• 제목/요약/키워드: Reverse current

검색결과 694건 처리시간 0.035초

인터리브드된 전류 주입형 고승압 DC-DC 컨버터 (Interleaved Current-fed High Step-up DC-DC Converter)

  • 이준호
    • 전기전자학회논문지
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    • 제24권2호
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    • pp.586-591
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    • 2020
  • 본 논문에서는 인터리브된 전류 주입형 고승압 DC-DC 컨버터가 제안된다. 높은 전압 이득 외에도 인터리빙 방식을 채택하여 낮은 리플 입력 전류가 달성된다. 또한 제안 된 컨버터의 소프트 스위칭 특성은 전력 스위치의 스위칭 손실을 줄이고 변환 효율을 높인다. 변압기의 누설 인덕턴스를 활용하여 다이오드의 전류 변화율을 제어함으로써 출력 정류기의 역 회복 문제도 완화된다. 200W 프로토 타입에서 얻은 실험 결과에 대해 설명한다.

코발트 실리사이드 접합을 사용하는 0.15${\mu}{\textrm}{m}$ CMOS Technology에서 얕은 접합에서의 누설 전류 특성 분석과 실리사이드에 의해 발생된 Schottky Contact 면적의 유도 (Characterization of Reverse Leakage Current Mechanism of Shallow Junction and Extraction of Silicidation Induced Schottky Contact Area for 0.15 ${\mu}{\textrm}{m}$ CMOS Technology Utilizing Cobalt Silicide)

  • 강근구;장명준;이원창;이희덕
    • 대한전자공학회논문지SD
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    • 제39권10호
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    • pp.25-34
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    • 2002
  • 본 논문에서는 코발트 실리사이드가 형성된 얕은 p+-n과 n+-p 접합의 전류-전압 특성을 분석하여 silicidation에 의해 형성된 Schottky contact 면적을 구하였다. 역방향 바이어스 영역에서는 Poole-Frenkel barrier lowering 효과가 지배적으로 나타나서 Schottky contact 효과를 파악하기가 어려웠다. 그러나 Schottky contact의 형성은 순방향 바이어스 영역에서 n+-p 접합의 전류-전압 (I-V) 동작에 영향을 미치는 것으로 확인되었다. 실리사이드가 형성된 n+-p 다이오드의 누설전류 증가는 실리사이드가 형성될 때 p-substrate또는 depletion area로 코발트가 침투퇴어 Schottky contact을 형성하거나 trap들을 발생시켰기 때문이다. 분석결과 perimeter intensive diode인 경우에는 silicide가 junction area까지 침투하였으며, area intensive junction인 경우에는 silicide가 비록 공핍층이나 p-substrate까지 침투하지는 않았더라도 공핍층 근처까지 침투하여 trap들을 발생시켜 누설전류를 증가시킴을 확인하였다. 반면 p+-n 다이오드의 경우 Schottky contact이발생하지 않았고 따라서 누설전류도 증가하지 않았다. n+-p 다이오드에서 실리사이드에 의해 형성된 Schottky contact 면적은 순방향 바이어스와 역방향 바이어스의 전류 전압특성을 동시에 제시하여 유도할 수 있었고 전체 접합면적의 0.01%보다 작게 분석되었다.

재활용을 고려한 역공급사슬 시뮬레이션 모델 개발 (A Development of Reverse Supply Chain Simulation Model Considering a Recycling)

  • 임석진;박병태
    • 대한안전경영과학회지
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    • 제11권4호
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    • pp.193-199
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    • 2009
  • Recently, an industrial production-distribution planning problem has been widely investigated in Supply Chain Management(SCM). One of the key issues in the current SCM research area is reverse logistics network. This study have developed a simulation model for the reverse logistics network. The simulation model analysis reverse logistics network issues such as inventory policy, manufacturing policy, transportation mode, warehouse assignment, supplier assignment. Computational experiments using commercial simulation tool ARENA show that the real problems. The model can be used to decide an appropriate production-distribution planning problem in the research area.

전기자동차 배터리 역물류 프로세스 연구 (Reverse Logistics Process for Electric Vehicle Batteries)

  • 서동민;김용수;김현수
    • 산업경영시스템학회지
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    • 제34권3호
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    • pp.57-70
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    • 2011
  • To address global climate change, various governments are investing in electric vehicle research and, especially in Korea, the application of electric vehicles to public transportation. The lithium batteries used in electric vehicles typically have an expected life cycle of 2-5 years. If electric vehicles become commonly used, they will generate many discarded batteries that could be harmful to the environment. Additionally, lithium batteries are potentially explosive and should be handled appropriately. Thus, reverse logistics issues are involved in handling expired batteries efficiently and safely. Reverse logistics includes the collection, recycling, remanufacturing, and discarding of waste. This study developed a reverse logistics process for electric vehicle batteries after analyzing the as-is process for lead and lithium batteries. It also developed possible disposal regulations for electric vehicle batteries based on current laws regarding conventional batteries.

Fault-Tolerant Strategy to Control a Reverse Matrix Converter for Open-Switch Faults in the Rectifier Stage

  • Lee, Eunsil;Lee, Kyo-Beum
    • Journal of Power Electronics
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    • 제16권1호
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    • pp.57-65
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    • 2016
  • Reverse matrix converters, which can step up voltages, are suitable for applications with source voltages that are lower than load voltages, such as generator systems. Reverse matrix converter topologies are advantageous because they do not require additional components to conventional matrix converters. In this paper, a detection method and a post-fault modulation strategy to operate a converter as close as possible to its desired normal operation under the open-switch fault condition in the rectifier stage are proposed. An open-switch fault in the rectifier stage of a reverse matrix converter causes current distortions and voltage ripples in the system. Therefore, fault-tolerant control for open-switch faults is required to improve the reliability of a system. The proposed strategy determines the appropriate switching stages from among the remaining healthy switches of the converter. This is done based on reference currents or voltages. The performance of the proposed strategy is experimentally verified.

