• 제목/요약/키워드: Resistance-capacitance

검색결과 460건 처리시간 0.032초

나피온/전도성 나노입자 전기방사 웹을 이용한 고성능 이온성 고분자-금속 복합체 구동기의 제조 (High-Performance Ionic Polymer-Metal Composite Actuators Based on Nafion/Conducting Nanoparticulate Electrospun Webs)

  • 정요한;이장우;유영태
    • 폴리머
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    • 제36권4호
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    • pp.434-439
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    • 2012
  • 이온성 고분자-금속 복합체(ionic polymer-metal composite, IPMC) 구동기의 구동성능 향상을 위해 전기방사를 통해 제조된 나피온/전도성 나노입자 웹을 나피온 필름의 양면에 접합시켜 전해질막을 개질하였다. 전도성 나노입자는 다층탄소나노튜브(multiwalled carbon nanotube, MWNT)와 은 나노입자가 사용되었으며, 이를 각각 나피온 용액에 분산시켜 전기방사하였다. 개질된 IPMC는 향상된 구동변위, 응답속도 및 구동력을 나타내었으며 은 나노입자에 비해 MWNT가 더욱 뛰어난 구동변위와 구동력을 유도하였고, 전도성 나노입자가 포함되지 않은 전기방사 웹을 적용한 경우에도 성능향상이 관찰되었다. 제조된 IPMC의 우수한 구동성능은 전기방사 웹의 다공성에 의한 전해액 이동의 용이성, 고분산된 전도성 나노입자에 의해 유도된 높은 전기용량 및 낮은 전극 저항 때문인 것으로 분석되었다.

Properties Optimization for Perovskite Oxide Thin Films by Formation of Desired Microstructure

  • Liu, Xingzhao;Tao, Bowan;Wu, Chuangui;Zhang, Wanli;Li, Yanrong
    • 한국세라믹학회지
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    • 제43권11호
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    • pp.715-723
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    • 2006
  • Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

Fe 치환이$LiMn_{2}O_{4}$정극 활물질의 충방전 특성에 미치는 영향 (Effect Of Substituted-Fe for the Charge-discharge behavior Of $LiMn_{2}O_{4}$cathode materials)

  • 정인성;김민성;구할본;손명모;이헌수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.548-551
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    • 2000
  • Spinel phase LiF $e_{y}$M $n_{2-y}$ $O_4$samples are synthesized by calcining a LiOH.$H_2O$, Mn $O_2$and F $e_2$ $O_3$mixture at 80$0^{\circ}C$ for 36h in air. Preparing LiF $e_{y}$M $n_{2-y}$ $O_4$showed spinel phase with cubic phase. The ununiform distortion of the crystallite of the spinel LiF $e_{y}$M $n_{2-y}$ $O_4$was more stable than that of the pure. The discharge capacity of the cathode for the Li/LiF $e_{0.1}$M $n_{1.9}$ $O_4$cell at the first than that of the pure. The discharge capacity of the cathode for the Li/LiF $e_{0.1}$M $n_{1.9}$ $O_4$cell at the first cycle and at the 70th cycle was about 113 and 90mAh/g, respectively. This cell capacity was retained about 82% of the first cycle after 70th cycle. Impedance profile of this cell was more stable than that pure. The resistance, the capacitance and chemical diffusion coefficients of lithium ion showed approximately 80$\Omega$, 36133.87$\mu$F ; 1.4$\times$10$^{-8}$ c $m^2$ $s^{-1}$ , respectively. , respectively.ely.

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Ca와 Nb가 첨가된 $BaTiO_3$의 결함화학 (Defect Chemistry of Ca and Nb doped $BaTiO_3$)

