• 제목/요약/키워드: Recombination Rate

검색결과 167건 처리시간 0.024초

Role of Surfaces and Their Analysis in Photovoltaics

  • Opila, Robert L.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.72-72
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    • 2011
  • Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

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Numerical Modeling and Simulations of Electrical Characteristics of Multi-layer Organic Light Emitting Diodes

  • Lee, Hyun-Jung;Lee, Yong-Soo;Park, Jae-Hoon;Choi, Jong-Sun
    • Journal of Information Display
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    • 제8권3호
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    • pp.11-16
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    • 2007
  • Theoretical simulations of spatial distribution of charge carriers and recombination rate, and J-V characteristics of the multi-layer organic light emitting diodes are carried out. Drift-diffusion current transport, field-dependent carrier mobility, exponential and Gaussian trap distribution, and Langevin recombination models are included in this computer model. The simulated results show good agreement with the experimental data confirming the validity of the physical models for organic light emitting diodes.

Hydrogen Production by the Photocatalystic Effects in the Microwave Water Plasma

  • Jang, Soo-Ouk;Kim, Dae-Woon;Koo, Min;Yoo, Hyun-Jong;Lee, Bong-Ju;Kwon, Seung-Ku;Jung, Yong-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.284-284
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    • 2010
  • Currently, hydrogen has been produced by Steam Reforming or partial oxidation reforming processes mainly from oil, coal, and natural gas and results in the production of $CO_2$. However, these are influenced greatly on the green house effect of the earth. so it is important to find the new way to produce hydrogen utilizing water without producing any environmentally harmful by-products. In our research, we use microwave water plasma and photocatalyst to improve dissociation rate of water. At low pressure plasma, electron have high energy but density is low, so temperature of reactor is low. This may cause of recombination in the generated hydrogen and oxygen from splitting water. If it want to high dissociation rate of water, it is necessary to control of recombination of the hydrogen and oxygen using photocatalyst. We utilize the photocatalytic material($TiO_2$, ZnO) coated plasma reactor to use UV in the plasma. The quantity of hydrogen generated was measured by a Residual Gas Analyzer.

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Mixed oxide 광촉매의 제조 및 광분해 효율 평가 (Preparation of the mixed oxide photocatalyst and its quantum yield.)

  • Kim, Dong H.;Lee, Tai K.;Kim, Kyung N.;Chungmoo Auh;Kim, Kwang B.;Lee, Seung W.
    • 한국에너지공학회:학술대회논문집
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    • 한국에너지공학회 1995년도 춘계학술발표회 초록집
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    • pp.45-52
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    • 1995
  • 광 촉매로 널리 알려진 TiO$_2$의 광 분해 거동의 변화를 관찰하기 위하여 Nb$_2$O$_{5}$를 첨가하여 sol-gel 용법으로 제조한 후 DCA(dichloroacetic acid) 의 광분해 효율을 측정하였다. Sol-gel process 과정에서 첨가된 Nb$_2$O$_{5}$의 농도 및 열처리 온도변화에 따른 광분해 효율을 관찰한 결과, Nb$_2$O$_{5}$를 첨가한 후 40$0^{\circ}C$에서 한시간 동안 열처리 한 광 촉매의 광분해 효율이 가장 높게 나타났다. 또한 열처리 온도와 무관하게 Nb$_2$O$_{5}$의 양이 증가할수록 광분해 효율은 감소하는 것으로 관찰되었다. 이는 excess electron 의 증가로 환원 반응 혹은 recombination rate기 증가하기 때문이라고 사료된다. 분해 대상 물질의 pH가 낮을수록 광분해 효율이 증가하는 것을 알 수 있었다.알 수 있었다.

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Quantitative Evaluation on Photocatalytic Activity of Anatase TiO2 Nanocrystals in Aqueous Solution

  • Jeon, Byungwook;Kim, Yu Kwon
    • Applied Science and Convergence Technology
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    • 제24권4호
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    • pp.96-101
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    • 2015
  • Quantitative evaluation of photocatalytic activity of oxide nanoparticles in aqueous solution is quite challenging in that the kinetic reaction rate is determined by a complicated interplay among various limiting factors such as light scattering and absorption, diffusion and adsorption of reactants in condensed liquid phase, photoexcited charge separation and recombination rate, and the exact nature of active sites determined by detailed morphology and crystallinity of nanocrystals. Here, we present our simple experimental results showing that the kinetic regime of a typical photocatalytic degradation experiment over UV-irradiated $TiO_2$ nanoparticles in aqueous solution is in that dominated by the photoactivity of $TiO_2$ and its concentration. This result lays a firm ground of using the measured kinetic reaction rate in evaluating photocatalytic efficiency of oxide nanocrystals under evaluation.

Characteristics Investigation of Organic Light Emitting Diodes Using Numerical Device Simulation

  • Lee, Yang-Soo;Park, Jae-Hoon;Choi, Jong-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.28-31
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    • 2003
  • We have investigated the electrical characteristics of the organic light emitting diodes (OLEDs) using the numerical device simulation. The current-voltage characteristics, the charge carrier concentrations, and the recombination rate profiles are presented. The simulation results of the effects of the various device parameters on the device characteristics are discussed.

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변형된 SSD법에 의한 InP 단결정 성장에 관한 연구 (A study on the InP single crystal growth by modified SSD method)

  • 송복식;문동찬;김선태
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.803-805
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    • 1992
  • The InP single crystals were grown by Modified Synthesis Solute Diffusion (SSD) method and its properties were investigated. The crystal growth rate and lattice constant $a_{\circ}$ of the grown crystals were 1.8mm/day, 5.867${\AA}$ respectively. Etch pits density along growth direction of crystal had nearly uniformity' about (2-6)x10 $cm^{-2}$ from first freeze part to last freeze part. The carrier concentration, mobility and resistivity varied from 6.25 x $10^{15}cm^{-3}$, 4218 $cm^{2}$/V sec and 1.38 x $10^{-1}{\Omega}^{-cm}$ at the first freeze part to 8.8x$10^{-3}cm^{-3}$, 4012 $cm^{2}$/V.sec and 1.43 X $10^{-1}{\Omega}^{-cm}$ at the last freeze part. In the photoluminescence at 10K, the radiation transitions were observed by the near band edge recombination, D-A pair recombination and its phonon replica in the undoped InP.

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펨토초급 극초단 펄스레이저에 의해 가열된 실리콘 내의 열전달 특성에 관한 수치해석 (Numerical Analysis on Heat Transfer Characteristics in Silicon Boated by Picosecond-to-Femtosecond Ultra-Short Pulse Laser)

  • 이성혁;이준식;박승호;최영기
    • 대한기계학회논문집B
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    • 제26권10호
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    • pp.1427-1435
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    • 2002
  • The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.