• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.309-314
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• 1996

We found that SOG which had been used in plarnarization of VLSI circuit fabrication at present could be used as a resist material for AFM lithography. In this experiment on the basis of previous studies, we improved the process flexibility by controlling the coating film thickness, etching time, etching selectively and proper applied voltage on the pattern size to apply for practical VLSI lithography process. We obtained pattern with the current of 5 nA at 60 V. The line width was 800 $\AA$. With the developed flexibility of SOG as a resist material, AFM lithography will be a expedient technique in the next generation DRAM fabrication.

• Polymer(Korea)
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• v.30 no.3
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• pp.187-195
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• 2006

Atomic force microscope (AFM)-based anodic oxidation lithography has gained great in forests in fabricating nanometer scale features on semiconductor or metal substrates beyond the limitation of optical lithography. In this article AFM anodic oxidation lithography and its organic resist layers are introduced based on our previous works. Organic resist layers of self-assembled monolayers, Langmuir-Blodgett films and polymer films aye suggested to play a key role in enhancing the aspect ratio of producing features, the lithographic speed, and spatial precision in AFM anodic oxidation lithography.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1268-1270
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• 1994

Fine lithographic technology in a submicron design regime is necessary for the fabrication of VLSI circuits. In such lithography, fine pattern delineation is performed by electron beam, ion beam and X-ray lithography instead of photolithography. Therefore, the new resist materials and development method have been required. So, we are investigating another positive E-beam resists which have high sensitivity and dry etching resistance, Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reacter. Methymethacrylate, tetramethyltin and styrene were chosen as the monomer to be used. The delineated pattern in the resist was developed with gas-flow-type reactor using an argon and 02 as etching gas. We studied about the effects of discharge power and mixing rate of the co-polymerized thin :film. The molecular structure of thin film was investigated by ESCA and IR, and then was discussed in relation to its quality as a resist.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.61-66
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• 2015

Recently, the major trends of NIL are high throughput and large area patterning. For UV NIL, if it can be proceeded in the non-vacuum environment, which greatly simplifies tool construction and greatly shorten process times. However, one key issue in non-vacuum environment is air bubble formation problem. In this paper, numerical analysis of bubble defect of UV NIL is performed. Fluent, flow analysis focused program was utilized and VOF (Volume of Fluid) skill was applied. For various resist-substrate and resist-mold angles, effects of velocity inlet and residual layer thickness of resist on bubble defect formation were investigated. The numerical analyses show that the increases of velocity inlet and residual layer thickness can cause the bubble defect formation, however the decreases of velocity inlet and residual layer thickness take no difference in the bubble defect formation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.30-33
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• 1992

This thesis was investigated on ion-induced characteristics in a-$Se_{75}Ge_{25}$ positive and negative resists for focused-ion-beam microlithogaphy. The exposed a-$Se_{75}Ge_{25}$ inorganic thin film shows an increase in optical absorption after exposure to~$10_{16}$ dose of Ga+. The observed shift in the absorption edge toward longer wavelengths is consistent with that in films exposed to band-gap photons(~$10^{21}$photons/cm2). This result may be related with microstructural rearrangements with in the short range of SeGe network. Due to changes in the short range order, the chemical bonding may be affected, which results in increased chemical dissolution in ion-induced film. Also, this resist exhibits good thermal stability because of its high Tg(~$220^{\circ}C$). When focused ion beams are used for direct exposure of resist over a substrate, unwanted implantation of the substrate may be an issue. A possible way to avoid this is to match the thickness of the resist to the range of ions in the resist. Thin aspect is currently under investigation.

