• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.279-283
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• 2014

In this paper, we present an economical and practical standard to install a bypass diode in a thin-film PV module. This method helps to reduce heat generation and to prevent module degradation due to excess current from reverse bias. The experimental results confirm that for different numbers of solar cells, there is a relation between the excess reverse current and the degradation of solar cells in a-Si:H modules. The optimal number of solar cells that can be connected per bypass diode could be obtained through an analysis of the results to effectively suppress the degradation and to reduce the heat generated by the module. This technique could be expanded for use in high power crystalline Si PV modules.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.343-347
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• 2004

As a first demonstration of proven stability for a-Si, over 7000h of stability data for a high drive current a-Si AMOLED pixel driver circuit was presented at SID 2004. Also demonstrated was an AMOLED display operating at 6V using the IGNIS 4-T pixel driver circuit [1] and based on a top-emission reverse OLED architecture. In this paper, an update to that information is presented with test data that is representative of lifetime in excess of 25,000 hours taking into account pertinent acceleration factors, extracted from high current drive and high temperature stressing conditions. Lifetimes will continue to increase, given the high and ever-increasing OLED efficiency.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

• ETRI Journal
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• 제15권3_4호
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• 대한전자공학회논문지
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• 제5권2호
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• pp.8-14
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• 1968

트란지스타 단일안정 멀티바이부래타(monostable multi-vibrator)와 시리콘턴넬 다이오드 (T.D)로써 구성된 전류파 파고변별기를 설계하여 그 특성을 조사하였다. 피측정 전류액의 범위는 50㎂-5.23mA이며, 이 범위에 있어서 측정된 최대비직선도는 ±0.75% 이었다. 이 변별기의 전류액 분해능은 T.D를 통하여 흐르는 편의전류에 따라서 약간 달라지며 역방향 편의전류가 3 mA 일때, 만일 5%의 과잉파고를 주용한다면 그 분해시간은 2μS이다. 다음에 이 변별기의 임계치 안정도는 주로 T.D의 턴넬전류의 최대치 1 의 안정도에 의하여 좌우되며 환경온도의 변화범위가 0℃∼50℃일때는 최대비직선도 즉 ±0.75T 보다 더큰 임계치변화는 관측되지 않았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.235-238
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• 1996

An inverted double channel AIGaAs/lnGaAs/GaAs heterostructure grown by LP-MOCVD is demonstrated and discussed. Sheet carrier densities in excess of $4.5{\times}10^{12}cm^{-2}$ at 300K are obtained with a hall mobility of $5010cm^2/V{\cdot}s$. The proposed device with a $1.8{\times}200{\mu}m^2$ gate dimension reveals an extrinsic transconductance as high as 320 mS/mm and a saturation current density as high as 820 mA/mm at 300K. This is the highest current density ever reported for GaAs MODFET's with the same gate length. Significantly improvements on gate voltage swing (up to 3.5 V) and on reverse breakdown voltage (-10V) are demonstrated due to inverted structure.

• 한국융합학회논문지
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• 제2권4호
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• pp.29-37
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• 2011

종래의 배전계통에 있어서의 전력조류는 변전소에서 선로말단을 향한 단 방향이었지만, 신에너지전원(분산전원)이 연계된 배전계통의 경우에는 그 출력용량의 여부에 따라 양방향의 전력조류가 발생할 가능성이 있어, 계통운용상 여러 가지의 문제점이 야기될 수 있다. 분산전원은 대규모전원의 보완적 역할과 배전선로 상의 국부적 부하 감당 역할을 부과하여 그의 적극적 활용을 꾀하기 위해서는, 분산전원으로부터 배전계통에 전력을 공급하는 역 조류의 기능을 허용할 수 있는 양방향 보호협조방식의 체제를 확립할 필요가 있다. 따라서 본 연구에서는 분산전원 연계에 따른 보호협조 기본 방안과 부하절체 운전에 따른 보호협조 방안, 변압기결선에 따른 보호협조 방안 등에 대한 알고리즘을 제시하였다. 또한, 이론적인 계산법(대칭좌표법)과 MATLAB/SIMULINK에 의하여 실 계통에서의 양방향 보호협조에 관련된 문제점을 분석하고, 해결방안을 제시하였다.