• 제목/요약/키워드: Recovery Device

검색결과 354건 처리시간 0.025초

형상 기억 유연 소자의 내구성 평가에 관한 연구 (Durability of the Flexible Shape Memory Device)

  • 양희경;김해진;김대은
    • 정보저장시스템학회논문집
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    • 제11권2호
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    • pp.36-40
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    • 2015
  • The demand for flexible devices including solar cells, memories and batteries has increased rapidly over the past decades. In most flexible devices, polymer-based materials are used to enable the mechanical deformations such as bending or folding. Shape Memory Polymers (SMPs) is a high molecular compound polymer with flexibility and shape recovery characteristics. In this work, flexible shape memory device was fabricated by simply coating the conducting material, carbon nano-tube (CNT), on a shape memory polymer. Furthermore, durability of the device under various type of mechanical deformations was assessed. It is believed that the result of this work will aid in realization of a stretchable and wearable electronic device for practical applications.

열회수장치의 열교환 파이프배치형식별 열교환 성능 비교(II) (Comparision of Heat Exchanging Performance Depending on Different Arrangement of Heat Exchanging Pipe (II))

  • 서원명;강종국;윤용철;김정섭
    • 한국농공학회:학술대회논문집
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    • 한국농공학회 2001년도 학술발표회 발표논문집
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    • pp.281-285
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    • 2001
  • This study was carried out to improve the performance of heat recovery device attached to exhaust gas flue connected to combustion chamber of greenhouse heating system. Three different units were prepared for the comparison of heat recovery performance; AB-type(control unit) is exactly the same with the typical one fabricated for previous study of analyzing heat recovery performance in greenhouse heating system, other two types(C-type and D-type) modified from the control unit are different in the aspects of airflow direction(U-turn airflow) and pipe arrangement. The results are summarized as follows; 1. In the case of Type-AB, when considering the initial cost and current electricity fee required for system operation, it is expected that one or two years at most would be enough to return the whole cost invested. 2. Type-C and Type-D, basically different with Type-AB in the aspect of airflow pattern, are not sensitive to the change of blower capacity with higher than $25\;m^{3}/min$. Therefore, heat recovery performance was not improved so significantly with the increment of blower capacity. This is assumed to be that air flow resistance in high air capacity reduces the heat exchange rate as well. Never the less, compared with control unit, resultant heat recovery rate in Type-C and Type-D were improved by about 5% and 13%, respectively. 3. Desirable blower capacity for these heat recovery units experimented are expected to be about $25\;m^{3}/min$, and at the proper blower capacity, U-turn airflow units showed better heat recovery performance than control unit. But, without regard to the type of heat recovery unit, it is recommended that comprehensive consideration of system's physical factors such as pipe arrangement density, unit pipe length and pipe thickness, etc., are required for the optimization of heat recovery system in the aspects of not only energy conservation but economic system design.

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Schottky Body Diode를 집적하여 향상된 Reverse Recovery 특성을 가지는 50V Power MOSFET (50V Power MOSFET with Improved Reverse Recovery Characteristics Using an Integrated Schottky Body Diode)

  • 이병화;조두형;김광수
    • 전기전자학회논문지
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    • 제19권1호
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    • pp.94-100
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    • 2015
  • 본 논문에서는 U-MOSFET 내부의 기생 body 다이오드(PN diode)를 쇼트키 body 다이오드(Schottky body diode)로 대체한 50V급 전력 U-MOSFET을 제안하였다. 쇼트키 다이오드는 PN 다이오드와 비교 시, 역 회복 손실(reverse recovery loss)을 감소시킬 수 있는 장점을 가지고 있다. 따라서 전력 MOSFET의 기생 body 다이오드를 쇼트키 body 다이오드를 대신함으로써 역 회복 손실을 최소화 할 수 있다. 제안된 쇼트키 body 다이오드(Schottky body diode) U-MOSFET(SU-MOS)를 conventional U-MOSFET(CU-MOS)와 전기적 특성을 비교한 결과, 전달(transfer) 및 출력(output)특성, 항복(breakdown)전압 등 정적(static) 특성의 변화 없이 감소된 역 회복 손실을 얻을 수 있었다. 즉, 쇼트키 다이오드의 폭(width)이 $0.2{\mu}m$, 쇼트키 장벽 높이(Schottky barrier height)가 0.8eV일 때 첨두 역전류(peak reverse current)는 21.09%, 역 회복 시간(reverse recovery time)은 7.68% 감소하였고, 성능지수(figure of merit(FOM))는 35% 향상되었다. 제안된 소자의 특성은 Synopsys사의 Sentaurus TCAD를 사용하여 분석되었다.

