• Title/Summary/Keyword: Recombination Center

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A Large Genomic Deletion in Gibberella zeae Causes a Defect in the Production of Two Polyketides but not in Sexual Development or Virulence

  • Lee Sun-Hee;Kim Hee-Kyoung;Hong Sae-Yeon;Lee Yin-Won;Yun Sung-Hwan
    • The Plant Pathology Journal
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    • v.22 no.3
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    • pp.215-221
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    • 2006
  • Gibberella zeae (anamorph: Fusarium graminearum) is an important pathogen of cereal crops. This fungus produces a broad range of secondary metabolites, including polyketides such as aurofusarin (a red pigment) and zearalenone (an estrogenic mycotoxin), which are important mycological characteristics of this species. A screen of G. zeae insertional mutants, generated using a restriction enzyme-mediated integration (REMI) procedure, led to the isolation of a mutant (Z43R606) that produced neither aurofusarin nor zearalenone yet showed normal female fertility and virulence on host plants. Outcrossing analysis confirmed that both the albino and zearalenone-deficient mutations are linked to the insertional vector in Z43R606. Molecular characterization of Z43R606 revealed a deletion of at least 220 kb of the genome at the vector insertion site, including the gene clusters required for the biosynthesis of aurofusarin and zearalenone, respectively. A re-creation of the insertional event of Z43R606 in the wild-type strain demonstrated that the 220-kb deletion is responsible for the phenotypic changes in Z43R606 and that a large region of genomic DNA can be efficiently deleted in G. zeae by double homologous recombination. The results showed that 52 putative genes located in the deleted genomic region are not essential for phenotypes other than the production of both aurofusarin and zearalenone. This is the first report of the molecular characterization of a large genomic deletion in G. zeae mediated by the REMI procedure.

Synthesis of Metal Oxide-Coated Conductive Metal Powders and Their Application to Front Electrodes for Solar Cells (산화물이 코팅된 전도성 금속 분말의 제조 및 태양전지 전면 전극으로의 응용)

  • Park, Jin Gyeong;Lee, Young-In
    • Korean Journal of Materials Research
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    • v.24 no.9
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    • pp.502-507
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    • 2014
  • Recently, improvement in the conversion efficiency of silicon-based solar cells has been achieved by decreasing emitter doping concentration, because the lightly doped emitter can effectively prevent the recombination of electrons and holes generated by solar light irradiation. This type of emitter is very thin due to the low doping concentration, thus conductive materials (i.e., silver) used for front electrodes can easily penetrate the emitter during a firing process because of their large diffusivity in silicon. This results in junction leakage currents which might reduce cell efficiencies. In this study, $Al_2O_3$-coated Ag powders were synthesized by an ultrasonic spray pyrolysis method and applied to the conductive materials of the front electrode to control the junction leakage current. The $Al_2O_3$ shell obstructs the Ag diffusion into the emitter during the firing process. The powder is spherical with a core-shell structure and the thickness of the $Al_2O_3$ shell is tens of nanometers. Solar cells were fabricated using pure Ag powders or the $Al_2O_3$-coated Ag powder as front electrode materials, and the conversion efficiency and junction leakage current were compared to investigate the role of the $Al_2O_3$ shell during the firing processes.

Association between the XRCC3 Thr241Met Polymorphism and Gastrointestinal Cancer Risk: A Meta-Analysis

  • Sahami-Fard, Mohammad Hossein;Mayali, Ali Reza Mousa;Tajehmiri, Ahmad
    • Asian Pacific Journal of Cancer Prevention
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    • v.17 no.10
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    • pp.4599-4608
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    • 2016
  • Background: The x-ray repair cross-complementing group 3 (XRCC3) encodes a protein involved in the homologous recombination repair (HRR) pathway for double-strand DNA repair. Associations of the XRCC3 Thr241Met polymorphism with various cancers have been widely reported. However, published data on links between XRCC3 Thr241Met and gastrointestinal (GI) cancer risk are inconsistent. Objective and Methods: A meta-analysis was conducted to characterize the relationship between XRCC3 Thr241Met polymorphisms and GI cancer risk. Pooled odds ratios (ORs) and 95.0% confidence intervals were assessed using random- or fixed- effect models for 28.0 relevant articles with 30.0 studies containing 7,649.0 cases and 11,123.0 controls. Results: The results of the overall meta-analysis suggested a borderline association between the XRCC3 Thr241Met polymorphism and GI cancer susceptibility (T vs. C: OR=1.18, 9 % CI=1.0-1.4, POR=0.04; TT vs. CT+CC: OR=1.3, 95 % CI=1.0-1.6, POR=0.04). After removing studies not conforming to Hardy-Weinberg equilibrium (HWE), however, this association disappeared (T vs. C: OR=1.00, 95 % CI=0.9-1.1, POR=0.96; TT vs. CT+CC: OR=0.9, 95 % CI=0.8-1.1, POR=0.72). When stratified by ethnicity, source of controls or cancer type, although some associations between XRCC3 Thr241Met polymorphism and GI cancer susceptibility were detected, these associations no longer existed after removing studies not conforming to HWE. Conclusion: Our meta-analysis suggests that the XRCC3 Thr241Met polymorphism is not associated with risk of GI cancer based on current evidence.

