• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.5
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• pp.486-489
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• 2016

A horn antenna with corrugation structure and a PTFE(Polytetrafluoroethylene) teflon(relative permittivity=2.1) dielectric lens for good impedance matching characteristic and high gain performance is proposed in this paper. The proposed antenna shows measured return loss below -25 dB over the operating X band(8~12 GHz), the peak gain of 22.3 dBi at the center frequency(10 GHz) and has overall size of $110mm{\times}110mm{\times}135mm$. Considering the performance of the proposed antenna, it is suitable for being inserted in a radar level transmitters, particularly for gas tanks on vessels or off-shore plants containing gas with very low reflectivity and relative permittivity such as LNG or LPG.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.120-126
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• 1996

In the present study, we have studied on the characteristics of BST thin films with various Ba/Sr ratios by using sol-gel method. Barium-acetate, strontium-acetate and titanium isopropoxide are used as starting materials to fabricate BST thin films by sol-gel method. The fabrication conditions are estabilished through the TG-dT analyses and XRD measurements. BST thin films with the Ba/Sr ratios of 90/10, 70/30, 50/50 and 30/70 were deposited on the Pt/Ta/SiO$_{2}$Si substrate with the estabilished sol-gel process, and their characteristics were examined. The relative permittivity and the leakage current density at 5V vary from 287 to 395 and from 2.3 to 220${\mu}$A/cm$^{2}$, respectively, with various Ba/Sr ratio. Among the films investigatd in this research, BST (70/30) thin film shows the best relative permittivity and dielectric loss of BST (70/30) thin film are 395 and 0.045, respectively and the leakage current density at 5V is 2.3${\mu}$A/cm$^{2}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.724-727
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• 2009

We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1432-1433
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• 2006

$Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were fabrication by sol-gel method. Sintering temperature must be suited to the LTCC technology. Structure and dielectric properties were investigated for effect of $Li_{2}CO_3$ dopants at BST. Structure of $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were dense and homogeneous with almost no pore. Relative permittivity was decreased and dielectric loss was increased with increasing $Li_{2}CO_3$ doping rations. In the case of the 3wt% $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics sintered at $900^{\circ}C$, relative permittivity and dielectric loss were 907 and 0.003 at 100 kHz.

• Transactions of Materials Processing
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• v.32 no.4
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• pp.191-198
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• 2023

We examined the martensitic transformation kinetics for metastable stainless steel during electrochemical polishing (EP) using different types of electrolytes. Martensite fraction measured with EBSD showed that the electrolyte with high relative permittivity exhibited comparably higher levels of martensitic transformation. The amount of charge build-up on the specimen surface during EP with different types of electrolytes was calculated using COMSOL multiphysics simulations to understand these phase transformation characteristics. The effect of charge build-up-induced stress was analyzed using previously published first-principles calculations. We discovered that the electrolyte with high relative permittivity accumulated a greater amount of charge build-up, resulting in a stronger driving force for stress-induced martensitic transformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.1-5
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• 2001

This paper describes the electrical characteristics of Nomex paper employed as an insulating material of distribution transformers. The relative permittivities(dielectric constants) and $tan{\delta}$(dielectric dissipation factors) were measured as a dielectric characteristic and the partial discharge inception voltages(PDIVs) and breakdown voltages were also measured as an electrical strength characteristic of Nomex paper. As a result, the permittivity and $tan{\delta}$ of Nomex paper showed temperature and frequency dependency. Especially, the permittivity of 0.18mm Nomex paper was 2.4 according to the ASTM condition. And the PDIVs and breakdown voltages were, almost linearly increased with the thickness of Nomex paper and its electrical strength was better than conventional kraft paper.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1803-1805
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• 1999

The thermal expansion coefficient of the titania-fused silica glass$(TiO_2-SiO_2)$ called KLR-1.1 is known to $0{\pm}0.03$ ppm/K, while that of normal fused-silica glasses is about +0.5 ppm/K at room temperature. To analysis the dielectric properties of the KLR-1.1, the sample with diameter of 30 mm and thinkness of 1 mm is covered with gold film. Its relative permittivity and dissipation factor of KLR-1.1 is evaluated to $4.011{\pm}0.012(1\sigma)$ and $(4.86{\pm}0.02){\times}10^{-4}(1{\sigma})$ at 1 kHz respectively. The measurement techniques used and results are more discussed in this paper.

• Journal of electromagnetic engineering and science
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• v.12 no.1
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• pp.20-25
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• 2012

In this paper, the EM wave absorber for ETC system was designed and fabricated. We fabricated several samples in different composition ratios of flaked sendust and CPE(Chlorinated Polyethylene). Absorption abilities were simulated in accordance with different thicknesses of the prepared absorbers and changed complex relative permittivity and permeability according to composition ratio. The optimized mixing ratio of flaked sendust and CPE was found as 60 : 40 wt.% by experiments and simulation. Then the EM wave absorber was fabricated and tested using the simulated data. As a result, the developed EM wave absorber has the thickness of 2.75 mm and absorption ability was 22.5 dB in the case of normal incidence at 5.8 GHz. Therefore, it was confirmed that the newly developed absorber can be used for ETC system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.467-469
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• 2001

KAM200 which can be used electroluminescence binder is cyano material. In this study, we have fabricated KAM200 thin film by Spin-Coating method. And we have studied the electical properties of KAM200 thin films. In the I-V characteristics, the current decreases as the voltage overflow definite voltage immediately. And that definite voltage depend on thickness of KAM200 material. In the case of thickness is 1.9[$\mu\textrm{m}$], definite voltage is 7[V]. And that's electrical field 3.86[MV/m]. The dielectric properties of KAM200 thin film is investigated by measuring dielectric dispersion and absorption. KAM200's Relative dielectric constant is 10.25, and it has high permittivity compared with different materials.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1661-1663
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• 2001

This paper describes the dielectric characteristics of composite dielectric film for pulsed power capacitors. The relative electric permittivity(${\varepsilon}'$) and the dielectric dissipation factor(tan$\delta$) were measured for polypropylene (PP) membranes, kraft paper for capacitors(CP) and composite dielectric films(PP+CP), respectively, in a frequency range of $1{\sim}10^4$[Hz], and in temperatures ranging from -50[$^{\circ}C$] to 110[$^{\circ}C$]. As a result, the variation of the electric permittivity was observed similarly for PP and CP. Dielectric dispersion was observed in frequency domain in PP, CP and composite dielectric films.