• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1001-1004
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• 2001

The (Sr$_{l-x}$Ca$_{x}$)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased -with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increases.ses.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.257-257
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• 2011

The amorphous indium-gallium-zinc-oxide (a-IGZO) materials for use in high performance display research fields are strongly investigated due to its good performance, such as high mobility and better transparency. However, the stability of a-IGZO materials is increasingly becoming one of critical issues due to the sub-gap electron trap sites induced by rough interfaces during deposition processing. It is well-known that the threshold voltage shift is related to interface roughness and oxygen vacancy formed by breaking weak chemical bonds. Here, we report the better properties of transparent oxide transistors by reducing the threshold voltage shift with an external rf plasma supported magnetron sputtering system. Mainly, our sputtering method causes the surface of sample to be sleek, so that it prevents the formation of various defects, such as shallow electron trap sites in the interface. External rf power was applied from 0 to 50W during RF sputtering process to enhance the stability of our oxide transistor without having a large voltage shift. To observe the effects of external rf-plasma source on the properties of our devices, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) are carried out to observe surface roughness and morphology of sputtered thin film. In addition, typical electrical properties, such as I-V characteristics are analyzed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.205-212
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• 2003

RF sputtering process was applied to produce thin hydroxyapatite［HA, Ca10($PO_4$)$_{6}$ $ (OH)_2$films on Ti-6Al-4V alloy substrates. To make a 101.6 mm dia.${\times}$5 mm HA target, the commercial HA powder was first calcinated for 3h at $200^{\circ}C$. A certain amount of the calcinated HA powder was pressed under a pressure of 20,000 psi by the cold isostatic press(CIP) and the pressed HA target was sintered for 6 h at $1,200^{\circ}C$. The effects of different heat treating conditions on the bonding strength between HA thin films and Ti-6Al-4V alloy substrates were studied. Before deposition, the alloy substrates were annealed for 1 h at $850^{\circ}C$ under $3.0${\times}$10^{-3}$ Xtorr, and after deposition, the hydroxyapatite/Ti-6Al-4V alloy thin films were annealed for 1 h at 400, 600 and $800^{\circ}C$ under the atmosphere, respectively. Experimental results represented that the HA thin films on the annealed substrates had higher hardness than non-heat treated substrates before the deposition.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.465-472
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• 2005

Preparation of copper film on PET substrate was carried out by cyclic operation of RF-magnetron­sputtering under continuous operation of ECR-CVD. The purpose of this study is aimed to an increase in deposition rate with keeping excellent adhesion between copper film and PET. In order to optimize the sputtering time under continuous ECR-CVD, cyclic operation concept is employed. By changing parameters of cyclic operation such as split of e and cycle time of A, the characteristics and thickness of the deposited copper film are controlled. As $\theta$ value increase, film thickness could confirm to increase and its surface resistivity value decreases. The highest adhesive strength appears at $\theta=0.33$ and cycle time of 30 min. The uniformity of copper film shows $5\%$ in our experimental range.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.103-103
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• 1999

CeO2 는 cubic 구조의 일종인 CeF2 구조를 가지며 격자 상수가 0.541nm로 Si의 격자 상수 0.543nm와 거의 비슷하여 Si과의 부정합도가 0.35%에 불과하여 CeO2를 Si 기판 위에 에피택셜하게 성장시킬 수 있는 가능성이 크다. 따라서 SOI(Silicon-On-Insulator) 구조의 실현을 위하여 Si 기판위에 CeO2를 에피택셜하게 성장시키려는 많은 노력이 있었다. 또한 CeO2 는 열 적으로 대단히 안정된 물질로서 금속/강유전체/반도체 전계효과 트랜지스터(MFSFET : metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이에 완충층으로 사용되어 강유전체의 구성 원자와 Si 원자들간의 상호 확산을 방지함으로써 경계면의 특성을 향상시기키 위해 사용된다. e-beam evaporation와 laser ablation에 의한 Si 기판 위의 CeO2 격자 성장에 관한 많은 보고서가 있다. 이 방법들은 대규모 생산 공정에서 사용하기 어려운 반면 RF-magnetron sputtering은 대규모 반도체 공정에 널리 쓰인다. Sputtering에 의한 Si 기판위의 CeO2 막의 성장에 관한 보고서의 수는 매우 적다. 이 논문에서는 Ce target을 사용한 reactive rf-magnetron sputtering에 의해 Si(100) 과 Si(111) 기판위에 성장된 CeO2 의 구조 및 전기적 특성을 보고하고자 한다. 주요한 증착 변수인 증착 power와 증착온도, Seed Layer Time이 성장막의 결정성에 미치는 영향을 XRD(X-Ray Diffractometry) 분석과 TED(Transmission Electron Diffration) 분석에 의해 연구하였고 CeO2 /Si 구조의 C-V(capacitance-voltage)특성을 분석함으로써 증차된 CeO2 막과 실리콘 기판과의 계면 특성을 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.

