• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 학술대회 논문집 정보 및 제어부문
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• pp.608-610
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• 2004

In continuous annealing line (CAL), POSCO, the center position control (CPC) is an essential technique that renders the steel-strip to pass at the center of a roll in order to prevent the strip from skewing or breaking. The CPC algorithm currently installed on the steering roll in the heating section of CAL is to control the strip position by using the reverse phase of error from the center position, without considering the dynamics of strip horizontal movement. Such algorithm may, unfortunately, require a manual operation occasionally when the range of strip input becomes wide, causing the dynamics 0 be dominant. Other PID-type control is rarely used in automatic operation because the excess of response may occur when the discontinuous points such as welding joints pass through rolls. In this paper, we identify the CPC system by using off-line data and design a compensator for the excessive dynamics by using the adaptive inverse control. Simulation result depicts the improved reliability of the proposed CPC system.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.630-634
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• 1997

In this paper,we will discuss in the forming process design of the making engine pulleys for automobiles. These pulleys are required to be made by precision deep drawing process because these are to be combined with bearings and engine timing belts. These pulleys are used of cold rolled steel plates starting with the initial blanking size of 115.2mm and the initial thickness of 1.2mm. Our deep drawing process is designed the continuous 5-steps process, that is, 1'st deep drawing, 2'nd reverse redrawing, 3'rd trimming, 4'th drawing-ironing and 5'yh piercing. This process need no in-process annealing.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.943-948
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• 1996

In this paper. we will discuss in making large size cylindrical shells with multithickness wall sections such as straight, stepped, tapered sides. These shells are constructed of type 6061 O temper aluminum starting with a blanking size of 877 mm plate. Its diameter to length ratio of 1 to 2.78 and a 36.7％ wall reduction is achieved by our continuous deep drawing process. This process required no in-process annealing. But after cold working, these shells is performed heat treatment to T6 condition. These shells are used for the making of seamless LPG pressure vessels after the spinning process. This process is composed of deep drawing, reverse redrawing, drawing-ironing and several ironing processes. In the verification of forming process design, we used DEFORM code.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.225-228
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• 2000

In this paper, we demonstrated an analytical description method of forward voltage drop and reverse voltage of $P^{+}N$ junction diode with <111> oriented antimony doped silicon wafer 60keV boron implantation computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 1min at $1000^{\circ}C$ inert gas condition.

• Journal of Plant Biotechnology
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• 제5권2호
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• pp.83-86
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• 2003

A reverse transcription polymerase chain reaction (RT-PCR) protocol was developed using two specific 22-mer primers located in coat protein gene of SPFMV. A 411 bp PCR-product was detected in virus infected plants as well as tissue culture raised sweet potato but not in healthy plants. For optimization of RT-PCR protocol, the optimum crude nucleic acid concentration, annealing temperature, primer concentration and numbers of PCR-cycle for maximum sensitivity and specificity were determined. The optimum condition for RT-PCR was as follows: RT-PCR reaction mixture was one-step mixture, containing 50 pmol of primer, 30 units of reverse transcriptase, 5 units of RNasin, and the crude nucleic acid extracts (200 ng). In RT-PCR, cDNA was synthesized at $42^{\circ}C$ for 45 min before a quick incubation on ice after pre-denaturation at $95^{\circ}C$ for 5 min. The PCR reaction was carried out for 40 cycles at $96^{\circ}C$ for 30 see, $63^{\circ}C$ for 30 sec, $72^{\circ}C$ for 1 min, and finally at $72^{\circ}C$ for 10 min. The viral origin of the amplified product was confirmed by sequencing, with the sequence obtained having $95-98\%$ homology with published sequence data for SPFMV. The benefits of this RT-PCR based detection of SPFMV would be simple, rapid and specific.

