• Journal of Chest Surgery
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• v.54 no.3
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• pp.186-190
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• 2021

Background: Pre-lifting of the sternum marked a major turning point in pectus excavatum repair. The author developed the crane technique in 2002 and successfully applied it to more than 2,000 cases using sternal wire stitching. However, blind sternal suturing limited the use of the wire-stitch crane. We propose a novel screw for sternal lifting as a new tool for the crane technique. Methods: We developed a screw system strong enough to withstand the pressure needed for sternum lifting. The screw was designed to have a broader thread to hold the bony tissue securely. The screw's sustaining power was tested using the torsion, driving torque, and axial pull-out tests in a polyurethane block and ex-vivo porcine sternum. Results: The screws were easily driven into the sternum, and the head of the screw was connectable to the table-mounted retractor. In the torsion test, the 2° offset torsional yield was 4.53 N·m (reference value, 1 N·m). In the polyurethane block driving torque test, the maximum torque was 0.98 N·m (reference value, 0.70 N·m). The axial pull-out test was 446 N (reference value, 100 N). The maximum pull-out resistance in the ex-vivo porcine sternum model was 1,516 N. Conclusion: The screw crane was strong enough to sustain the chest wall weight to be lifted. Thus, the screws could effectively replace the sternal wire stitching in crane pre-lifting of the sternum. We expect that application of the screw-crane will be easy and that it will improve the safety and success rate of pectus repair surgery.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.399-405
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• 2011

In this paper, we present the design of Q-band LC VCO and injection locking buffer for 77 GHz automotive radar sensor using 130 nm RF CMOS process. To improve the phase noise characteristic of LC tank, the transmission line is used. The negative resistance by the active device cross-coupled pair of buffer is used for high output power, with or without oscillation of buffer. The measured phase noise is -102 dBc/Hz at 1 MHz offset frequency and tuning range is 34.53~35.07 GHz. The output power is higher than 4.1 dBm over entire tuning range. The fabricated chip size is $510{\times}130\;um^2$. The power consumption of LC VCO is 10.8 mW and injection locking buffer is 50.4 mW from 1.2 V supply.

• Tuberculosis and Respiratory Diseases
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• v.45 no.2
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• pp.380-387
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• 1998

Background: Minimal pressure support(PSmin) is a level of pressure support which offset the imposed work of breathing(WOBimp) developed by endotracheal tube and ventilator circuits in pressure support ventilation While the lower applied level of pressure support compared to PSmin could induce respiratory muscle fatigue, the higher level than PSmin could keep respiratory muscle rest resulting in prolongation of weaning period during weaning from mechanical ventilation PSmin has been usually applied in the level of 5~10 cm$H_2O$, but the accurate level of PSmin is difficult to be determinated in individual cases. PSmin is known to be calculated by using the equation of "PSmin = peak inspiratory flow rate during spontaneus ventilation$\times$total ventilatory system resistance", but correlation of calculated PSmin and measured PSmin has not been known. The objects of this study were firstly to assess whether customarily applied pressure support level of 5~10 cm$H_2O$ would be appropriate to offset the imposed work of breathing among the patients under weaning process, and secondly to estimate the correlation between the measured PSmin and calculated PSmin. Method : 1) Measurement of PSmin : Intratracheal pressure changes were measured through Hi-Lo jet tracheal tube (8mm in diameter, Mallinckroft, USA) by using pulmonary monitor(CP-100 pulmonary monitor, Bicore, USA), and then pressure support level of mechanical ventilator were increased until WOBimp was reached to 0.01 J/L or less. Measured PSmin was defined as the lowest pressure to make WOBimp 0.01 J/L or less. 2) Calculation of PSmin : Peak airway pressure(Ppeak), plateau airway pressure(Pplat) and mean inspiratory flow rate of the subjects were measured on volume control mode of mechanical ventilation after sedation. Spontaneous peak inspiratory flow rates were measured on CPAP mode(O cm$H_2O$). Thereafter PSmin was calculated by using the equation "PSmin = peak inspiratory flow rate$\times$R, R = (Ppeak-Pplat)/mean inspiratory flow rate during volume control mode on mechanical ventilation". Results: Sixteen patients who were considered as the candidate for weaning from mechanical ventilation were included in the study. Mean age was 64(${\pm}14$) years, and the mean of total ventilation times was 9(${\pm}4$) days. All patients except one were males. The measured PSmin of the subjects ranged 4.0~12.5cm$H_2O$ in 14 patients. The mean level of PSmin was 7.6(${\pm}2.5\;cmH_2O$) in measured PSmin, 8.6 (${\pm}3.25\;cmH_2O$) in calculated PSmin Correlation between the measured PSmin and the calculated PSmin is significantly high(n=9, r=0.88, p=0.002). The calculated PSmin show a tendancy to be higher than the corresponding measured PSmin in 8 out of 9 subjects(p=0.09). The ratio of measured PSmin/calculated PSmin was 0.81(${\pm}0.05$). Conclusion: Minimal pressure support levels were different in individual cases in the range from 4 to 12.5 cm$H_2O$. Because the equation-driven calculated PSmin showed a good correlation with measured PSmin, the application of equation-driven PSmin would be then appropriate compared with conventional application of 5~10 cm$H_2O$ in patients under difficult weaning process with pressure support ventilation.