• Journal of the Korean Ceramic Society
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• v.44 no.11
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• pp.645-649
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• 2007

The $La_{0.7}Sr_{0.3}MnO_3$ was deposited on $SiO_2/Si$ substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was $350^{\circ}C$. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.403-409
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• 1999

The dielectric and pyroelectric properties of $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) thin films growtn on Pt/Ti/NON/Si us-ing RF magnetron sputtering have been investigated. With increasing the substrate temperature during de-position of the BST film in the range of 300-$600^{\circ}C$ the dielectric and pyroelectric constants of the film were increased due to improved crystallinity of the film. In addition the dependence of the microstructural and electrical properties of BST films onthe deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BST films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BSt films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrodes. and thus so were the pyrolelectric pro-perties of the BST film. The highest value of pyroelectric coefficient at room temperature obtained in this work was $nCcm^{-2}K^{-1}$ which is much higher than those previously reported on other perovskite fer-roelectric thin films.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.309-312
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• 2007

Sputter deposition followed by surface treatment was studied using reactive RF plasma as a method for preparing titanium oxide($TiO_{2}$) films on indium tin oxide(ITO) coated glass substrate for dye-sensitized solar cells(DSSCs). Anatase structure $TiO_{2}$ films deposited by reactive RF magnetron sputtering under the conditions of $Ar/O_{2}$(5%) mixtures, RF power of 600W and substrate temperature of $400^{\circ}C$ were surface-treated by inductive coupled plasma(ICP) with $Ar/O_{2}$ mixtures at substrate temperature of $400^{\circ}C$, and thus the films were applied to the DSSCs, The $TiO_{2}$ Films made on these exhibited the BET specific surface area of 95, the pore volume of $0.3cm^{2}$ and the TEM particle size of ${\sim}25$ nm. The DSSCs made of this $TiO_{2}$ material exhibited an energy conversion efficiency of about 2.25% at $100mW/cm^{2}$ light intensity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.158-158
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• 2011

$Cu(In_xGa_{1-x})Se_2$ (CIGS) thin film solar cell is one of the most promising solar cells in photovoltaic devices. CIGS has a direct band gap which varied from 1.0 to 1.26 eV, depending on the Ga to In ratio. Also, CIGS has been studying for an absorber in thin film solar cells due to their highest absorption coefficient which is $1{\times}10^5cm^{-1}$ and good stability for deposition process at high temperature of $450{\sim}590^{\circ}C$. Currently, the highest efficiency of CIGS thin film solar cell is approximately 20.3%, which is closely approaching to the efficiency of poly-silicon solar cell. The deposition technique is one of the most important points in preparing CIGS thin film solar cells. Among the various deposition techniques, the sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have been prepared by rf magnetron sputtering method using a single target. The optical and structural properties of CIGS films are generally dependent on deposition parameters. Therefore, we will explore the influence of deposition power on the properties of CIGS films and the films will be deposited by rf magnetron sputtering using CIGS single target on Mo coated soda lime glass at $500^{\circ}C$. The thickness of CIGS films will be measured by Tencor-P1 profiler. The optical properties will be measured by UV-visible spectroscopy. The crystal structure will be analyzed using X-ray diffraction (XRD). Finally the optimal deposition conditions for CIGS thin films will be developed.