Titanium dioxide by spray deposition for buried contact silicon solar cells fabrication (전극함몰형 실리콘 태양전지의 제작시 스프레이 방법에 의한 타이타늄 옥사이드층의 적용에 관한 연구)

  • A.U. Ebong;S.H. Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.263-274
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    • 1996
  • Titanium dioxide ($TiO_{2}$) film has been widely used as anti-reflection coating for solar cells but not as masking oxide for metallisation and diffusion of impurities. In this paper we have investigated the properties of $TiO_{2}$ for possible incorporation into solar cell processing sequence. Thus the use of a spray deposition system to form the $TiO_{2}$ film and the characterisation of this film to ascertain its suitability to solar cell processing. The spray-on $TiO_{2}$ film was found to be resistant to all the chemicals used in conjunction with solar cell processing. The high temperature anealing (in oxygen ambient) of the spray-on $TiO_{2}$ film resulted in an increased refractive index, which indicated the growth of an underlying thin film of $SiO_{2}$ film for the passivation of silicon surface which would reduce the recombination activities of the fabricated device. Most importantly, the successful incorporation of the $TiO{2}$ film will lead to the reduction of the many high temperature processing steps of solar cell to only one.

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Plasma Density Measurement of the Hg-Ar(1Torr) by LIF Method (LIF를 이용한 Hg-Ar(1Torr)의 플라즈마 밀도 측정)

  • Lee Jong-Chan;Park Dae-Hee;Yang Jong-Kyung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.5
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    • pp.213-217
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    • 2005
  • In this paper, we introduced a LIF measurement method and summarized the theoretical side. When an altered wavelength of laser and electric power, lamp applied electric power, we measured the relative density of the metastable state in mercury after observing a laser induced fluorescence signal of 404.8nm and 546.2nm, and confirmed the horizontal distribution of plasma density in the discharge lamp. Due to this generation, the extinction of atoms in a metastable state occurred through collision, ionization, and excitation between plasma particles. The density and distribution of the metastable state depended on the energy and density of plasma particles, intensely This highlights the importance of measuring density distribution in plasma electric discharge mechanism study The results confirmed the resonance phenomenon regarding the energy level of atoms along a wavelength change, and also confirmed that the largest fluorescent signal in 436nm, and that the density of atoms in 546.2nm ($6^3S_1 {\to} 6^3P_2$ ) were larger than 404.8nm ($6^3S_1 {\to} 6^3P_1$). According to the increase of lamp applied electric power, plasma density increased, too. When increased with laser electric power, the LIF signal reached a saturation state in more than 2.6mJ. When partial plasma density distribution along a horizontal axis was measured using the laser induced fluorescence method, the density decreased by recombination away from the center.

The Characteristics of UV Generation and Aging Materials in According to Surface Discharge (연면방전에 의한 폴리머애자의 자외선 발생과 열화특성)

  • Shong, Kil-Mok;Bang, Sun-Bae;Kim, Chong-Min;Kim, Young-Seok;Jung, Jin-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.9
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    • pp.1606-1611
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    • 2008
  • Recently, The diagnosis techniques of electric facilities are developed on live line. This paper describes the discharge characteristics of polymer insulator(EPDM A type). Keeping the facilities in good working order, the goal of this paper will provide the information to enable user to easily judge conditions of facilities on the spot. The performance of polymer insulator is assessed from the KS C IEC 60270 and CEA LWIWG-01(96)(Tracking Wheel Test). As the results, UV generation patterns of polymer insulator grow like a jellyfish shape follow the ramping voltage. Discharging UVs are detected at about 31.25% of breakdown voltage. Just then, dimension of UV image is about $0.84cm^{2}$. The dimension of max. UV image is about $297.4cm^{2}$ at $160kV(V_{bd})$. The position of UV generation due to surface discharge of polymer insulator is the center of insulator in the early, then moved the ground side and the last, UV image moved through the junction part of source side. Surface of aged polymer insulator is cracked and faded due to arc. UV absorption spectrum of polymer insulator are appeared the C-H bond of scissoring vib. at $1014cm^{-1}$ and C=O bond of recombination structure. Also, recombined UV absorption peak such as C-H, N-H, and O-H is detected at the $3321cm^{-1}$. Through the paper, there are inspection data which are the relations between surface discharge of polymer insulator and UV detecting image.