• 대한교통학회지
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• 제17권5호
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• pp.111-122
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• 1999

소화물 일관 운송 과정에서 발생하는 직접비용을 최소화하는 수리 모형과 해법이 제안되었다. 고려되는 비용으로는 화물 운송을 위한 차량 운행에 필요한 제반 비용인 링크 비용과 터미널에서 일어나는 하차, 분류, 재적 재등 하역 작업에서 발생하는 노드 비용을 감안하였고 총비용을 줄이기 위한 화물의 운송 경로가 모형의 결정변수이다. 해법으로는 최종해의 품질은 다소 미흡하나 계산 시간이 짧은 Steepest Descent Method와 최종해의 품질이 우수하나 계산 시간이 많이 소요되는 Simulated Annealing Method를 활용한 두개의 알고리즘이 고안되었다. 최적해를 찾아가기 위한 탐색의 출발점이 되는 초기해는 Dijkstra의 최단경로 알고리즘을 수정하여 찾는다. 예제를 통하여 알고리즘의 계산 과정을 설명하였고 제시된 두 방법의 최종해는 초기해에 비하여 비용 측면에서 각각 12%. 15%의 절감 효과가 있음을, 적재율 측면에서 초기해의 62.6%에서 각각 774%. 87.4% 향상됨을 확인하였다.

• 한국임상수의학회지
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• 제23권3호
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• pp.300-307
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• 2006

In the present study, methods of the reverse transcription-polymerase chain reaction(RT-PCR) were evaluated for the rapid detection and differentiation of transmissible gastroenteritis virus(TGEV), porcine epidemic diarrhea virus(PEDV) and rotavirus in piglets suffering from diarrhea. For the purposes, the PCR conditions were first confirmed for the amplification of VP7 gene of rotavirus and N gene of TGEV and PEDV using each specific primers and their annealing temperature. Multiplex RT-PCR methods were further determined to distinguish these viral infections and the results are as follows. For the specific amplification of these viral genes, the reliable PCR condition was determined as 30 cycles of reaction consisting each 1 min of denature at $94^{\circ}C$, annealing at $42^{\circ}C$ and polymerization at $72^{\circ}C$ with 1.0 mM $MgCl_2$. It was able to differentiate these viral infections in the intestines and feces of piglets suffering from diarrhea by duplex PCR for TGEV and PEDV and single PCR for rotavirus with a primer-annealing temperature of $42^{\circ}C$. When the multiplex RT-PCR were undertaken for the field samples, 17 cases of PEDV and 5 cases of rotavirus infections were differential diagnosed in a total of 92 samples of intestines and feces of the piglets with diarrhea.

• 응용통계연구
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• 제34권2호
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• pp.167-175
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• 2021

준지도학습(semi-supervised learning)은 목표값이 있는 데이터와 없는 데이터를 모두 이용하는 학습방법이다. 준지도학습에서 최근에 많은 관심을 받는 일치성규칙(consistency regularization)과 데이터 증대를 이용한 준지도학습(unsupervised data augmentation; UDA)은 목표값이 없는 데이터를 증대하여 학습에 이용한다. 그리고 성능 향상을 위해 훈련신호강화(training signal annealing; TSA)와 신뢰기반 마스킹(confidence based masking)을 이용한다. 본 연구에서는 UDA에서 사용하는 KL-정보량(Kullback-Leibler divergence)과 TSA 대신 JS-정보량(Jensen-Shanon divergene)과 역-TSA를 사용하고 신뢰기반 마스킹을 제거하는 방법을 제안한다. 실험을 통해 제안된 방법의 성능이 더 우수함을 보였다.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.13-20
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• 2000

In this paper, we demonstrated an analytical description method of forward votage drop and reverse leakage current of the junction barrier controlled schottky rectifier with linearly graded junction and abrupt junction models. In this case, the vertical depths of device are 1[${\mu}{\textrm}{m}$] and 2[${\mu}{\textrm}{m}$], respectively. Through ion implantation and annealing process, we obtain the data of lateral and depth from implanted 2-dimensional profiles. Also we applied these data to models that indicate the change of depletion each on linearly-graded and abrupt juction as the forward and revers bias. After applied depletion changes to electric characteristics of JBS rectifiers, we calculated the forward I-V, the reverse leakage current and temperatures vs. power dissipations according to each junction. When we compared the rectifier with calculated and measured data, from the calculated results, forward votage drop with linearly graded junction is lower than that of abrupt junction and reverse leakage current with linearly graded junction is lower(≒1$\times$10\ulcorner times) than that of abrupt junction. Also, the power dissipations according to different juction depth(1[${\mu}{\textrm}{m}$], 2[${\mu}{\textrm}{m}$]) of device are calculated. Seeing the calculated results, we confirmed it from analytic model that the rectifier with linearly graded junction retained a low power dissipation up to 600[$^{\circ}C$] in comparison with the rectifier with abrupt junction.

• 한국재료학회지
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• 제24권9호
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.