• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.3 s.333
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• pp.25-32
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• 2005

In this papers, we first, therefore, designed VCO(voltage controlled oscillator) that is composed of the dielectric resonator and the varactor diode, and then designed and fabricated PLDRO(phase locked dielectric resonator oscillator) that is combined with the sampling phase detector and loop filter. The measured results of the fabricated PLDRO at 12.05 [GHz] show the output power is 13.54 [dBm], frequency tuning range approximately +/- 7.5 [MHz], and Power variation over the tuning range less than 0.2 [dB], respectively. The phase noise which effects on bits error rate in digital communication is obtained with -114.5 [dBc/Hz] at 100 [KHz] offset from carrier, and The second harmonic suppression is less than -41.49 [dBc]. These measured results are found to be more improved than those of VCO without adopting PLL, and the phase noise and power variation performance characteristics show the better performances than those of conventional PLL.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.6
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• pp.570-579
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• 2009

In this paper, we presented a Vt-DRO with a wide electrical frequency tuning range, using open-loop gain method. The Vt-DRO was composed of 3-stages, resonator, amplifier and phase shifter. In order to satisfy an oscillation condition, we determined magnitude and phase of each stage. The measured S-parameter of cascaded 3-stages shows open-loop oscillation condition. Also, using measured open loop group delay, we derived the relation for electrical frequency tuning range. The Vt-DRO was implemented by connecting the input and the output of the designed open-loop and resulted in closed-loop. As a results, tuning-range of Vt-DRO is 82 MHz, which is close to the predicted results for tuning voltage 0${\sim}$10 V and shows linear frequency tuning at the center frequency of 5.3 GHz. The phase noise is -104 ${\pm}$1 dBc/Hz at 100 kHz offset frequency and power is 5.86${\pm}$1 dBm respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.613-624
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated and compared. So we have explained that the output power and phase noise properties of the Push-push FET DRO are depending on return loss and isolation characteristics of power combiner at the fundamental and the second harmonic frequencies. A Push-push oscillator for suppressing the fundamental frequency of 10 GHz and enhancing the second harmonic of 20 GHz has been designed and fabricated in microstrip configuration on 20 mil thick RT-Duroid($\varepsilon$$_{r}$ = 2.52) Teflon substrate. Return loss and isolation characteristics of T-junction and Wilkinson have been measured at the fundamental frequency of 10.2 GHz and the second harmonic frequency of 20.5 GHz. At the fundamental frequency, -12 dB return loss and -3.7 dB isolation have been measured for the T-junction power combiner, and -14 dB return loss and -11 dB isolation fur the Wilkinson power combiner. At the second harmonic frequency, -10 dB return loss and -7.5 dB isolation have been obtained for the T-junction power combiner, and -23 dB return loss and -22 dB isolation for the Wilkinson power combiner. As a result, we have confirmed that the oscillator based on the Wilkinson power combiner with better retrun loss and isolation characteristics produces more output power and better phase noise characteristics..

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1086-1096
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• 2011

In this paper, we present the trisection band-pass filter with a transmission zero at 2.63 GHz, which has a center frequency of 2.44 GHz, relative bandwidth of 5 %, and return loss of 18 dB, based on a multi-port ElectroMagnetic simulation. The coupling matrix for the trisection filter is calculated and this filter is transformed into band-pass filter prototype through a lossless 2-port circuit transformation. The J-inverter values and slope parameters of each individual resonator are computed using an EM simulation Y-parameters of the filter with multi port. The dimensions of desired filter are determined by matching the computed J-inverter and susceptance slope parameters to those of the prototype band-pass filter. Undesired cross-couplings are found to occur which does not appear in the prototype trisection filter. To overcome the problem of undesired couplings, the filter was optimized to satisfy the same frequency response of prototype filter. The validity of the proposed design method was verified through the implementation of the designed and optimized filter.

• Journal of electromagnetic engineering and science
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• v.17 no.3
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• pp.126-132
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• 2017

