• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.301-304
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• 2007

다결정 태양전지의 원료인 폴리실리콘을 생산하는 방법 중 하나인 지멘스 방법에서 사용되는 실리콘 코어로드를 금속 계열의 코어로드로 대체하기 위한 연구를 진행하였다. 본 연구에서는 실리콘 코어로드의 대체물질 후보로서 고융점 금속인 텅스텐, 탄탈륨, 몰리브덴을 선택하였고, co-sputtering system을 이용하여 다성분계의 박막을 실리콘 기판에 증착시켜 $800^{cdot}C$에서 $1000^{cdot}C$의 고온에서 열처리 후 박막의 형상변화 및 확산정도를 관찰하였다. 열처리 온도에 따른 박막의 형상 및 확산 정도를 관찰하기 위하여 Scanning electron microscopy (SEM), X-ray diffractometer(XRD), transmission electron microscopy(TEM), auger electron spectroscopy(AES)가 사용되었다.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.191-193
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• 2005

This study has investigated the effects of the etching method of a Ti substrate for a metal oxide electrode on the electrochemical characteristics of the electrode. The HCl etching develops a fine and homogeneous roughness on the Ti substrate. Fabrication and material properties of the catalytic oxide electrode, which is known to be so effective to destruct refractory organics in aqueous waste, were studied. A method to enhance the fabrication reproducibility of the oxide electrode was tested for Ru, Zr, Sn oxide on the Ti substrate using SEM, XRD, Cyclic voltammetry.

• Journal of Korea Foundry Society
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• v.17 no.1
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• pp.85-92
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• 1997

There has been a considerable interest to develop the silicide alloys as high temperature structural materials because of their excellent high temperature stability and strength, however, their lack of room temperature ductility and toughness was a main obstacle for the application. In order to improve ductility while maintaining good high temperature properties, possible refractory metal-silicide eutectic alloys composed of fine two phases were prepared by VAR(Vacuum Arc Remelting). Three silicide alloys, $Nb-Nb_3Si$, $Ti-Ti_5Si_3$, $V-V_3Si$, were selected as prospecting silicide eutectics and those high temperature characteristics were evaluated by high temperature compression test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.43-45
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• 1988

Four W/Cu system(60wt%W-40wt%Cu, -0.lwt%Ni, -0.5wt%Ni, -0.lwt%C) and four WC/Cu system(60wt%WC-40wt%Cu, -0.lwt%Ni, -0.5wt%Ni, 0.lwt%C) electrical contacts were prepared by a press-sinter-infiltration process to compare with their properties. Hardness and electrical conductivity are proportional to the refractory metal(W or WC) properties and showed the effect of additives. Arc erosion trend of switch test is changed by current level. High currant test at 1kA showed a different crack formation pattern and erosion mode between W/Cu system and WC/Cu system contacts.

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.324-332
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• 1995

전자빔 증착법을 사용하여 Ti과 Co를 Si(100) 단결정, 다결정 Si 및 Si$O_{2}$기판에 증착한 후 90$0^{\circ}C$에서 20초 급속 열처리하여, Co/Ti 이중박막으로부터의 실리사이드화 반응을 조사하였다. 단결정 시편의 경우 Ti의 두께를 5~6mm로 최소화함으로서 두께가 균일하고 기판과의 계면이 평탄하며 비저항이 낮고 열적 안정성이 높은 Co$Si_{2}$ 에피박막을 형성할 수 있었다. 그러나 다결정 시편에는 두께와 계면이 불균일하고 열적으로도 불안정한 다결정의 Co$Si_{2}$와 그 위에 두개의 Co-Ti-Si혼합층이 형성되었다. 한편 Si$O_{2}$ 우에 증착된 Co/Ti은 열처리를 하여도 확산하지 않고 그대로 남아 있어서, Co/Ti 이중박막의 Si$O_{2}$와의 반응성이 미약함을 보여 주었다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.946-947
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• 2006

Driven by the unavailibility of commercial test equipment for tensile and creep testing at temperatures up to $3000^{\circ}C$ a measuring system has been developed and constructed at the University of Applied Sciences, Jena. These temperatures are reached with precision by heating samples directly by electric current. Contact-less strain measurements are carried out with image processing software utilizing a CCD camera system. This paper covers results of creep tests which have been conducted on TZM sheet material (thickness 2 mm) in different heat-treatment conditions in the temperature range between $1200^{\circ}C$ and $1600^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.451-457
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• 2006

The solid solutions of ${\alpha}-Si_3N_4$, i.e. ${\alpha}$-sialons, are represented by a general formula of $M_x(Si,Al)_{12}(O,N)_{16}$, in which metal ions (M) dissolve into interstitial sites to stabilize the structure. Processing methods for the fabrication of ${\alpha}/{\beta}$-sialon composites, ${\alpha}-sialon/{\beta}Si_3N_4$ composites, refractory or tough ${\alpha}$-sialon ceramics have been developed to tailor the mechanical properties. Translucent and photoluminescent properties have been investigated recently. A number of applications of ${\alpha}$-sialon ceramics as engineering and optical ceramics are also presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1193-1196
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• 2009

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

• ETRI Journal
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• v.13 no.4
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• pp.88-93
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• 1991

본 연구에서는 게이트의 Schottky 접촉을 먼저 만들고 옴 접촉 공정을 그후에 하는 자기정렬 공정 (self-aligned process) 에서 다이오드의 특성 저하를 막기위하여, 내열성 금속 (refractory metal) 을 사용하여 두께와 온도에 따른 각각의 특성을 알아보았다. 내열성 금속으로는 텅스텐을 사용하였으며, 텅스텐이 게이트 금속인 Au 나 AlGaAs 에 대해 어느정도 확산에 대한 barrier의 역할을 하는 지에 대하여 알아보았다. 전류-전압 측정자료와 Auger 분석을 통하여 옴 접촉조건($480^{\circ}C$)에서 텅스텐의 두께가 30nm 이하에서는 barrier 의 역활이 어려운 것으로 나타났다. 그리고 30~60 nm 사이에서 트랜지스터의 특성에 있어서 많은 변화가 있음을 알 수가 있었으며, 90 nm 이상에서는 $530^{\circ}C$ 이상의 온도에서 Au에 대해 좋은 barrier 의 역활을 할 수 있는 것으로 나타났다.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.83-91
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• 2015

The redox reaction $M^{(x+n)+}+\frac{n}{2}O^{-2}{\rightleftarrows}M^{x+}+\frac{n}{4}O_2$ of multivalent ions in glass melts influences the melting process and final properties of the glass including the fining (removal of bubbles), infrared absorption and homogenization of melts, reaction between metal electrodes and melts or refractory and melts, and transmission and color of glass. In this review paper, the redox behaviors that occur frequently in the glass production process are introduced and the square wave voltammetry (SWV) is described in detail as an in situ method of examining the redox behavior of multivalent ions in the melt state. Finally, some voltammetry results for LCD glass melts are reviewed from the practical viewpoint of SWV.