• 제목/요약/키워드: Resistance Temperature Coefficient

검색결과 538건 처리시간 0.026초

플러그 밸브의 포트형상 변화에 따른 유동특성 연구 (A study on the flow characteristics in a plug valve with various port shapes)

  • 최근우;박권종;김윤제
    • 유체기계공업학회:학술대회논문집
    • /
    • 유체기계공업학회 2000년도 유체기계 연구개발 발표회 논문집
    • /
    • pp.259-264
    • /
    • 2000
  • The functions of the plug valve are the control of flow rate as well closing and opening pipe lines. Analyses on the flow characteristics in plug valve port are required to improve the performance and safety at severe operating conditions such as high-pressure and high-temperature. In this study, numerical analyses are carried out with varying the opening rate (fraction of the full open to close) of the valve and the shapes of valve Uk: straight, convex, concave and mixed shapes. The parameters influencing the flow characteristics in the valve are the discharge coefficient( $C_v$) and the resistance coefficient( K). Therefore, the distributions of static pressure, velocity vector and stream lines are investigated, and $C_v$ and K are calculated in each opening rate and shape. In case of full open, the static pressure passed through the valve port has almost been recovered. However, in case of other opening rates, the pressure does not permanently regained due to pressure drop leading to loss. This phenomenon in each shape of the valve shows the different behaviors. Calculation results show that the mixed shape has the best flow attribute.

  • PDF

방전플라즈마 소결에 의한 자기 통전식 SiC계 세라믹 발열체 개발 (Development of Electroconductive SiC Ceramic Heater by Spark Plasma Sintering)

  • 신용덕;최원석;고태헌;이정훈;주진영
    • 전기학회논문지
    • /
    • 제58권4호
    • /
    • pp.770-776
    • /
    • 2009
  • The composites were fabricated by adding 0, 15, 30, 45[vol.%] $ZrB_2$ powders as a second phase to SiC matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(SPS) were investigated. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed in the XRD and the phase analysis of the electroconductive SiC ceramic composites. The relative density of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively 99.24[%], 87.53[%], 96.41[%] and 98.11[%] Phase analysis of the electroconductive SiC ceramic composites by XRD revealed mostly of ${\beta}$-SiC, $ZrB_2$ and weakly of $ZrO_2$ phase. The flexural strength showed the lowest of 114.44[MPa] for ${\beta}$-SiC+15[vol.%]$ZrB_2$ powders and showed the highest of 210.75[MPa] for composite no added with $ZrB_2$ powders at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites is accorded with the trend of the relative density. The electrical resistivity of the electroconductive SiC ceramic composites decreased with increased $ZrB_2$ contents. The electrical resistivity of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively $4.57{\times}10^{-1},\;2.13{\times}10^{-1},\;2.68{\times}10^{-2}\;and\;1.99{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature. The electrical resistivity of mono ${\beta}$-SiC and ${\beta}$-SiC+15[vol.%]$ZrB_2$ are negative temperature coefficient resistance(NTCR) in temperature ranges from $25[^{\circ}C]\;to\; 100[^{\circ}C]$. The electrical resistivity of ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]ZrB_2$ are positive temperature coefficient resistance(PTCR) in temperature ranges from $25[^{\circ}C]\;to\;100[^{\circ}C]$. It is convinced that ${\beta}$-SiC+30[vol.%]$ZrB_2$ composites by SPS for heater or ignitors can be applied.

텅스텐 첨가에 의한 적외선 소자용 바나듐 옥사이드의 특성 향상 (Improvement of bolometric properties of vanadium oxide by addition of tungsten)

  • 한용희;최인훈;김근태;신현준;치엔;문성욱
    • 한국재료학회:학술대회논문집
    • /
    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
    • /
    • pp.207-207
    • /
    • 2003
  • Uncooled infrared(IR) detectors that use a microbolometer with a large focal-plane array(FPA) have been developed with surface micromachining technology. There are many materials for microbolometers, such as metals, vanadium oxide, semiconductors and superconductors. Among theses, vanadium oxide is a promising material for uncooled microbolometers due to it high temperature coefficient of resistance(TCR) at room temperature. It is, however, is very difficult to deposit vanadium oxide thin films having a high TCR and low resistance because of the process limits in microbolometer fabrication. In general, vanadium oxides have been applied to microbolometer in mixed phases formed by ion beam deposition methods at low temperature with TCR in the range from -1.5 to -2.0%K.

