• Fibers and Polymers
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• v.7 no.2
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• pp.117-122
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• 2006

The dye-resist effect and leveling properties of hetero-mulifunctional dye-resist agents in acid dyeing of wool were investigated. The dye-resist agent with dichlorotriazinyl group achieved better resist effectiveness than those with monochlo-rotriazinyl group. The resist effectiveness was improved by increasing the number of sulfonate group in dye-resist agents. Also, the resist agents with more sulfonate groups showed better dye-assist effectivness, attributable to the increased electrostatic attraction between dye-resist agents and the cationic dye. However, the leveling properties of dye-resist agents decreased with the number of sulfonate groups in the molecule.

• Textile Coloration and Finishing
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• v.19 no.5
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• pp.8-16
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• 2007

The dye-resist effect of reactive dye-resist agents in reactive dyeing of silk was investigated. The dichlorotriazine-based dye-resists achieved a higher effectiveness than others since they make a charge barrier of diffusion in the silk fiber periphery due to high reactivity of dichlorotriazine group. Similarly, in the case of hetero-multifunctional dye-resist agent, the dye-resist agent containing both a dichlorotriazine and an ${\alpha}$-bromoacrylamide reactive groups achieved better resist effectiveness than those containing both a monochlorotriazine and an ${\alpha}$-bromoacrylamide groups. Also, their resist effectiveness was improved by increasing the number of sulfonate groups in the dye-resist agents and the number of reactive groups in the reactive dyes applied to them.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.315-318
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• 1988

THE STUDY ABOUT CHARACTERISTICS OF PHOTO RESIST ITSELF (MINIMUM RESOLUTION, DEPTH OF FOCUS MARGIN AND CRITICAL DIMENSION CONTROL LATITUDE) WAS DONE AND REPORTED. THREE TYPES OF PHOTO RESISTS WERE TESTED. THE FIRST IS THE LOW MOLECULAR WEIGHT PHOTO-RESIST SHOWING THE NARROW DISTRIBUTION OF MOLECULAR WEIGHT (LOW MOLECULAR WEIGHT CONTROL TYPE), THE SECOND IS A PHOTO-RESIST CONTAINING THE INNER CONTRAST ENCHANCEMENT MATERIAL (INNER CEM TYPE) AND THE THIRD IS A NORMAL PHOTO-RESIST (HIGH MOLECULAR WEIGHT TYPE). THE INNER CEM TYPE AND THE LOW MOLECULAR WEIGHT CONTROL TYPE PHOTO-RESIST ARE MORE IMPROVED PHOTO-RESISTS. IT PROVED THAT THE MINIMUM RESOLUTION WAS IMPROVED BY 0.2 - 0.3 um, THE DEPTH OF FOCUS MARGIN WAS IMPROVED BY 0.8 - 1.2 um AND THE C.D. CONTROL LATITUIDE WAS IMPROVED.

• Textile Coloration and Finishing
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• v.8 no.1
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• pp.8-14
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• 1996

In resist-discharge printing of cotton fabrics with reactive/reactive dyes the effects of both resist agents, benzaldehyde sodium bisulfite(BASB) and glyoxal sodium bisulfite (GSB), and Rongalite on the resist-discharge behaviors of C.I. Reactive Black 5(B1-5), which is disazo type and has two vinylsulfone groups, were investigated. It was confirmed that BASB and GSB were effective resist agents, and about 4% of BASB or about 6% of GSB was proper to obtain successful white or colored resist-discharge results. It was thought that the good resist-dischargeability of BASB was due to the hydrophobicity of bezene in BASB, and also that of GSB resulted from the structural effects caused by two hydroxy groups in GSB and the ease of washing of unactivated reactive dye. Only 5% Rongalite without any resist agents showed good resist-discharge result, but 1~3% Rongalite with 4% BASB brought about the stain of cotton fabric by reddish monoazo products produced by insufficient cleavage of two azo groups in Bl-5.

