• Journal of Magnetics
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• 제12권3호
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• pp.103-107
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• 2007

Magnetic field induced structural transition has been systematically investigated for $La_{1-x}Ba_xMnO_3$ with the fine control of carrier doping $(0.15{\leq}x{\leq}0.20)$. Application of a magnetic field results in the suppression of the rhombohedral-orthorhombic transition temperature $(T_s)$ and the increase of insulator-metal transition temperature $(T_{MI})$. Near x = 0.17, where $T_S$ is similar to $T_{MI}$ at zero magnetic field, we found that the $T_S$ smoothly decreased with magnetic field even though it intersected the $T_{MI}$ near 3 T. Also, the magnetostructural phase diagram obtained from the temperature sweep and from the magnetic field sweep is not significantly modified. By comparing the magnetostructural transition in $La_{1-x}Sr_xMnO_3$, we have suggested that the large disorder originated from ionic size differences between La and Ba may weaken the sensitivity of the kinetic energy of $e_g$ electrons on the degree of lattice distortion in $La_{1-x}Ba_xMnO_3$.

• 대한전자공학회논문지
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• 제21권2호
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• pp.36-46
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• 1984

Ga1-xlnxSe 단결정을 X=0.0∼0.1영역과 X=0.8-1.0영역에서 Bridgman방법으로 성장시켰다. 성장된 Ga1-xlnxSe 단결정은 X=0.0∼0.1영역에서는 hexagonal구조, X=0.8∼1.0영역에서는 rhombohedral 구조를 가지고 있었다. CaInSe 단결정은 간접천이형 energy gap을 가지고 있었으며, 15°K에서 250°K로 시편의 온도가 상승할 때 energy gap 은 감소되었고, 온도계수는 (-2.4∼-4.3)×10-4eV/K으로 주어졌다. Ga1-xlnxSe 단결정의, energy gap에 온도 의존성은 Schmid의 electron-phonon 상호작용의 이론으로 설명할 수 있었다.

• 한국결정성장학회지
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• 제16권1호
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• pp.8-11
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• 2006

The magnetic properties and crystal structures of $Sm_yGd_{2-y}Fe_{17-x}Si_x$ alloys ($0\leq\;x\leq2\;and\;y=0\~1.67$) have been investigated using x-ray diffraction and magnetic measurements. The $Sm_yGd_{2-y}Fe_{17-x}Si_x$ specimens were crystallized to the rhombohedral $Th_2Zn_{17}-structure$ with less than $5mol\%$ of impurities. The unit cells of the mixed rare-earth samples are smaller than those of $Sm_2Fe_{17}\;and\;Gd_2Fe_{17}.$ For example, the $T_c\;of\;SmGdFe_{17}\;(255^{\circ}C)$ is approximately 160 and $800^{\circ}C)$ higher than that of $Sm_2Fe_{17}\;and\;Gd_2Fe_{17},$ respectively. The $T_cs$ measured for $Sm_yGd_{2-y}Fe_{17-x}Si_x$ samples, 280 to $290^{\circ}C)$, are among the highest values observed for a $R_2Fe_{17-x}M_x$ intermetallic where M is a substituent other than cobalt.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.892-897
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• 2001

Variations of dielectric and piezoelectric properties and associated phase transformation of <001> -oriented rhombohedral 0.92Pb (Zn$\sub$1/3/Nb$\sub$2/3/)O$_3$-0.08PbTiO$_3$ single crystals were investigated. The longitudinal strain level was found to abruptly increase at 15 kV/cm, corresponding to that where an induced phase appears within a multidomain matrix. Drastic decreases in the dielectric constant, transverse coupling, and transverse piezoelectric coefficient associated with the E-field induced phase were the result of increased crystal anisotropy in PZN-PT crystals. By contrast, the thickness coupling increased from 53 % at 0 kV/cm to 64 % at 45 kV/cm, also associated with this phase transition under the E-field. The measured dielectric and piezflelectric properties found for the induced phase state were nearly identical to those of <001> poled tetragonal (1-x)PZN-xPT (x>0.1) crystals. Based on these results, it is evident that the symmetry of induced phase is tetragonal.

• 대한전기학회논문지
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• 제41권6호
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.255-258
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• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.615-619
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• 2015

In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, 8/65/35 PLZT ceramics were fabricated by the conventional solid-state method with the addition of $Bi_2O_3$, CuO, $Li_2CO_3$ and the variation of sintering temperature from $930^{\circ}C$ to $990^{\circ}C$. The XRD pattern of all specimens indicated general perovskite structure and the rhombohedral phase were observed. Curie temperature ($T_c$) of all specimens was observed in the vicinity of about $190^{\circ}C$. Density, coercive field and remnant polarization of the specimen sintered at $950^{\circ}C$ was $7.55g/cm^3$, 8.895 kV/cm, $11.22{\mu}C/cm^2$, respectively. EC effect of PLZT ceramics was measured by indirect method and the temperature change ${\Delta}T$ due to the electrocaloric effect was calculated by Maxwell's relations. ${\Delta}T$ of ceramic sintered at $950^{\circ}C$ was $0.21^{\circ}C$ under application of 40 kV/cm at $190^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1301-1302
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• 2007

The multilayered $Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$/$Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_{3}/Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$[PZT(4060)/(6040)/(4060)] thin films were deposited by RF sputtering method on the Pt/TiO2/SiO2/Si substrate. We investigated the effects of deposition conditions on the structural and electrical properties of the multilayered PZT thin films. All the multilayered PZT thin films showed dense and homogeneous structure without the presence of the rosette structure. The dielectric properties such as dielectric constant, loss, remanent polarization of the multilayered PZT thin film were superior to those of single composition PZT(4060) and PZT(6040) films, and those values for the multilayered PZT(10/20/10) thin film were 903, 1.01% and $25.60{\mu}C/cm^2$. This study suggests that the design of the multilayered PZT thin films capacitor with tetragonal and rhombohedral phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.391-395
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• 2000

In this study, the temperature coefficient of resonant frequency(TC $F_{r}$), dielectric and piezoelectric properties of Pb[(S $b_{1}$2/N $b_{1}$2/)$_{0.0035}$-(M $n_{1}$3/N $b_{2}$3/)$_{0.0065}$-(Z $r_{x}$ $Ti_{1-x}$ )$_{0.90}$] $O_3$ceramics is investigated with Zr/Ti ratio. The dielectric constant and electromechanical coupling factor( $k_{p}$) showed the highest values of 1257, 0.562 respectively when the Zr/Ti ratio is 49.5/50.5. The mechanical quality factor( $Q_{m}$) is the lowest value of 713 when the Zr/Ti ratio is 49.5/50.5, and increased with the decrease of the Zr/Ti ratio. The temperature coefficient of resonant frequency(TC $F_{r}$) change abruptly at the morphotropic phase boundary(MPB), which is between the rhombohedral phase with highly negative TC $F_{r}$ of -106ppm/$^{\circ}C$ and the tetragonal phase with highly positive TC $F_{r}$ of +64pp $m^{\circ}C$ as Zr/Ti ratio changes from 50/50 to 49.5/50.5.50.5..5.50.5.5.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.296-299
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2[hr], respectively. The structural, dielectric and piezoelectric properties with addition of NiO were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of NiO. But the grains of the specimens doped with 0.4wt% NiO were increased, due to deposits of excess NiO at grain boundaries in the liquid phase. Relative dielectric constant and dielectric loss of the specimen doped with 0.1wt% NiO were 701 and 0.026, respectively.