• Journal of Dental Rehabilitation and Applied Science
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• v.21 no.1
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• pp.1-14
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• 2005

The purpose of this study was to assess the loading distributing characteristics of implant prosthesis of internal connection system(ITI system) according to position and direction of load, under vertical and inclined loading using finite element analysis (FEA). The finite element model of a synOcta implant and a solid abutment with $8^{\circ}$ internal conical joint used by the ITI implant was constructed. The gold crown for mandibular first molar was made on solid abutment. Each three-dimensional finite element model was created with the physical properties of the implant and surrounding bone. This study simulated loads of 200N at the central fossa in a vertical direction (loading condition A), 200N at the outside point of the central fossa with resin filling into screw hole in a vertical direction (loading condition B), 200N at the centric cusp in a $15^{\circ}$ inward oblique direction (loading condition C), 200N at the in a $30^{\circ}$ inward oblique direction (loading condition D) or 200N at the centric cusp in a $30^{\circ}$ outward oblique direction (loading condition E) individually. Von Mises stresses were recorded and compared in the supporting bone, fixture, and abutment. The following results have been made based on this study: 1. Stresses were concentrated mainly at the ridge crest around implant under both vertical and oblique loading but stresses in the cancellous bone were low under both vertical and oblique loading. 2. Bending moments resulting from non-axial loading of dental implants caused stress concentrations on cortical bone. The magnitude of the stress was greater with the oblique loading than with the vertical loading. 3. An offset of the vertical occlusal force in the buccolingual direction relative to the implant axis gave rise to increased bending of the implant. So, the relative positions of the resultant line of force from occlusal contact and the center of rotation seems to be more important. 4. In this internal conical joint, vertical and oblique loads were resisted mainly by the implant-abutment joint at the screw level and by the implant collar. Conclusively, It seems to be more important that how long the distance is from center of rotation of the implant itself to the resultant line of force from occlusal contact (leverage). In a morse taper implant, vertical and oblique loads are resisted mainly by the implant-abutment joint at the screw level and by the implant collar. This type of implant-abutment connection can also distribute forces deeper within the implant and shield the retention screw from excessive loading. Lateral forces are transmitted directly to the walls of the implant and the implant abutment mating bevels, providing greater resistance to interface opening.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.10A
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• pp.1579-1587
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• 1999

Bias-dependent noise models of $0.2\mu\textrm{m}$ gate length P-HEMT's which are scalable with gate width are proposed. To predict S-parameters of the P-HEMT's the intrinsic parameters except for $\tau$ subtracted the offsets introduced in this paper are normalized to the gate width and then scaled. The small-signal model parameters are expressed as fitting functions of the drain current to $\textrm{I}_{dss}$ ratio and gate width. In addition, to estimate accurately noise parameters the noise temperature $\textrm{T}_{g}$ of the intrinsic resistance, the equivalent noise conductance $\textrm{G}_{ni}$ of the gate current noise source, and the equivalent noise conductance $\textrm{G}_{no}$ of the drain current noise source are adopted as the noise model parameters. The extracted values of $\textrm{T}_{g}$ are nearly independent of drain current and gate width and their average is around the ambient temperature. The extracted values of $\textrm{G}_{ni}$ are small enough to be neglected to the circuit characteristics. From the comparison of the noise model with only $\textrm{G}_{no}$ and that having $\textrm{T}_{g}$, $\textrm{G}_{ni}$ and $\textrm{G}_{no}$ to the measured data it is fund that even the former model is in good agreement with the measured noise parameters. Thus, from a practical point of view the noise model having only the drain current noise source is confirmed as a scalable bias-dependent model.