  • 정재호;한영호;박순자
    • 한국재료학회지
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    • 제4권7호
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    • pp.798-807
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    • 1994
  • $BaTio_{3}$에 Ca가 첨가되면 상온 저항을 증가시키며 이는 $Ca^{2+}$$Ti^{4+}$를 치환하여 acceptor 불순물을 형성하기 때문이라고 생각된다. 그러나 $Ca^{2+}$$Ti^{4+}$보다 이온 반경이 크므로 그 자리를 치환하지 않는다는 주장도 있다. 본 실험에서는 $BaTiO_{3}$에 의한 acceptor가 존재하는지 알아보기 위하여 Ba/(Ti+Ca+Nb)=1이 되도록 Ca와 Nb를 첨가하여 산소 분압의 변화에 따른 고온 평형 전기 전도도를 측정하였다. 측정은 $1000^{\circ}C$에서 행하였으며 산소 분압은 $10^{-15}$ ~ 1 기압의 범위에서 조절하였다. 첨가된 Ca와 Nb의 농도를 변화시킨 결과, acceptor와 donor의 상호 보상 효과가 나타났다. 즉, Nb에 의한 donor를 보상하는 acceptor가 존재함을 확일하였고, 전도도 곡선의 결함 화학적인 해석에 의하여 Ca가 Ti자리를 치환함을 알았다. 이러한 acceptor의 존재는 ICTS에 의해서도 확인되었다.

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광공진 현상을 이용한 입체 영상센서 및 신호처리 기법 (Optical Resonance-based Three Dimensional Sensing Device and its Signal Processing)

  • 박용화;유장우;박창영;윤희선
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2013년도 추계학술대회 논문집
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    • pp.763-764
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    • 2013
  • A three-dimensional image capturing device and its signal processing algorithm and apparatus are presented. Three dimensional information is one of emerging differentiators that provides consumers with more realistic and immersive experiences in user interface, game, 3D-virtual reality, and 3D display. It has the depth information of a scene together with conventional color image so that full-information of real life that human eyes experience can be captured, recorded and reproduced. 20 Mega-Hertz-switching high speed image shutter device for 3D image capturing and its application to system prototype are presented[1,2]. For 3D image capturing, the system utilizes Time-of-Flight (TOF) principle by means of 20MHz high-speed micro-optical image modulator, so called 'optical resonator'. The high speed image modulation is obtained using the electro-optic operation of the multi-layer stacked structure having diffractive mirrors and optical resonance cavity which maximizes the magnitude of optical modulation[3,4]. The optical resonator is specially designed and fabricated realizing low resistance-capacitance cell structures having small RC-time constant. The optical shutter is positioned in front of a standard high resolution CMOS image sensor and modulates the IR image reflected from the object to capture a depth image (Figure 1). Suggested novel optical resonator enables capturing of a full HD depth image with depth accuracy of mm-scale, which is the largest depth image resolution among the-state-of-the-arts, which have been limited up to VGA. The 3D camera prototype realizes color/depth concurrent sensing optical architecture to capture 14Mp color and full HD depth images, simultaneously (Figure 2,3). The resulting high definition color/depth image and its capturing device have crucial impact on 3D business eco-system in IT industry especially as 3D image sensing means in the fields of 3D camera, gesture recognition, user interface, and 3D display. This paper presents MEMS-based optical resonator design, fabrication, 3D camera system prototype and signal processing algorithms.

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교류 리플이 21700 리튬 이온 배터리의 전기적 건강 상태 열화에 미치는 영향 분석 (Analysis of the Effect of Alternating Current Ripple on Electrical State of Health Degradation of 21700 Lithium-ion Battery)

  • 곽봉우
    • 전기전자학회논문지
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    • 제27권4호
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    • pp.477-485
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    • 2023
  • 본 논문에서는 AC 리플이 리튬 이온 배터리의 수명에 미치는 영향을 실험적으로 분석한다. 에너지 저장 시스템(ESS)의 이용 효율을 높이기 위해 양방향 전력변환시스템(PCS)이 사용되며, 계통 연계 시 구조상 계통 주파수의 2배의 주파수를 갖는 전류 리플이 배터리에 인가되게 된다. 따라서, AC 리플이 Li-ion 배터리의 노화에 미치는 영향에 대해 분석하기 위해 DC 및 DC+AC 리플 사양의 충/방전 프로파일을 적용하여 노화 실험이 수행되었다. 실험 결과를 바탕으로 직류 내부 저항(DCIR), 증분 용량(IC), 표면 온도를 분석하였다. 결과적으로 AC 리플이 노화에 직접적으로 영향을 미치지 않으며 특정 주기 이 후 배터리 노화가 둔화되는 것을 확인하였다. 이러한 결과는 AC 리플이 발생하는 어플리케이션에서 전류 리플을 줄이기 위해 적용된 필터를 개선하는 데 도움이 될 수 있다.