유인플랫폼에서의 수중로봇 운용을 위한 진수 및 회수 체계 고찰 (Consideration of Launch and Recovery Systems for Operation of Underwater Robot from Manned Platform)

  • 이기영
    • 한국해양공학회지
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    • 제30권2호
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    • pp.141-149
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    • 2016
  • In this technical note, the issues and challenges for the launch and recovery systems (LARS) and related techniques for the operation of an underwater robot from a manned platform are considered. Various types of LARS fitted to specific manned platforms, surface or sub-surface, are surveyed and categorized. The current UUV launch and recovery systems from surface ships and submarines utilize time consuming processes. As underwater robot technologies evolve and their roles are defined, safe and effective launch and recovery methods should be developed capable of reliable and efficient operations, particularly at a high sea state. To improve the existing underwater robot capabilities, LARS technology maturation is required in the near term, leading to the ability to incorporate autonomous LARS for an underwater robot on a manned platform. In the near term, particular emphasis should be placed on UUV LARS, which are surface ship based, with submarine based systems in the long term. Furthermore, for a dedicated LARS ship, independent of the existing host ship type, particular emphasis should be given to fully utilizing the capabilities of underwater robots.

신경근전기자극에 의한 경직근의 최대 등척성 수축력 변화 (Change of the Maximal Isometric Contraction to the Spastic Muscle by NMES)

  • 임상완;이정우;김태열;송명수;최은영
    • 대한임상전기생리학회지
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    • 제2권3호
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    • pp.25-35
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    • 2004
  • The purpose of this study was compared to MTICs(maximal tolerated isometric contraction), decrement and recovery. For this, using isokinetic exercise analysis device(Biodex Medical Systems Inc., Biodex System 3PRO, USA), low rate(20 Hz) and high rate(100 Hz) NMES(neuromuscular electrical stimulation) were applied to the quadriceps muscles of fifteen patients with spastic hemiplegia caused by lesions in the central nervous system. The results were as follows: 1. It was shown to fast decrement in the middle of phase at low rate NMES and to slow decrement of MTIC response at high rate NMES(p<.01). 2. It was shown to fast recovery at high rate NMES and to slow recovery at low rate NMES in recovery tendency of MTIC(p<.01). These conclusions suggest that NMES of high rate caused to slow fatigue and fast recovery different from low rate NMES.

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고전압 MLCC 시험을 위한 에너지 회수 회로 제안 (Proposal of the Energy Recovery Circuit for Testing High-Voltage MLCC)

  • 공소정;권재현;홍대영;하민우;이준영
    • 전력전자학회논문지
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    • 제27권3호
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    • pp.214-220
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    • 2022
  • This paper proposes a test device designed for developing a high-voltage multilayer ceramic capacitor (MLCC). The proposed topology consists of an energy recovery circuit for charging/discharging capacitor, a flyback converter, and a boost converter for supplying power and a bias voltage application to the energy recovery circuit. The energy recovery circuit designed with a half-bridge converter has auxiliary switches operating before the main switches to prevent excessive current from flowing to the main switches. A prototype has been designed to verify the reliability of target capacitors following the voltage fluctuation with a frequency range below 65 kHz. To conduct high root mean square (RMS) current to the capacitor as a load, the MLCC test was conducted after the topology verification was completed through the film capacitor as a load. Through the agreement between the RMS current formula proposed in this paper and the MLCC test results, the possibility of its use was demonstrated for high-voltage MLCC development in the future.

역삼투 방식의 해수담수화 플랜트 에너지 회수 기술 (Energy Recovery Technologies for Seawater Reverse Osmosis Desalination Systems : A Review)

  • 김영민;이원태;최준석;강만곤;이상호
    • 상하수도학회지
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    • 제25권4호
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    • pp.573-579
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    • 2011
  • As rapid advances in technologies continue, seawater reverse osmosis (SWRO) desalination systems are now more energy-efficient than conventional thermal processes. Some SWRO desalination plants can achieve the specific energy consumption (SEC) below 2 kWh/$m^3$. Along with the development of new membranes and high-performance pumps, energy recovery devices (ERD), which recover the hydraulic energy of brine, have been developed to enhance energy efficiency. In this work, we reviewed general aspects of ERD technologies and their market trends. The advantages and disadvantages of various EDR technologies were compared to explore the future directions of ERD development.

여자기 공급용 AVR의 Snubber 설계 (Design of Snubber for the AVR to supply Excitor)

  • 오상록;이철승;류호선;성세진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 A
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    • pp.313-315
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    • 1994
  • In this paper, it is consider spike voltage that is generated by ignoring the recovery time of switching device, turn on and turn off time. In the same principle, this spike voltage will be applicable to diode recovery time. The spike voltage causes to break down insulation of input transformer. So, we will show how to remove spike voltage by optimizing value of R and C and using switching diode which have fast recovery time.

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COMPARISON OF PLASMA-INDUCED SURFACE DAMAGES IN VARIOUS PLASMA SOURCES

  • Yi, Dong-Hyen;Lee, Jun-Sik;Kim, Sang-Kyun;Kim, Jae-Jeong
    • 한국표면공학회지
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    • 제29권5호
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    • pp.338-344
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    • 1996
  • This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

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스위칭 전원장치가 입력변압기에 미치는 영향 (Effects of switching power supply on input transformer)

  • 오상록;김병권;성세진;이흥호;한경희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 B
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    • pp.815-817
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    • 1993
  • In this paper, it is considered spike voltage that is generated by ignoring the recovery time of switching device, turn on and turn off time. In the same principle, this spike voltage will be applicable to diode recovery time. The spike voltage causes to break down insulation of input transformer. So, we will show how to remove spike voltage by optimizing value of R and C and using switching diode which have fast recovery time.

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