• Journal of Electrical Engineering and Technology
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• 제7권6호
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• pp.965-970
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• 2012

Structure and optical properties of cadmium sulphide-zinc oxide composite nanorods have been evaluated by suitable characterization techniques. The X-ray diffraction spectrum contains a series of peaks corresponding to reflections from various sets of lattice planes of hexagonal ZnO as well as CdS. The above observation is supported by the Micro-Raman spectroscopy result. The optical reflectance spectra of CdS-ZnO is compared with that of ZnO where we observe an enhanced absorption and hence diminished reflection from CdS-ZnO compared to that from only ZnO. A very small intensity of the visible photoluminescence peak observed at 550 nm proves that the ZnO nanorods have very low concentrations of point defects such as oxygen vacancies and zinc interstitials. The photocurrent in the visible region has been significantly enhanced due to deposition of CdS on the surface of the ZnO nanorods. CdS acts as a visible sensitizer because of its lower band gap compared to ZnO.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.112-113
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• 2006

A stoichiometric mixture for $Cdln_2Te_4$ single crystal was prepared from horizontal electric furnace. The $Cdln_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $Cdln_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $Cdln_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $Cdln_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.4750\;eV\;-\;(7.69{\times}\;10^{-3}\;eV)T^2/(T+2147)$.

• Bulletin of the Korean Chemical Society
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• 제13권2호
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• pp.140-145
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• 1992

The excited state intramolecular proton transfer and physical properties of 7-hydroxyquinoline are studied in various solutions and heterogeneous systems by measuring steady state and time-resolved fluorescence, reflection and NMR spectra. Proton transfer is observed only in protic solvents owing to its requirement of hydrogen-bonded solvent bridge for proton relay transfer. The activation energies of the proton transfer are 2.3 and 5.4 kJ/mol in $CH_3OH$ and in $CH_3OD$, respectively. Dimers of normal molecules are stable in microcrystalline powder form and undergo an extremely fast concerted double proton transfer upon absorption of a photon, consequently forming dimers of tautomer molecules. In the supercage of zeolite NaY, its tautomeric form is stable in the ground state and does not show any proton transfer.

• Current Optics and Photonics
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• 제3권5호
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• pp.401-407
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• 2019

Polymeric optical waveguide devices with Bragg gratings have been investigated, for implementing tunable lasers and wavelength filters used in wavelength-division-multiplexed optical communication systems. Owing to the excellent thermo-optic effect of these polymers, wavelength tuning is possible over a wide range, which is difficult to achieve using other optical materials. In this study the phase-mask technology, which has advantages over the conventional interferometeric method, was introduced to facilitate the fabrication of Bragg gratings in polymeric optical waveguide devices. An optical setup capable of fabricating multiple Bragg gratings simultaneously on a 4-inch silicon wafer was constructed, using a 442-nm laser and phase mask. During fabrication, some of the diffracted light in the phase mask was totally reflected inside the mask, which affected the quality of the Bragg grating adversely, so experiments were conducted to solve this issue. To verify grating uniformity, two types of wavelength-filtering devices were fabricated using the phase-mask lithography, and their reflection and transmission spectra were measured. From the results, we confirmed that the phase-mask method provides good uniformity, and may be applied for mass production of polymer Bragg-grating waveguide devices.

• 지질공학
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• 제28권3호
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• pp.465-473
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• 2018

육상 탄성파자료에 나타나는 일관성 잡음인 그라운드롤을 제거하기 위해 특이값 분해 필터링의 적용성을 살펴보았다. 상관성이 높은 반사에너지가 요구되는 특이값의 계산을 위해 먼저 자동이득제어로 감쇠된 진폭을 보상하고 송수신점의 높이보정 및 풍화대 보정을 실시하여 장파장 시간차이를 제거한 후, 나머지 정적보정으로 단파장 시간차이를 완화시켜 반사면의 수평적인 연속성을 높였다. 특이값 분해 필터링에 적합한 입력인자(최대 주성분)는 공통중간점 자료에 수직시간차 역보정을 수행하여 얻은 공통발파점 자료에 대한 연속 테스트로 결정하였다. 그라운드롤의 시간에 따른 분산이 뚜렷한 현장자료에서 특이값 분해 필터링은 일반적인 기법인 f-k 필터링에 비해 반사신호의 왜곡없이 그라운드롤의 영향을 최소화하면서 주요 반사면들의 연속성을 향상시키는데, 이것은 진폭 빛띠에서 반사파의 낮은 진동수 성분들이 필터링 후에도 보존되었다는 점과 잘 상관되었다. 특히 특이값 분해 필터링을 거친 후 S/N 비를 높일 수 있는 자료처리(송곳곱풀기, 시간변화 빛띠흰색화) 과정을 함께 수행하여 겹쌓기한 결과 저류층을 포함한 주요 반사면들의 향상된 연속성과 분해능을 확인할 수 있었다.

