• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• 대한화학회지
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• 제46권1호
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• pp.69-75
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• 2002

조합화학 기법을 이용하여 청색 및 적색 발광을 하는 $Y_{1-x}(P_{1-y-z}Nb_yV_z)O_4:Eu_x$ 형광체를 합성하였다. 합성한 $Y_{1-x}(P_{1-y-z}Nb_yV_z)O_4:Eu_x$ 형광체에 대하여 254 nm 및 147 nm 여기 하에서의 발광 세기에 관한 라이브러리를 완성하였고, 또한 형광체의 결정성과 입자 현상은 XRD와 SEM으로 특성을 관찰하였다. 조합검색 결과로부터 $Y_{1-x}(P_{1-y-z}Nb_yV_z)O_4:Eu_x$ 형광체의 발광특성은 P 자리에 치환되는 금속이온의 영향을 많이 받았다. 결과적으로 $Y_{0.88}PO_4:Eu_{0.12}$ 형광체와 비교하여 발광 효율이 우수한 새로운 $Y_{0.88}(P_{0.92}Nb_{0.05}V_{0.03})O_4:Eu_{0.12}$ 형광체를 찾아내었다.

• 한국재료학회지
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• 제30권8호
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• pp.406-412
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• 2020

SrMoO₄:RE³⁺ (RE=Dy, Sm, Tb, Eu, Dy/Sm) phosphors are prepared by co-precipitation method. The effects of the type and the molar ratio of activator ions on the structural, morphological, and optical properties of the phosphor particles are investigated. X-ray diffraction data reveal that all the phosphors have a tetragonal system with a main (112) diffraction peak. The emission spectra of the SrMoO₄ phosphors doped with several activator ions indicate different multicolor emissions: strong yellow-emitting light at 573 nm for Dy³⁺, red light at 643 nm for Sm³⁺, green light at 545 nm for Tb³⁺, and reddish orange light at 614 nm for Eu³⁺ activator ions. The Dy³⁺ singly-doped SrMoO₄ phosphor shows two dominant emission peaks at 479 and 573 nm corresponding to the ⁴F_9/2→⁶H_15/2 magnetic dipole transition and ⁴F_9/2→⁶H_13/2 electric dipole transition, respectively. For Dy³⁺ and Sm³⁺ doubly-doped SrMoO₄ phosphors, two kinds of emission peaks are observed. The two emission peaks at 479 and 573 nm are attributed to ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions of Dy³⁺ and two emission bands centered at 599 and 643 nm are ascribed to ⁴G_5/2→⁶H_7/2 and ⁴G_5/2→⁶H_9/2 transitions of Sm³⁺. As the concentration of Sm³⁺ increases from 1 to 5 mol%, the intensities of the emission bands of Dy³⁺ gradually decrease; those of Sm³⁺ slowly increase and reach maxima at 5 mol% of Sm³⁺ ions, and then rapidly decrease with increasing molar ratio of Sm³⁺ ions due to the concentration quenching effect. Fluorescent security inks based on as-prepared phosphors are synthesized and designed to demonstrate an anti-counterfeiting application.

• Current Optics and Photonics
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• 제3권6호
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• pp.590-596
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• 2019

To improve the color gamut of a liquid-crystal display (LCD), we propose a bandpass filter that is added to the backlight unit to optimize the backlight spectrum. The bandpass filter can only transmit red, green and blue light in the visible range, while reflecting the unwanted light. We study the optical properties of the bandpass filter using the transfer-matrix method, and the effect of the bandpass filter on the color gamuts of LCDs is also investigated. When a bandpass filter based on a 5-layer configuration comprising low and high refractive indices ((HL)²H) is used in phosphor-converted white-light-emitting diode (pc-WLED), K₂SiF₆:Mn⁴⁺ (KSF-LED), and quantum-dot (QD) backlights, the color gamuts of the LCDs improve from 72% to 95.3% of NTSC, from 92% to 106.7% of NTSC, and from 104.3% to 112.2% of NTSC respectively. When the incident angle of light increases to 30°, the color gamuts of LCDs with pc-WLED and KSF-LED backlights decrease by 2.9% and 1% respectively. For the QD backlight, the color gamut almost does not change. When the (HL)²H structure is coated on the diffusion film, the color gamut can be improved to 92.6% of NTSC (pc-WLED), 105.6% of NTSC (KSF-LED), and 111.9% of NTSC (QD). The diffusion film has no obvious effect on the color gamut. The results have an important potential application in wide-color-gamut LCDs.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.86-90
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• 2017

