• Earthquakes and Structures
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• 제14권4호
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• pp.323-336
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• 2018

Machine foundations with impact loads are common powerful sources of industrial vibrations. These foundations are generally transferring vertical dynamic loads to the soil and generate ground vibrations which may harmfully affect the surrounding structures or buildings. Dynamic effects range from severe trouble of working conditions for some sensitive instruments or devices to visible structural damage. This work includes an experimental study on the behavior of dry dense sand under the action of a single impulsive load. The objective of this research is to predict the dry sand response under impact loads. Emphasis will be made on attenuation of waves induced by impact loads through the soil. The research also includes studying the effect of footing embedment, and footing area on the soil behavior and its dynamic response. Different falling masses from different heights were conducted using the falling weight deflectometer (FWD) to provide the single pulse energy. The responses of different soils were evaluated at different locations (vertically below the impact plate and horizontally away from it). These responses include; displacements, velocities, and accelerations that are developed due to the impact acting at top and different depths within the soil using the falling weight deflectometer (FWD) and accelerometers (ARH-500A Waterproof, and Low capacity Acceleration Transducer) that are embedded in the soil in addition to soil pressure gauges. It was concluded that increasing the footing embedment depth results in increase in the amplitude of the force-time history by about 10-30% due to increase in the degree of confinement. This is accompanied by a decrease in the displacement response of the soil by about 40-50% due to increase in the overburden pressure when the embedment depth increased which leads to increasing the stiffness of sandy soil. There is also increase in the natural frequency of the soil-foundation system by about 20-45%. For surface foundation, the foundation is free to oscillate in vertical, horizontal and rocking modes. But, when embedding a footing, the surrounding soil restricts oscillation due to confinement which leads to increasing the natural frequency. Moreover, the soil density increases with depth because of compaction, which makes the soil behave as a solid medium. Increasing the footing embedment depth results in an increase in the damping ratio by about 50-150% due to the increase of soil density as D/B increases, hence the soil tends to behave as a solid medium which activates both viscous and strain damping.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• 한국결정성장학회지
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• 제21권3호
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• pp.99-104
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• 2011

단결정 성장을 위한 $MgGa_2Se_4$ 다결정은 수평 전기로에서 합성하였으며, 결정구조는 rhombohedral이고 격자상수 $a_0$는 3.953 ${\AA}$, $c_0$는 38.890 ${\AA}$였다. $MgGa_2Se_4$ 단결정박막은 HWE(Hot Wall Epitaxy) 방법으로 반절연성 GaAs(100)기판에 성장시켰다. 단결정박막의 성장 조건은 증발원의 온도 $610^{\circ}C$, 기판의 온도 $400^{\circ}C$에서 진행되었으며 성장 속도는 0.5 ${\mu}m/h$였다. 단결정박막의 결정성은 이중 결정 x-선 회절곡선의 반폭치와 X-선 회절무늬의 ${\omega}-2{\theta}$로부터 구하여 최적 성장 조건을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $6.21{\times}10^{18}/cm^3$, 248 $cm^2/v{\cdot}s$였다. $MgGa_2Se_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수 스펙트럼을 10 K에서 293 K까지 측정하였다. 광흡수 스펙트럼으로부터 구한 에너지 갭 $E_g(T)$는 varshni 공식 $E_g(T)=E_g(0)=({\alpha}T^2/T+{\beta})$을 잘 만족함을 알 수 있었다. 여기서 $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$, ${\beta}=251\;K$였다.

• 한국결정성장학회지
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• 제25권2호
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• pp.51-55
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• 2015

본 연구에서는 PVT법으로 4H-SiC 단결정 성장 시 다공성 흑연판을 사용하여 Si/C 비율이나 온도구배, 물질전달의 향상시킴으로써 고품질의 SiC 단결정 기판 제작을 목적으로 연구를 진행하였다. 연구에 사용된 SiC 소스 물질은 흑연 도가니에 넣어 흑연 단열재로 쌓인 구조로 실험을 하였다. 성장온도는 $2100{\sim}2300^{\circ}C$, 그리고 성장압력은 10~30 Torr의 압력으로 아르곤과 질소 분위기에서 성장시켰다. 종자정은 2인치의 $4^{\circ}$ off-axis 4H-SiC의 C면 (000-1)을 사용하였고 다공성 흑연판은 SiC 소스 물질 위에 삽입하였다. 4H-SiC 결정다형 안정화를 위한 C-rich 조건이나 균일한 온도구배를 만들어주기 위해 다공성 흑연판을 삽입하여 실험을 진행하였다. 일반적인 도가니의 경우, 성장된 wafer에서 6H-, 15R-SiC와 같은 다양한 결정다형이 관찰된 반면에 다공성 흑연판을 삽입한 도가니에서는 4H-SiC만 관찰되었다. 또한 다공성 흑연판을 삽입한 도가니에서 성장된 결정에서 MP나 EP의 낮은 결함밀도를 보였으며 결정성 또한 향상된 것을 학인하였다.

• 한국임상수의학회지
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• 제20권3호
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• pp.286-293
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• 2003

Medetomidine (30 ug/kg IM) - tiletamine/zolazepam (10 mg/kg IV) 합제를 사용하여 마취한 잡종견(4.00$\pm$0.53kg) 12두에서 atipamezole의 심폐계 영향과 길항효과에 대하여 평가하였다. 4개의 실험군에 각각3두씩 임의로 배당하였다 (대조군: atipamezole 처치를 하지 않은 군, A30군: atipamezole 30 um/kg, A60: atipamezole 60 ug/kg, Al50: atipamezole 150 ug/kg). 모든 실험견은 medetomidine 투여 10분 전 atropine (0.03 mg/kg, IM)으로 전처치하였으며, medetomidine 투여 10분 후 tiletamine/zolazepam (TZ)를 투여하였다. TZ투여 15분 후 atipamezole을 정맥으로 투여하였다. 실험견이 머리를 들 때까지의 평균시간은 대조군 43.06$\pm$2.60분, A30군 43.06$\pm$2.60분, A60군 32.83$\pm$8.13분 Al50군 14.36$\pm$1.60분으로 대조군과 비교할 때 A150군에서 유의성 있게 감소하였으나 (P<0.05) 완전한 보행을 보일 때까지의 평균시간에는 유의성이 나타나지 않았다. 회복기에 보이는 두부의 진전, 과도한 유연, 근육 경련과 같은 부작용은 atipamezole치 용량이 증가할수록 심하게 나타났다. 12두의 실험견중 5두가 medetomidine투여 후 5분 이내에 구토를 하였다. 대조군에서 심박수는 TZ 투여 후 15분을 제외하고, 모든 측정시간대에서 유의성 있는 감소를 나타내었으며, 전 실험군에서 medetomidine 투여 10분 후. A30군에서 atipamezole투여 후 40분에 심박수의 유의성 있는 감소가 나타났다 (P<0.05). Al50군에서는 atipamezole투여 10분 후 심계 항진 및 호흡 항진이 나타났다. 대다수 실험견에서 동맥혈압은 medetomidine과 tiletamine/zolazepam 투여 후 유의성 있게 감소하였으나 (P< 0.05) A60군과 Al50군에서는 atipamezole투여 후 점차적으로 회복되었다. 혈액가스검사와 총 혈구계산치는 유의성 있는 변화가 관찰되지 않았다 본 실험의 결과로 atipamezole 150 mg/kg은 MTZ 병용 마취견 각성에 뛰어난 효과를 나타낸다고 사료된다.