• The Research Journal of the Costume Culture
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• v.28 no.5
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• pp.607-620
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• 2020

The aim of this study is to define the new expressive techniques for multicolored clamp resist (hyuphill) dyeing, based on empirical verification on relics that are estimated to be dyed by the exchange of more than two wood blocks: a previously undiscovered technique. Clamp resist dyeing (assumed to be made by exchanging wood blocks) have uneven resist printing lines or cloudy gradation. These are reproduced as follows: first, they have uneven contour lines, particularly with the color blue. It is possible to exchange wood blocks separately on patterns with uneven resist printing lines, and it has been verified that the exchange of wood blocks makes these irregular resist printing lines. It has also been verified that exchanging the wood blocks according to the gradation (to emphasize the cubic effect on the patterns) yields clamp resist dyeing with no resist printing lines but with cloudy gradations that have accented borders. This study provides basic information that enables methods of multicolored clamp resist dyeing through wood block exchange to be deduced (something that has not been attempted for a long time). Thus, the revival of the modern Korean dyeing culture based on the conservation and perseverance of the traditional dyeing techniques can be achieved.

• Journal of Information Display
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• v.10 no.4
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• pp.202-205
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• 2009

An automated circuit repair system was developed for enhancing the yield of nondefective liquid crystal panels, focusing on the resist patterns on the circuit material layer of thin-film transistor (TFT) substrates prior to etching. The developed system has an advantage over the parallel conventional system: In the former, the repair conditions depend on the type of resist whereas in the latter, the repair parameters must be fine-tuned for each circuit material. The developed system consists of a resist pattern defect inspection system and a pattern repair system for short and open defects. The repair system performs fine corrections of abnormal areas of the resist pattern. The open-repair system is equipped with a syringe to dispense resist. To maintain a stable resist diameter, a thermal insulator was installed in the syringe system. As a result, the diameter of the dispensed resist became much more stable than when no thermal insulator was used. The resist diameter was kept within the target of $400{\pm}100{\mu}m$. Furthermore, a prototype system was constructed, and using a dummy pattern, it was confirmed that the system worked automatically and correctly.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• Textile Coloration and Finishing
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• v.7 no.3
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• pp.22-30
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• 1995

The effects of agents in padding liquor on the fixation of vinylsulfonyl reactive dye of ground color and on the resist-dischargeability in resist-discharge printing of cotton fabrics with reactive/reactive dyes were investigated. Alkalis, such as sodium bicarbonate, sodium carbonate, sodium acetate and trichloro sodium acetate, were used to fix the dye for ground color on cotton fabrics. Sodium bicarbonate and sodium carbonate showed a good fixation of the dye for ground color, but they were ineffective to the white and the colored resistdsichargeabilities, which were caused by the fast fixation of the dye for ground color before its reaction with resist agent in printing paste. Therefore these are not suitable for the agent to fix the dyes for ground color because they deteriorate the resist-dischargeability. In case of sodium acetate, as the fixation yield of the dye for ground color was remarkably low. and the white resistdischargeability was not good, it had better not be used for the agent to fix the dye for ground color. However, the addition of sodium trichloroacetate to padding liquor gave a very good fixation yield of ground color, and showed an excellent resist-dischargeability. The effects of acetic acid in padding liquor on the fixation of the dye for ground color and on the resist-dischargeability were studied in case of immediate printing of resist-discharge pastes after padding and drying and in cases of printing after 1∼3 day-storage of padded goods. By the addition of 2% of 48% acetic acid aqueous solution to padding liquor, the white and the colored resist-dischargeabilities were improved and the fixation of the dye for ground color was good without any troubles. Especially, when the padded goods were stored for 2 or 3 days and printed with resist-discharge printing pastes, its addition was very effective on the resist-dischargeability.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.155-160
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• 1998

It is necessary to use Arc layer and DUV resist to define 0.25 $\mu \textrm{m}$ line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries; $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using $Cl_2/O_2$ gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using $Cl_2$/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.

• Journal of the Optical Society of Korea
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• v.19 no.1
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• pp.80-83
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• 2015

White reflective patterns are very difficult to fabricate, due to the scattering and reflection of light, especially when the pattern size goes down to micron size. A reflective white barrier structure of height $50{\mu}m$ and width $80{\mu}m$ was fabricated using dry-film resist as an intermediate reverse pattern. The reverse dry-film resist pattern was coated with an $SiO_2$ layer by sputtering, to protect the resist from chemical attack by the radical molecules in UV white resin. The UV white resin was applied on the dry-film resist pattern and then cured with ultraviolet light. The fine three-dimensional reflective patterns were finished by removing the dry-film resist.