• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.83-91
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• 2015

The redox reaction $M^{(x+n)+}+\frac{n}{2}O^{-2}{\rightleftarrows}M^{x+}+\frac{n}{4}O_2$ of multivalent ions in glass melts influences the melting process and final properties of the glass including the fining (removal of bubbles), infrared absorption and homogenization of melts, reaction between metal electrodes and melts or refractory and melts, and transmission and color of glass. In this review paper, the redox behaviors that occur frequently in the glass production process are introduced and the square wave voltammetry (SWV) is described in detail as an in situ method of examining the redox behavior of multivalent ions in the melt state. Finally, some voltammetry results for LCD glass melts are reviewed from the practical viewpoint of SWV.

• Journal of Astronomy and Space Sciences
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• v.40 no.3
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• pp.93-100
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• 2023

A study of uncertainty analysis was conducted on four key thermophysical properties of molten Platinum using a noncontacting levitation technique. More specifically, this work demonstrates a detailed reporting of the uncertainties associated with the density, volumetric thermal expansion coefficient, surface tension and viscosity measurements at higher temperatures for a widely used refractory metal, Platinum using electrostatic levitation (ESL). The microgravity experiments were conducted using JAXA's Electrostatic Levitation Furnace (ELF) facility on the International Space Station and the terrestrial experiments were conducted using NASA's Marshal Space Flight Center's ESL facility. The performance of these two facilities were then quantified based on the measurement precision and accuracy using the metrological International Standards Organization's Guide to the Expression of Uncertainty Measurement (GUM) principles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.34-41
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• 1984

MOEN/MO double layer which is to be used It)r the RMOS (refractory metal oxide semiconductor) gate material has been fabricated by means of low temperature reactive sputtering in N2 and Ar mixture. Good Mo2N film was obtained in the volumetric mixture of Ar:N2=95:5. The sheet resistance of the fabricated Mo7N film was about 1.20 - 1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film, and this would enable to improve the operational speed of devices fabricated with this material. When PSG (phosphorus silicate glass) was used as impurity diffusion source for the source and drain of the RMOSFET in the N2 atmosphere at about 110$0^{\circ}C$, the Mo2N was reduced to Mo resulting in much smaller sheet resistance of about 0.38 ohm/square. The threshold voltage of the RMOSFET fabricated in our experiment was - 1.5 V, and both depletion and enhancement mode RMOSFETs could be obtained.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.115-118
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• 2009

The use of dolomite refractories has increased during the past several years in the manufacturing of clean steel during the stainless steelmaking process. However, at the same time, the use of dolomite refractories has led to what is known as the skull formation. In the present work, to understand the skull formation, the wetting characteristics of dolomite substrates by liquid Fe-19wt%Cr-10wt%Ni alloys in various oxygen partial pressures were initially investigated at 1753K using the sessile drop technique. For comparison, the wetting characteristics of alumina substrates were investigated with the same technique. It was found that the wetting index, (1+$cos{\theta}$), of dolomite is approximately 40% higher compared to those of alumina. In addition, the oxygen partial pressure to generate the surface oxide, which may capture the liquid metal on the refractory surface, for dolomite is much lower than that for alumina. From this study, it was concluded that the use of dolomite is much more closely associated with the skull formation compared to the use of alumina due to the stronger wettability and the surface oxide formation at a lower oxygen partial pressure of dolomite.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.78-82
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• 2000

Although alumina aggregates have been used as refractory aggregates due to the improved mechanical properties of refractories as a result of the low contraction of alumina aggregates, the aggregates have a difficulty in fabrication due to its low sinterability. Two types of alumina aggregates and a fused alumina aggregate containing transient liquid forming additives are prepared to investigate the sintering characteristics of aggregates. $Al_2O_3$rich composition in the $Al_2O_3$-MgO-$SiO_2$(-$TiO_2$) system is chosen for the transient liquid phase sintering and the final recrystallized bonding phase between grains inside the fused alumina aggregates is found to be a needle-like mullite phase. The flexural strength of alumina bars, reaction-bonded using the paste having a composition of $Al_2O_3$-MgO-$SiO_2$-$TiO_2$, is about 78 MPa, which is one half value of that of pure alumina.

