• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.135-138
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• 2003

The circular cavity resonator which can measure the dielectric properties of dielectrics in the V-band($50GHz{\sim}75GHz$) frequency range was designed and fabricated. Exciting and detecting of the resonator is peformed by WR15 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 53.29GHz, 12.87 and 138,000, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.470-480
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• 2011

Analog ferrite phase shifters based on rectangular waveguides which are used as component of passive phased array system have high power handling capability, but it is heavy and has high cost to fabricate. In this paper, we propose an analog ferrite phase shifter using substrate integrated waveguide(SIW), which has low cost and is easy to fabricate because it uses printed circuit board(PCB) process. The proposed structure is fabricated by using centeral dielectric material removal for inserting a ferrite bar. The measured results show that the proposed structure has not only $5.1^{\circ}$/mm phase variation but also return loss variation under 12.9 dB. Therefore, it is expected that the proposed phase shifter can plays an role to reduce weight and to has low cost on the phased array system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1136-1139
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• 2002

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz~40GHz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose permittivity is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.6
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• pp.761-767
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• 1998

The Perfectly Matched Layer(PML) provide good performance in absorption over a wide frequency range and is an appropriate ABC for waveguides with high dispersion. In this paper, a novel algorithm is proposed to improve the computational efficiency of the PML. In the input and output ports, the fields are decomposed into a series of modes, and then an appropriate ABC is applied to each mode. CPU time and memory storage requirements are greatly reduced, since the computational region is analyzed in one dimension. A WG-90 rectangular waveguide with a thick asymmetric iris is analyzed by Finite-Difference Time-Domain(FDTD) simulations with the conventional PML and the proposed one-dimensional (1-D) PML. Numerical results show that the computational efficiency is significantly improved by the proposed method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1085-1089
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• 2002

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz∼400Hz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is Performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose performance is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant TE$\sub$011/ mode, the permittivity and Q${\times}$f$\sub$0/ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.4
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• pp.29-37
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• 1974

Theoretical analysis is carried out for the curtoff wavelength characteristics of rectangular waveguide containing a step-ridge. In order to obtain the cutoff wavelength of step-rigde waveguide, an transmission matriz is formulated by the method of equivalent transverse resonance. The characteristic equation, in which the wavelength is obtainable by the numerical method, is derived from the equation. An approximate determination of the dominant mode fields in step-ridge waveguides at all frequencies has been made. Using these fields, the characteristic impedance equation is derived from power considerations. Analyzing the results of the calculations, the following characteristics are noted. The values of λ /a of TE10 mode increase with decreasing gap lengths and with increasing step width S or S , or both. Experimental results of cutoff characteristics are in good agreement with the theoretical analusis. It is shown that a waveguide within which a step-ridge is placed has a lower cutoff frequency and impedance than empty guide without it. Therefore, the role of a step-ridge guide is to broadening the bandwidth 2 to 3 times more than that of an empty guide of the same demension.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.6
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• pp.586-594
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• 2013

This paper proposes a new coupling element of microwave slot coupler for designing waveguide slot array which can reduce the effect of undesired higher order mode coupling between coupling and radiating slots in the branch waveguide. The proposed device is composed of a centered longitudinal shunt-series coupling slot at the center of broad wall shared by two crossed rectangular waveguides and an asymmetric compound iris that excites the coupling slot. We first have obtained scattering parameters for the proposed coupler by use of EM S/W tool HFSS and then extracted the parameters of T- network equivalent circuit for the coupling slot. We also have analyzed the resonant properties such as resonant length and normalized admittance by changing the geometrical dimensions. The measured results for the fabricated coupler with short-circuited block ${\lambda}_g/4$ away from the coupling slot are well agreed with the simulated ones.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.258-265
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• 1992

A low loss optical waveguide of $P_{2}O_{5}-SiO_{2}$on Si substrate is produced by using the chemical vapour deposition method of $SiO_2$ thin films used in Si technology. Propagation loss of the waveguide layer was 1.65 dB/cm as produced and reduced down to 0.1 dB/cm after heat treatment at $1100^{\circ}C$. By using laser lithography and reactive ion etching method $P_{2}O_{5}-SiO_{2}$ waveguide was produced and subsequently annealed at $1100^{\circ}C$.As a result of this annealing the shape of the waveguide core was changed from rectangular to semi-circular form, and the propagation loss was reduced as down to 0.03 dB/cm at 0.6328$\mu$m and 0.04dB/cm at 1.53$\mu$m. We think that the mechanism of the reduction in propagation loss during the heat treatment is the following: 1) The hydrogen bonding in waveguide layer, which causes absorption loss, is dissociated and diffused out. 2) The roughness of the interface and the micro-structure of the waveguide layer is removed. 3) The irregularities in the cross-sectional shape of the waveguide which was induced during the lithographic process were disappeared by flowing of the waveguide core.