$Tb^{3+}$ or $Eu^{3+}$ or $Ce^{3+}$-doped $CaYAlO_4$ phosphor were synthesized by solid-state method. $CaYAlO_4:Tb^{3+}$ is shown that the $Tb^{3+}$-doping concentration has a significant effect on the $^5D_4/^5D_3{\rightarrow}7F_J$ (J=6,...,0) emission intensity of $Tb^{3+}$. The $CaYAlO_4:Tb^{3+}$ phosphors show tunable photoluminescence from blue to yellow with the change of doping concentration of $Tb^{3+}$ ions. The $CaYAlO_4:Eu^{3+}$ phosphors exhibit a red-orange emission of $Eu^{3+}$ corresponding to $^5D_0$, $_{1,2}{\rightarrow}^7F_J$ (J=4,...,0) transitions. The $CaYAlO_4:Ce^{3+}$ phosphors show a blue emission due to $Ce^{3+}$ ions transitions from the 5d excited state to the $^2F_{5/2}$ and $^2F_{7/2}$ ground states. The decay time of $CaYAlO_4:Tb^{3+}$ phosphors decrease from 1.33 ms to 0.97 ms as $Tb^{3+}$ concentration increases from 0.1 mol% to 7 mol%. The decay time of $CaYAlO_4:Eu^{3+}$ phosphors increase from 0.94 ms to 1.17 ms as $Eu^{3+}$ concentration increases from 1 mol% to 9 mol%.

• 한국표면공학회지
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• 제53권4호
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• pp.131-137
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• 2020

A series of Dy³⁺, Sm³⁺, and Dy³⁺/Sm³⁺ doped Gd₂WO₆ phosphors were synthesized by the conventional solid-state reaction. The X-ray diffraction patterns revealed that all of the diffraction peaks could be attributed to the monoclinic Gd₂WO₆ crystal structure, irrespective of the type and the concentration of activator ions. The photoluminescence (PL) excitation spectra of Dy³⁺-doped Gd₂WO₆ phosphors contained an intense charge transfer band centered at 302 nm in the range of 240-340 nm and two weak peaks at 351 and 386 nm. Under an excitation wavelength of 302 nm, the PL emission spectra consisted of two strong blue and yellow bands centered at 482 nm and 577 nm. The PL emission spectra of the Sm³⁺-doped Gd₂WO₆ phosphors had a series of three peaks centered at 568 nm, 613 nm, and 649 nm, corresponding to the ⁶G_5/2 → ⁶H_5/2, ⁶G_5/2 → ⁶H_9/2, and ⁶G_5/2 → ⁶H_11/2 transitions of Sm³⁺, respectively. The PL emission spectra of the Dy³⁺- and Sm³⁺-codoped Gd₂WO₆ phosphors showed the blue and yellow emission lines originating from the ⁴F_9/2 → ⁶H_15/2 and ⁴F_9/2 → ⁴H_13/2 transitions of Dy³⁺ and reddish-orange and red emission bands due to the ⁴G_5/2 → ⁶H_7/2 and ⁴G_5/2 → ⁶H_9/2 transitions of Sm³⁺. As the concentration of Sm³⁺ increased from 1 to 15 mol%, the intensities of two PL spectra emitted by the Dy³⁺ ions gradually decreased, while those of the three emission bands due to the Sm³⁺ ions slowly increased, thus producing the color change from white to orange. The CIE color coordinates of Gd₂WO₆:5 mol% Dy³⁺, 1 mol% Sm³⁺ phosphors were (0.406, 0.407), which was located in the warm white light region.