• 센서학회지
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• 제20권4호
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• pp.266-271
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• 2011

A reflection-type fiber-optic pH sensor, which is composed of a pH sol-gel film, plastic optical fibers, a mirror, a light source and a spectrometer, is developed in this study. As pH indicators, a bromthymol blue, a cresol red and a thymol blue are used, and they are immobilized in the sol-gel films. The emitted light from a light source is guided by a fiber-optic Y-coupler and plastic optical fibers to the pH sol-gel film in a pH sensing probe. The pH change in the sensing probe gives rise to a change in the color of the pH sol-gel film, and the optical characteristic of reflected light through the pH sol-gel film is also changed. Therefore, we have measured the spectra of reflected lights, which are changed according to the color variations of the pH sol-gel films with different pH values, by using of a spectrometer. Also, the relationships between the pH values and the intensities of reflected lights are obtained on the basis of the color variations of the pH sol-gel films.

• 항공우주시스템공학회지
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• 제17권1호
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• pp.42-50
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• 2023

본 연구에서는 SrZn_2-xCo_xFe₁₆O₂₇ 화학식을 갖는 육방정 구조의 페라이트 분말을 고상법으로 합성하고 Co-Zn 함량 변화에 따른 전자기파 흡수 특성을 0.1-18 GHz의 주파수 범위와 0 ~ 10 mm 흡수체 두께 범위에서 평가하였다. 흡수체 두께에 따른 전자기파 흡수 특성은 고주파 복소 투자율과 유전율 측정 data로부터 전송선 이론을 기반으로 계산을 통해 반사손실 (RL)을 도출하였으며, 일부 시료에 대해서는 RL 실측정을 통해 계산된 결과와 잘 맞는 것을 보였다. Co의 치환량 (x)에 따라 고주파 복소 투자율 특성이 변화하였으며 이에 따라 전자기파 흡수 주파수 대역의 조절이 가능하였다. 또한 x = 1.0, 1.25, 1.5 시료에서는 매우 우수한 최대 전자기파 흡수 특성 (RL = -70 ~ -50 dB )을 보이며, 90% 이상의 전자기파 에너지를 흡수 (RL ≤ -10 dB) 하는 주파수 밴드 폭 또한 10 GHz 이상으로 광대역 레이다 흡수가 가능함을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• 대한화학회지
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• 제37권6호
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• pp.570-576
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• 1993

물 표면 위의 스테아르산 단분자막을 은을 입힌 유리판에 이전시켜 1층, 3층, 9층 및 21층의 Langmuir-Blodgett(LB) 분자막을 제조하였다. 표면압은 30 mN/m 이었으며 FTIR-RA 분광법을 이용하여 31~72$^{\circ}C$에서 적외선 흡수 스펙트럼을 얻었다. $31^{\circ}C$에서 탄화수소 사슬이 보다 더 수직적인 배향을 나타내고 있었으며 1층의 경우에는 C = O의 피크가 관찰되지 않았다. 이는 은표면에서 이미지 이중극 효과나 금속염을 형성하기 때문으로 본다. 1층과 3층의 경우에는 스테아르산의 트란스 이성질체가 많고 21층의 경우에는 시스형이 많은 것으로 나타났다. 온도 변화에 대한 FTIR-RAS 측정에서 분자층의 수를 증가시키면 사슬의 녹는점이 높아졌으나 1층의 경우는 예외를 나타내는데 이는 1층의 경우 은기판과의 강한 상호작용에 의한 때문이다.