4H-SiC와 산화막 계면에 대한 혼합된 일산화질소 가스를 이용한 산화 후속 열처리 효과 (Effect of High-Temperature Post-Oxidation Annealing in Diluted Nitric Oxide Gas on the SiO2/4H-SiC Interface)

  • 김인규;문정현
    • 한국전기전자재료학회논문지
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    • 제37권1호
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    • pp.101-105
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    • 2024
  • 4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (Ron,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (Dit) at the SiO2/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO2/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N2 diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N2 gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO2/4H-SiC interface, thereby reducing the Dit.

Electrical Characterization of Ultrathin Film Electrolytes for Micro-SOFCs

  • Shin, Eui-Chol;Ahn, Pyung-An;Jo, Jung-Mo;Noh, Ho-Sung;Hwang, Jaeyeon;Lee, Jong-Ho;Son, Ji-Won;Lee, Jong-Sook
    • 한국세라믹학회지
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    • 제49권5호
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    • pp.404-411
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    • 2012
  • The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.

ZnO-Co3O4-Cr2O3-La2O3 세라믹스의 결함과 입계 특성에 미치는 CaCO3의 영향 (Effects of CaCO3 on the Defects and Grain Boundary Properties of ZnO-Co3O4-Cr2O3-La2O3 Ceramics)

  • 홍연우;하만진;백종후;조정호;정영훈;윤지선
    • 한국전기전자재료학회논문지
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    • 제31권5호
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    • pp.307-312
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    • 2018
  • Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% $CaCO_3$ doped $ZnO-Co_3O_4-Cr_2O_3-La_2O_3$ (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when $CaCO_3$ is added to ZCCLCa ($644{\Omega}cm$) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient ${\alpha}=78$, low leakage current of $0.06{\mu}A/cm^2$, and high insulation resistance of $1{\times}10^{11}{\Omega}cm$). The main defects $Zn_i^{{\cdot}{\cdot}}$ (AS: 0.16 eV, IS & MS: 0.20 eV) and $V_o^{\bullet}$ (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of $1,200^{\circ}C$ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.

가스 조성이 저유전상수 a-C:F 층간절연막의 특성에 미치는 영향 (Effect of gas composition on the characteristics of a-C:F thin films for use as low dielectric constant ILD)

  • 박정원;양성훈;이석형;손세일;오경희;박종완
    • 한국진공학회지
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    • 제7권4호
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    • pp.368-373
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    • 1998
  • 초고집적 회로의 미세화에 따라 다층배선에서 기생저항(parasitic resistance)과 정전 용량의 증가는 RC시정수(time constant)의 증가로 인하여 소자의 동작속도를 제한하고 있 다. 이로 인하여 발생되는 배선지연의 문제를 해결하기 위하여 매우 낮은 유전상수를 갖는 층간 절연물질이 필요하다. 이러한 저유전상수 층간절연물질로서 현재 유기계 물질중의 하 나인 a-C:F이 주목받고 있는 물질이다. 본 연구에서는 ECRCVD를 이용하여 a-C:F박막과 Si기판사이의 밀착력을 향상시키기 위하여 a-C:H박막을 500$\AA$증착한 후 a-C:F을 증착전력 500W에서 원료가스의 유량비($C_2F_6, CH_4/(C_2F_6+CH_4)$))를 0~1.0까지 변화시키면서 상온에서 증착하 였다. a-C:F박막의 특성은 SEM, FT0IR, XPS, C-V meter와 AFM등을 이용하여 두께, 결 합상태, 유전상수, 표면형상 및 표면 거칠기를 관찰하였다. a-C:F박막에서 불소함량은 가스 유량비가 1.0일 경우에는 최대 약31at.%정도 검출되었으며, 가스 유량비가 증가됨에 따라 증 가하였다. 또한 유전상수는 a-C:H의 유전상수 $\varepsilon$=3.8에서 $\varepsilon$=2.35까지 감소하였다. 이는 영 구 쌍극자 모멘트가 1.5인 C-H결합은 감소하고 영구 쌍극자 모멘트가 0.6, 0.5인 CF, CF2결 합이 증가하였기 때문이다. 하지만 $400^{\circ}C$에서 질소분위기로 1시간 동안 furnace열처리 후에 가스유량비가 1.0인 a-C:F박막에서 불소의 함량이 감소하여 C-F결합이 줄어들었다. 이로 인하여 유전상수가 열처리전의 2.7에서 열처리후 3.2까지 상승하였다.

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