In this study, we designed, measured, and analyzed a rearranged L-shape magnetic resonance coupling wireless power transfer (MR-WPT) system for practical applications with laptops. The typical four resonator MR-WPT (Tx part: source loop and Tx coil; Rx part: Rx coil and load loop) is difficult to apply to small-sized stationary and mobile applications, such as laptop computers, tablet-PCs, and smartphones, owing to the large volume of the Rx part and the spatial restrictions of the Tx and Rx coils. Therefore, an L-shape structure, which is the orthogonal arrangement of the Tx and Rx parts, is proposed for indoor environment applications, such as at an L-shaped wall or desk. The relatively large Tx part and Rx coil can be installed in the wall and the desk, respectively, while the load loop is embedded in the small stationary or mobile devices. The transfer efficiency (TE) of the proposed system was measured according to the transfer distance (TD) and the misaligned locations of the load loop. In addition, we measured the TE in the active/non-active state and monitor-open/closed state of the laptop computer. The overall highest TE of the L-shape MR-WPT was 61.43% at 45 cm TD, and the TE decreased to 27.9% in the active and monitor-open state of the laptop computer. The conductive ground plane has a much higher impact on the performance when compared to the impact of the active/non-active states. We verified the characteristics and practical benefits of the proposed L-shape MR-WPT compared to the typical MR-WPT for applications to L-shaped corners.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.527-536
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• 2000

This paper discusses the design of self-oscillating mixer type low noise down converter using the microwave field effect transistor. The mixer is consists of local oscillator in which high stability dielectric resonator and band pass filter to get rid of spurious oscillation at intermediate frequency stage. The microstrip antenna was integrated in the same substrate which generate 12.3GHz and low noise amplifier was also added after antenna using 3 stage of high electron mobility transistors. The output frequency from the local oscillator was chosen as 11.3GHz for the Ku-band application. The measured phase noise was -804dBc/Hz at 100kHz offset frequency, and the gain was 7～12dB in frequency range from 12.0GHz to 12.7GHz. The noise figure at intermediate frequency stage was 64H. The designed model shows less conversion loss than previous diode type mixer. The proposed mixer can be used in digital satellite broadcasting and communication system and expected to use in next generation low noise block design.

• 한국ITS학회:학술대회논문집
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• v.2006 no.10
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• pp.187-190
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• 2006

In this paper, the equivalent circuit of tapped-line that is applied in the feeding of the band-pass filter with high coupling is suggested and the value of an equivalent circuit is mathematically defined. An equivalent circuit of tapped-line is composed by open stub and additional transmission line, and the electrical lengths of stub and line can be obtained by the impedance of resonator and the inverter. The new equivalent circuit of tapped-line can be simply applied of design of band-pass filter and leads to very good agreement compared with theoretical value. The coupled-line band-pass filter using equivalent circuit of tapped-line shows the insertion loss of 1.97 dB and the return loss of 18.5 dB at the center frequency of 5.8 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.9
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• pp.904-911
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• 2011

This paper deals with transmission characteristics of a new dual resonant structure for designing waveguide band-pass filter. The structure which has a pass-band between two adjacent stop-bands in a single body consists of circular ridged aperture and four armed conducting patch. The dual resonant behavior of the structure can be represented by a combination of LC series and parallel resonant circuits. Also these resonant properties can be easily controlled by varying the geometry of the aperture and four armed conducting patch. Actually, the structure is fabricated on the microstrip substrate by use of etching technique so that it is formed an iris type resonator which can be easily put into the transverse plane of the waveguide. We use WR-90 standard waveguide, adapters, and VNA(vector network analyzer) to measure the resonant characteristics of the structure. It is very useful to design and to improve the cutoff skirts characteristics in the waveguide band-pass filter design area.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.59-64
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• 2009

In this paper, the design of a new bandstop filter with an ultra-wide stopband is proposed using the metamaterial CRLH-TL. Instead of conventional periodic structures and multi-staged CRLH-TLs, extremely small one-cell type is adopted to circumvent the setbacks of conventional filters such as the lengthened ${\lambda}_g/2$-resonator ones or alternating impedance lowpass filter, and relatively slow skirt. Besides, for a very broad stopband, a strong coupling structure including stepped impedances is suggested and the zero-order resonance is made for effective size-reduction. The validity of the proposed design is proven through the fabrication and measurement, showing the overall size less than ${\lambda}_g/10$, the stopband wider than 12 GHz, 0.7 dB of the insertion loss.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.3
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• pp.784-794
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• 1996

In this papre, the design and the fabrication of the surface mountable voltage controlled oscillator is described for local oscillator in PCS(WACS/TDMA) handset. The VCO employs two silicon bipolar transistors of $f_{gamma}$ of 4 GHz as active devices. These are asembled to form the VCO on the 4 layer PCB of the size $12{\times}10mm$which provides the strip line resonator at the third layer. The fabricated VCO shows tuning rage over 50 MHz, phase noise -100 dBc/Hz at the 100 kHz frequency offset, and 0 dBm output power with the consumption of 22 mA at 3V. It is belived that the size will be more reduced by employing 1005 chip components and that the current consumption will be improved by employing transistors of higher $f_{gamma}$.