• Title/Summary/Keyword: Resistors Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si)

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Effect of Annealing Conditions on Properties of Ni-Cr Thin Film Resistor (Ni-Cr 박막 저항의 특성에 미치는 열처리 조건의 영향)

  • Ryu Sung-Rok;Myung Sung-Jea;Koo Bon-Keup;Kang Beong-Don;Ryu Jei-Chun;Kim Dong-Jin
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.145-150
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    • 2003
  • In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best annealing conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to annealing conditions$(200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C)$.

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Effect of Annealing Conditions on Properties of Ni-Cr Thin Film Resistor (Ni-Cr 박막 저항의 특성에 미치는 열처리 조건의 영향)

  • 류승목;명성재;구본급;강병돈;류제천;김동진
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.1
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    • pp.37-42
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    • 2004
  • In the electronic components and devices fabrication, thin film resistors with low TCR (temperature coefficient of resistance) and high precision have been used over 3 ㎓ microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because they have low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of S-type with excellent resistors properties by RF-sputtering. Also we reported the best annealing condition of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to annealing conditions($200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$)

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Effect of RF Sputtering Conditions on Properties of Thin Film Resistor for Microwave Device (초고주파용 박막저항의 특성에 미치는 RF 스파터링 조건의 영향)

  • Ryu, Sung-Rok;Koo, Bon-Keup;Kang, Beong-Don;Ryu, Jei-Chun;Kim, Dong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.913-917
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    • 2003
  • In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

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