-460
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• 2004

We have developed a mode-locked ultra-short pulse C $r^{4+}$:YAG laser, as well as a continuous wave C $r^{4+}$:YAG laser. The laser was pumped by a Nd:YAG laser and its characteristics were investigated. In continuous wave mode, we obtained as much as 600 mW at 1.436 ${\mu}{\textrm}{m}$ with pumping power of 6 W, by using an output coupler with a reflectivity of 98%. The power slope efficiency was 10%, when the gain medium was cooled to 19$^{\circ}C$. The tuning range was varied from 1.39 ${\mu}{\textrm}{m}$ to 1.55 ${\mu}{\textrm}{m}$ and the maximum power was 400 mW at 1.492 ${\mu}{\textrm}{m}$ with a 3-plate birefringent filter. The C $r^{4+}$:YAG laser was mode-locked by a Kerr lens mode locking method. Mode locking at 1.436 ${\mu}{\textrm}{m}$was initiated by slightly rocking a mirror mount. But the pulses were very unstable because of the strong water absorption at this region. So we shifted the lasing wavelength to 1.492 ${\mu}{\textrm}{m}$ by using a 3-plate birefringent filter. Then we obtained stable state mode-locking with the maximum average power of 280 mW for a pumping power of 6 W. The pulse width of 43 fs was measured using an autocorrelator and the repetition rate was 104.5 MHz.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.51-55
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• 2015

The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.