  • PDF

세라믹/금속접합재의 열사이클피로에 따른 접합계면의 잔류응력분포 특성 (Singular Stress Field Analysis and Strength Evaluation in Ceramic/.Metal Joints)

  • 박영철;김현수;허선철;강재욱
    • 한국정밀공학회:학술대회논문집
    • /
    • 한국정밀공학회 1996년도 춘계학술대회 논문집
    • /
    • pp.709-713
    • /
    • 1996
  • The ceramic has such high qualities as light weight, abrasion resistance, heat resistance compared with metal, but since it is breakable, it can't be used as structural material and it is desirable to joining metal which is full of toughness, but, according as the ceramic/metal joint is executed at high temperature, the joint residual stress develops near the joint sides in the process of cooling the high temperature down to the suitable temperature due to difference of the thermal expansion coefficient between ceramic and metal, and the joint residualstress lowers the fracture strength. In this study, to ensure security and improvement of bending strength, 1 studies on see distribution shape of residual stress according to high thermal cycle, and the influnence of theraml cycle and distribution shape of residual stess on joint-strength.

  • PDF

Si기판상에 제작된 박막형 백금 측온저항체 온도센서의 특성 (Characteristics of Thin-film Type Pt-RTD's Fabricated on Si Wafers)

  • 홍석우;노상수;정귀상
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
    • /
    • pp.354-357
    • /
    • 1999
  • This paper describes on the electrical and physical charateristics thin-film type Pt-RTD\\`s on Si wafers, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer. The MgO medium layer had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of room temperature to 40$0^{\circ}C$

  • PDF

탄소강 담금질 공정의 온도 측정방법에 대한 고찰 (A Study on Temperature Measurement for Quenching of Carbon Steel)

  • 김동규;정경환;강성훈;임용택
    • 소성∙가공
    • /
    • 제19권1호
    • /
    • pp.25-31
    • /
    • 2010
  • To achieve desired microstructure and mechanical property of a manufacturing product, heat treatment process is applied as a secondary process after forging. Especially, quenching process is used for improving strength, hardness, and wear resistance since phase transformation occurs owing to rapid heat transfer from the surface of the specimen. In the present paper, a study on surface temperature measurement for water quenching of eutectoid steel was investigated. In order to determine the temperature history in experiments, three different measuring schemes were used by varying installation techniques of K-type thermocouples. Depending on the measured temperature distribution at the surface of the specimen, convective heat transfer coefficients were numerically determined as a function of temperature by the inverse finite element analysis considering the latent heat generation due to phase transformation. Based on the inversely determined convective heat transfer coefficient, temperature, phase, and hardness distributions in the specimen after water quenching were numerically predicted. By comparing the experimental and computational hardness distribution at three different locations in the specimen, the best temperature measuring scheme was determined. This work clearly demonstrates the effect of temperature measurement on the final mechanical property in terms of hardness distribution.

초음파 감쇠 및 전기저항 측정법에 의한 발전소 고온배관의 크리프손상 평가 (Nondestructive Creep Damage Evaluation of High-Temperature Pipelines by Ultrasonic Attenuation Measurement and Electric Resistance Methods)

  • 이인철;길두송;정계조;조용상;이상국
    • 한국해양공학회지
    • /
    • 제13권3호통권33호
    • /
    • pp.100-107
    • /
    • 1999
  • Due to the high temperature and pressure, the materials of pipeline in power plant are degraded by creep damage. So far, many conventional measurement techniques such as replica method, electric resistance method, adn hardness test method for creep damage have been used. Among them, the replica method has mainly been used for the inspection of components. But this technique is restricted to the applications at the surface of the objects and cannot be used to material inside. In this paper, the measuring methods of evaluation by using ultrasonic attenuation and electric resistance for the creep detection of creep damage in the form of cavities on grain boundaries or intergranular microcracks were carried out. Absolute measuring method of quantitave ultrasonic attenuation technique for 1Cr0.5Mo material degradation was analyzed for determining the creep degradation steps using life prediction formula. As a result of measurement for creep specimens, we founded that the coefficient of utrasonic attenuation was increased as the increase of creep life fracton(${phi}c$) and the decreasing rate of wlwctric resistance was also increased.