Complete Sequences of HIV-1 in a Korean Long-term Nonprogressor with HIV-1 Infection (장기간 진행하지 않는 인면역결핍바이러스(Human Immunodeficiency Virus, HIV)-1 감염자로부터 분리한 HIV-1의 전체 염기서열 결정)

  • Cho, Young-Keol;Lee, Hee-Jung;Desrosiers, Ronald C.
    • The Journal of Korean Society of Virology
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    • v.29 no.2
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    • pp.107-118
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    • 1999
  • To characterize the molecular nature of human immunodeficiency virus (HIV)-1, we determined the full-length HIV-1 sequences from cultured peripheral blood mononuclear cells (PBMC) of a Korean long-term nonprogressor (LTNP). Without antiretroviral therapy, the individual has maintained CD4+ T counts over $500/{\mu}l$ from 1989 to 1999. Plasma viral RNA copy was 992 U/ml in 1998. Culture supernatant showed positive from culture days 9. A series of 9 overlapping PCR products were amplified from cultured PBMC and cloned About 9.2 kb from R of 5' LTR to R of 3' LTR was determined by automated sequencing. The G-to-A hypermutations were shown throughout the entire region. As a result of G to A hypermutations, premature stop codon was found in integrase coding region. Though there was no recombination between subtypes over all genomes, TATA box in both LTRs was TAAAA which is detected in subtype E instead of TATAA in subtype B. And, there were nucleotide GC insertion between $NF-{\kappa}B$ I and Sp1 III, and duplication of $TCF-1{\alpha}$ in LTR. We could not find any deletion of amino acid in Nef, Gag, Pol and Env gene. This study is the first report on molecular nature of full genomes of HIV-1 isolated in Korea.

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Insertion of Carbon Interlayer Into GaN Epitaxial Layer

  • Yu, H.S.;Park, S.H.;Kim, M.H.;Moon, D.Y.;Nanishi, Y.;Yoon, E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.148-149
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    • 2012
  • This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

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A Study on the Judgment of Fire Cause of Ballast for Fluorescent Lamp (형광등용 안정기의 화재원인 판정에 관한 연구)

  • 최충석;백동현
    • Fire Science and Engineering
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    • v.14 no.3
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    • pp.1-5
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    • 2000
  • In this paper, we analyzed the fire hazard of the ballast for fluorescent lamp used as the indoor lighting. In the result of being analyzed the ballast wire by stereo microscope, many melting points were discovered, it was impossible to judge a cause with the naked eye. In the Thermal-deteriorated ballast wire, elongation structure disappeared at above $700^{\circ}$, and it only showed the enlarged appearance of the copper particle. On the metallurgical microscope of short wire, as it was confirmed the regulation of the columnar structure and the void growth at the center of boundary-face, we found that electrical short-circuit generated. Also, it was confirmed the melted part on the analysis using SEM(scanning electron microscope). Not only CuL and Cuk line that is composition factor of copper but also OK line was observed uniformly on the spectra analysis using EDX(energy dispersive x-ray spectroscopy). It means that oxygen took part in reaction at the recombination process.

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Improved and quality-assessed emission and absorption line measurements in Sloan Digital Sky Survey galaxies

  • Oh, Kyu-Seok;Sarzi, Marc;Schawinski, Kevin;Yi, Suk-Young K.
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.2
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    • pp.73.2-73.2
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    • 2011
  • We present a new database of absorption and emission-line measurements based on the entire spectral atlas from the Sloan Digital Sky Survey (SDSS) 7th data release of galaxies within a redshift of 0.2. Our work makes use of the publicly available penalized pixel-fitting(pPXF) and gas and absorption line fitting (gandalf) IDL codes, aiming to improve the existing measurements for stellar kinematics, the strength of various absorption-line features, and the flux and width of the emissions from different species of ionized gas. Our fit to the stellar continuum uses both standard stellar population models and empirical templates obtained by combining a large number of stellar spectra in order to fit a subsample of high-quality SDSS spectra for quiescent galaxies. Furthermore, our fit to the nebular spectrum includes an exhaustive list of both recombination and forbidden lines. Foreground Galactic extinction is implicitly treated in our models, whereas reddening in the SDSS galaxies is included in the form of a simple dust screen component affecting the entire spectrum that is accompanied by a second reddening component affecting only the ionised gas emission. Most notable of our work is that, we provide quality of the fit to assess reliability of the measurements. The quality assessment can be highly effective for finding new classes of objects. For example, based on the quality assessment around the Ha and [NII] nebular lines, we found approximately 1% of the SDSS spectra which classified as "galaxies" by the SDSS pipeline are in fact type I Seyfert AGN.

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