• Journal of Fashion Business
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• v.19 no.2
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• pp.23-35
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• 2015

In this study, the effect of shrink-resist treatment agent on the wool finishing, specifically anti-felting of wool product was studied. We aimed at providing preliminary data leading to the diversification of high-value added fashionable wool product. Two type of wool fabrics, dense and sheer, were employed. The fabric specimens were treated with solutions of shrink-resist treatment agent with wet pick-up rate 110%, 130%, and 150%, respectively, by using a padding mangle. The solution treated fabric specimens were then dried at room temperature first, at $90^{\circ}C$ for 15 minutes in a drying oven, and finally cured at $130^{\circ}C$ for 3 minutes. Cured wool fabric specimens were then subjected to a felting process. The physical and mechanical properties, including shrinkage rate along warp/filling direction, thickness at specified measurement pressure, drape stiffness, and air-permeability, were analyzed. After felting process, the shrinkage rates of wool fabric specimens, treated with shrink-resist treatment agent, were lower than those of control wool fabric specimens. The stiffness values of wool fabric specimens measured by using Flexometer were increased.

• Korean Journal of Heritage: History & Science
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• v.52 no.2
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• pp.254-267
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• 2019

Clamp resist dyeing is a resist dyeing technique in which a fabric is sandwiched between two or more pieces of woodcarving and then a pattern is expressed by dyeing. Records from nine years of King Heungdeok's reign during the Unified Silla dynasty show that the use of the clamp resist dyeing technique was banned for different garments. This was only for garments of YOOKDUPUMNYEO (六頭品女) or OHDUPUMNYEO (五頭品女). Given this, it can be assumed that clamp resisted fabrics were widely used, and the technique had been established during the Unified Silla dynasty or before. However, only the term can be found in the records. Neither its definition nor how this technique was used is explained. Also, it is difficult to assume the types and features of clamp resist dyeing due to a lack of materials. A small number of relics from the Goryeo dynasty still remain, though. Craft techniques have developed through international exchanges and have changed according to respective nations' circumstances including politics, economics, society, and culture. Hence, this research analyzed documents and relics from China and Japan, two countries neighboring the Republic of Korea, and studied the different types and features of clamp resist dyeing techniques. Clamp resist dyeing techniques were divided into monochromatic or multichromatic according to the number of colors that represented patterns, rather than according to the respective nations' features. They were also classified into mono, bilateral symmetry, or vertical-bilateral symmetry according to the structure of the patterns. Through the study of examples of inherited or reproduced dyeing techniques in China and Japan, it was confirmed that different engraving techniques, including relief, openwork, intaglio fit for the feature of a pattern and the number of colors, were applied in order to vividly represent patterns on fabric. Using small flower pattern clamp resist dyed fine tabby in Amitabha of 1302, the only relic showing its patterns and colors in Korea, as the experiment subject, this research successfully reproduced a clamp resist dyeing technique through a successful experiment based on the basic materials from the dyeing technique case study. Due to the significance of the experiment on a clamp resist dyeing technique that stopped its transmission and shows the features of the technique, this study is expected to be a basic resource that can be used for future reproductions of multichromatic clamp resist dyeing techniques. Also, it is expected to be helpful in widening and recreating the world of Korean pattern dyeing with modern dyeing techniques.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.922-925
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• 1999

The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

• Transactions of the Society of Information Storage Systems
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• v.3 no.1
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• pp.43-46
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• 2007

The fabrication of metal nanostructures by a combination of atomic force microscopy nanomachining on a thin polymer resist, metal coating and lift-off is reported. Nanodots with sizes and nanowires with widths ranging between 50 and 100 nm have been successfully created. The present work exemplifies the feasibility and effectiveness of using a single-layer resist in comparison with a two-layer resist. In addition, the localized surface plasmon resonance peaks of the metal nanostructures have been measured and the selective growths of zinc oxide nanowires on the metal nanostructures are demonstrated.

• Advances in nano research
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• v.1 no.2
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• pp.105-109
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• 2013

We report dry thermal development of negative resist polystyrene with low molecular weight. When developed on a hotplate at $350^{\circ}C$ for 30 min, polystyrene showed reasonable high contrast and resolution (30 nm half-pitch), but low sensitivity. Resist sensitivity was greatly improved at lower development temperatures, though at the cost of reduced contrast. In addition, we observed the thickness reduction due to thermal development was higher for larger remaining film thickness, implying the thermal development process is not just a surface process and the more volatile chains below the top surface may diffuse to the surface and get evaporated.