  • PDF

PCB 재질 및 Via hole 구성에 따른 LED 패키지의 특성 분석 (Analysis of LED Package Properties by PCB Material and Via-hole Construction)

  • 이세일;양종경;김성현;이승민;박대희
    • 전기학회논문지
    • /
    • 제59권11호
    • /
    • pp.2038-2042
    • /
    • 2010
  • In this paper, we confirmed the thermal & optical properties for improving the heat transfer coefficient by changing the via hole size and in FR4 PCB with the same area. Osram 1W power LED Package (Golden Dragon) was used and the K-factor which is relative constant between LED junction temperature and forward bias was measured with power source meter(KEITHLEY 2430) to measure the thermal resistance from PCB configuration. As results, thermal resistance in metal PCB came out to the lowest as $26 [^{\circ}C/W]$ and thermal resistance in FR4 PCB without via-holes emerged as the highest as $69 [^{\circ}C/W]$. However thermal resistance of FR4 PCB could have decreased until $32[^{\circ}C/W]$ in 0.6 mm by using the via hole. Also, the luminous flux could have improved, too.

The Development of an Electroconductive SiC-ZrB2 Ceramic Heater through Spark Plasma Sintering

  • Ju, Jin-Young;Kim, Cheol-Ho;Kim, Jae-Jin;Lee, Jung-Hoon;Lee, Hee-Seung;Shin, Yong-Deok
    • Journal of Electrical Engineering and Technology
    • /
    • 제4권4호
    • /
    • pp.538-545
    • /
    • 2009
  • The SiC-$ZrB_2$ composites were fabricated by combining 30, 35, 40 and 45vol.% of Zirconium Diboride (hereafter, $ZrB_2$) powders with Silicon Carbide (hereafter, SiC) matrix. The SiC-$ZrB_2$ composites, the sintered compacts, were produced through Spark Plasma Sintering (hereafter, SPS), and its physical, electrical, and mechanical properties were examined. Also, the thermal image analysis of the SiC-$ZrB_2$ composites was examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffractometer (hereafter, XRD) analysis. The relative density of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$, and SiC+45vol.%$ZrB_2$ composites were 88.64%, 76.80%, 79.09% and 88.12%, respectively. The XRD phase analysis of the sintered compacts demonstrated high phase of SiC and $ZrB_2$ but low phase of $ZrO_2$. Among the SiC-$ZrB_2$ composites, the SiC+35vol.%$ZrB_2$ composite had the lowest flexural strength, 148.49MPa, and the SiC+40vol.%$ZrB_2$ composite had the highest flexural strength, 204.85MPa, at room temperature. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ and SiC+45vol.%$ZrB_2$ composites were $6.74\times10^{-4}$, $4.56\times10^{-3}$, $1.92\times10^{-3}$, and $4.95\times10^{-3}\Omega{\cdot}cm$ at room temperature, respectively. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$ SiC+40vol.%$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites had Positive Temperature Coefficient Resistance (hereafter, PTCR) in the temperature range from $25^{\circ}C$ to $500^{\circ}C$. The V-I characteristics of the SiC+40vol.%$ZrB_2$ composite had a linear shape. Therefore, it is considered that the SiC+40vol.%$ZrB_2$ composite containing the most outstanding mechanical properties, high resistance temperature coefficient and PTCR characteristics among the sintered compacts can be used as an energy friendly ceramic heater or electrode material through SPS.

판형 휜을 갖는 열교환기의 휜효율에 관한 수치해석적 연구 (Numerical study for the fin efficiency of the heat exchanger having plate fins)

  • 강희찬
    • 설비공학논문집
    • /
    • 제11권6호
    • /
    • pp.903-911
    • /
    • 1999
  • This study is discussed about the heat transfer coefficient and the fin efficiency of the heat exchanger having plate fins. A new definition for the fin efficiency of the heat exchanger is proposed. More than one hundred cases were tested numerically for the plate fins having uniform and non-uniform heat transfer coefficient. The previous models for the fin efficiency and the pure heat transfer coefficient were applicable to the heat exchanger only when the NTU is very small. It was found that the fin efficiency of the heat exchanger was nearly the same as the normalized fin temperature. The present model could estimate the pure heat transfer coefficient within a few percent in the present test range of 0<NTU<2.5.

  • PDF