선로전환기 정,반위 표시등 설치 시험에 관한 연구 (Research on Test Installation of Switch and Normal, Reverse Indication Lamp)

  • 고양옥;김상엽;이남일;정호형
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2008년도 추계학술대회 논문집
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    • pp.1188-1194
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    • 2008
  • Derail accident of train and motorcar through signal override causes such a huge obstruction in train service. To minimize such derail accidents, number of bills were examined such as installing normal and reverse position indicator on the switch. A indicator was necessary which does not affect current equipments and not to be confused as traffic lights. Normal and reverse position indicator is installed in the middle of the rail in front of front rod of switch. It is to prevent derail accident while manual handling of obstacle by ease of verifying normal and reverse position by attendants or motorcar driver. Also, it is a device that prevents accidents by indicating normal and reverse position of switch during night service of motorcar. Such a prevention accomplished through thorough maintenancework of equipment, precise handling of operators and exterior factors are eliminated or perceived and treated well.

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폐 이동전화 역 물류 네트워크 품질수준 향상을 위한 정책대안 (Alternative Policies to Improve the Quality Level of Reverse Logistics Network for Used Mobile Phones)

  • 정영복;정병희
    • 품질경영학회지
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    • 제39권3호
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    • pp.422-431
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    • 2011
  • The number of mobile telecommunication service subscribers has been over 50 millions as of the end of Nov. 2010. And the number of used mobile phones has been growing continuously caused by shortened life cycle of products and competing between service providers, which is about 21 millions for only one year, 2010 in Korea. However, the quality level of reverse logistics network for used mobile phones is very low and statistics show that the collection ratio of them has not been over 40%. The current low collection ratio can be one of the significant causes of environment destruction due to the cumulated growth. Accordingly new practical alternative recovery systems are required in addition to the current one with EPR(Extended Producers Responsibility). In this paper, suggested are alternative policies to improve the quality level of reverse logistics network for used mobile phones effectively. ENR(Extended Network service providers Responsibility) is representative of them.

측정 온도 변화에 따른 백금실리사이드 정류성 접합의 파라미터 분석 (Parameter Analysis of Platinum Silicide Rectifier Junctions acceding to measurement Temperature Variations)

  • 장창덕;이용재
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 1998년도 춘계종합학술대회
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    • pp.405-408
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    • 1998
  • 본 논문에서는, 백금 실리사이드와 실리콘 접합에서 n형 실리콘 기판의 농도와 온도 변화(상온, 55$^{\circ}C$, 75$^{\circ}C$)에 따라서 전류-전압 특성을 분석하였다. 측정한 전기적 파라미터들은 순방향 임계전압, 역방향 항복전압, 장벽높이(øbn), 포화전류, 이상인자와 동적저항의 변화이다. 결과로써, 기판 농도의 변화에 따라서는 순방향 임계전압, 역방향 항복전압, 장벽 높이, 동적저항은 감소하였으나 포화전류와 이상인자는 증가하였다. 온도 변화에 따라서는 역방향 항복전압과 동적저항이 증가하였다.

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Unusual Electrical Transport Characteristic of the SrSnO3/Nb-Doped SrTiO3 Heterostructure

  • De-Peng Wang;Rui-Feng Niu;Li-Qi Cui;Wei-Tian Wang
    • 한국재료학회지
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    • 제33권6호
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    • pp.229-235
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    • 2023
  • An all-perovskite oxide heterostructure composed of SrSnO3/Nb-doped SrTiO3 was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO3 and Nb-doped SrTiO3 were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

펄스 직류 $CF_4$/ Ar 플라즈마 발생 장치의 전기적 특성 평가

  • 김진우;최경훈;박동균;송효섭;조관식;이제원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.236-236
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    • 2011
  • 본 연구 축전 결합형 고주파 플라즈마(CCP) 식각장비에 펄스 직류(Pulse DC) 전원을 인가하여 오실로스코프(oscilloscope)를 분석하여 전기적 특성을 평가하는 것이다. 펄스 직류전원 플라즈마 시스템에서는 다양한 변수를 이해하여야 한다. 본 실험에서 사용한 공정 변수는 Pulsed DC Voltage 300~500 V, Pulsed DC reverse time $0.5{\sim}2.0{\mu}s$, Pulsed DC Frequency 100~250 kHz 이었다. 실험 결과를 정리하면 1) Pulsed DC Voltage 가 증가할수록 Input voltage의 최대값은 336~520 V, 최소값은 -544~-920 V로 변하여 피크 투 피크 (peak to peak)값은 880~1460 V로 증가였다. Input current 또한 최대값은 1.88~2.88 A, 최소값은 -0.84~-1.28 A로 변하여 피크 투피크 값은 2.88~4.24 A로 증가하였다. 이는 척에 인가되는 전류와 파워의 증가를 의미한다. 2) Pulsed DC reverse time이 증가하면 Input voltage와 Input current값이 증가했다 (Input voltage의 피크 투 피크 값은 1200~1440 V, Input current의 피크 투 피크 값은 3.56~4.56 A). 3) Pulsed DC frequency가 증가하면 주기가 짧아져 Input voltage와 Input current값이 증가 한다 (Input voltage의 피크 투 피크 값은 900~1320 V, Input current의 피크 투 피크 값은 2.36~3.64 A). 결론적으로 펄스 직류 플라즈마의 다양한 전기적 변수들은 반응기 내부에 인가되는 Input voltage와 Input current의 값에 큰 영향을 준다는 것을 알 수 있었다.

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