• Journal of Powder Materials
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• v.14 no.4
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• pp.221-229
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• 2007

이상에서 살펴본 바와 같이, 내열재료들은 고밀도를 이용하여 비행하는 물체의 운동에너지를 극대화 시킬 수 있기 때문에 군사적으로 각종 무기체계의 성능 향상에 매우 중요하다. 또한 유도 무기 및 항공기의 경우 고온, 고압 등의 환경에서 운용되기 때문에, 이러한 조건에서 견딜 수 있는 소재 개발이 필수적이다. 따라서 무기 선진국에서는 고밀도 재료인 텅스텐, 몰리브덴, 탄탈륨, 텅스텐-구리 감손우라늄을 활용하기 위한 연구를 활발하게 진행하고 있다. 이중, 텅스텐, 몰리브덴, 텅스텐-구리 라이너에 관한 연구는 괄목할 만한 연구 성과를 거두고 있다. 이러한 연구성과는 기존 탄의 관통 성능을 크게 증가시켜, 이에 대응하고자 하는 방어 체계 연구자들을 바쁘게 할 것으로 판단된다. 한편 내열 금속의 경우, 초고온 및 고압과 같은 극한 환경에서의 고온 강도 및 내삭마성이 우수하기 때문에, 각종 유도 무기 체계의 구성 부품, 즉 터빈, 밸브, 노즐, 제트 베인 등에 적용되고 있으나 대부분의 내열 재료들은 제조 방법이 까다롭고, 가공성이 나쁘며, 고가라는 단점들이 있어 이를 극복하는 연구들이 현재 진행 중에 있다.

• Journal of Power System Engineering
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• v.18 no.6
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• pp.133-139
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• 2014

In this research, the photocatalytic degradation of benzothiophene in $TiO_2$ aqueous suspension has been studied. $TiO_2$ photocatalysts are prepared by a sol-gel method. The dominant anatase-structure on $TiO_2$ particles is observed after calcining the $TiO_2$ gel at $500^{\circ}C$ for 1hr. Photocatalysts with various transition metals (Nd, Pd and Pt) loading are tested to evaluate the effect of transition metal impurities on photodegradation. The photocatalytic degradation in most cases follows first-order kinetics. The maximum photodegradation efficiency is obtained with $TiO_2$ dosage of 0.4g/L. The photodegradation efficiency with Pt-$TiO_2$ is higher than pure $TiO_2$ powder. The optimal content value of Pt is 0.5wt.%. Also we investigate the applicability of $H_2O_2$ to increase the efficiency of the $TiO_2$ photocatalytic degradation of benzothiophene. The optimal concentration of $H_2O_2$ is 0.05. The effect of pH is investigated; we obtain the maximum photodegradation efficiency at pH 9. Hydroxy-benzothiophenes and dihydroxy-benzothiophenes are identified as reaction intermediates. It is proposed that benzothiophene is oxidized by OH radical to sequentially form hydroxyl-benzothiophenes, dihydroxybenzothiophenes, and benzothiophenedione.

• Resources Recycling
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• v.18 no.4
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• pp.14-23
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• 2009

In terms of resources recycling and resolving waste disposal problems, it is very important to recover precious metals like Au, Ag and Pd and valuable metals like Cu, Sn and Ni from the scraps of waste electrical and electronic equipment(WEEE) that consists of detective electrical and electronic parts discarded during manufacturing electrical and electronic equipments and waste electrical and electronic parts generated during disassembling them. In general, the scraps of WEEE are composed of various metals and alloys as well as refractory oxides and plastic components. Precious and valuable metals from the scraps of WEEE can be recovered by gas-phase-volatilization, hydrometallurgical, or pyrometallurgical processes. However, the gas-phase-volatilization and hydrometallurgical processes have been suggested but not yet commercialized. At the present time, most of the commercial plants for recovering precious and valuable metals from the scraps of WEEE adopt pyrometallurgical processes. Therefore, in this paper, the technical and environmental aspects on the important pyrometallurgical processes through literature survey are reviewed, and the scale-up result of a new pyrometallurgical process for recovering the precious and valuable metals contained in the scraps of WEEE using waste copper slag is presented.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.217-223
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• 2005

Thermal, electrical and mechanical properties of high purity niobium and tantalum refractory rare metals were investigated tn evaluate the physical purity. Higher purity niobium and tantalum metals showed lower hardness due to smaller solution hardening effect. Temperature dependence of electrical resistivity showed a typical metallic behavior. Remarkable decrease in electrical resistivity was observed for a high purity specimen at low temperature. However, thermal conductivity increased for a high purity specimen, and abrupt increase in thermal conductivity was observed at very low temperature, indicating typical temperature dependence of thermal conductivity for high purity metals. It can be known that reduction of electron-phonon scattering leads to increase in thermal conductivity of high purity niobium and tantalum metals at low temperature.