• Journal of electromagnetic engineering and science
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• 제18권3호
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• pp.182-187
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• 2018

A low profile asymmetrical fractal boundary patch antenna based on reactive impedance surface (RIS) and a mushroom unit cell (MUC) is proposed and studied for dual band operation. The sides of the square patch antenna are replaced with asymmetrical half circled fractal curves for circular polarization operation at patch mode band. The fractal patch antenna is loaded with MUC for dual band operation. The antenna radiation characteristics are investigated and illustrated with both simulated and experimental results in detail. The 10-dB return loss bandwidth are 8.48% (3.21-3.49 GHz) and 2.59% (2.30-2.36 GHz) at upper and lower resonance frequencies, respectively. The 3-dB axial ratio bandwidth is 4.26% (3.21-3.35 GHz). A close agreement between simulation data with experimental results is observed.

• 대한금속재료학회지
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• 제49권4호
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• pp.329-333
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• 2011

To develop wide-band noise absorbers with a special design for low-frequency performance, this study proposes a tin oxide (Sn-O) thin films as the noise absorbing materials in a microstrip line. Sn-O thin films were deposited on polyimide film substrates by reactive sputtering of the Sn target under flowing $O_{2}$ gas, exhibiting a wide variation of surface resistance (in the range of $10^{0}-10^{5}{\Omega}$) depending on the oxygen partial pressure during deposition. The microstrip line with characteristic impedance of $50\Omega$ was used for the measurement of noise absorption by the Sn-O films. The reflection parameter $(S_{11})$ increased with a decrease of surface resistance due to an impedance mismatch at the boundary between the film and the microstrip line. Meanwhile, the transmission parameter $(S_{21})$ diminished with a decrease of surface resistance resulting from an Ohmic loss of the Sn-O films. The maximum noise absorption predicted at an optimum surface resistance of the Sn-O films was about $150{\Omega}$. For this film, greater power absorption is predicted in the lower frequency region (about 70% at 1 GHz) than in conventional magnetic sheets of high magnetic loss, indicating that Ohmic loss is the predominant loss parameter for the conduction noise absorption in the low frequency band.

• 한국세라믹학회지
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• 제40권8호
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• pp.739-745
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• 2003

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

• 한국안전학회지
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• 제19권3호
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• pp.51-56
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• 2004

Conductive polymer blends and composites are widely used for different safety application such as electrostatic charge dissipation(ESD), electromagnetic interference(EMI) shielding, electrostatic prevention and safety chemical sensor. In order to prepare a impedance-type humidity sensor that is durable at high humidities and high temperature, electically conductive polymer blends based on diallyldimethylammonium chloride(DADMAC) and epoxy were prepared in this study. The polymer blends type conductive ionomer exhibits reaction each other DADMAC and epoxy in FT-IR and DSC analysis. The blends material was traced by new peak at 1600cm-1 and appeard improvement of thermal resistance by melting point shift. Alumina substrate was deposited a pair of gold electrodes by screen printing. The blend material were spin-coated with a thin film type on the surface of alumina substrate. The polymer bleld type sensor exhibits a linear impedance increasing better than DADMAC coated humidity sensor. Also it shows good sensitivity, low hysteresis and durability against high humidity.

• Progress in Superconductivity
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• 제3권1호
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• pp.49-55
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• 2001

Josephson junction arrays were fabricated by DC magnetron sputtering, self-aligning and reactive ion etching technique. The Al native oxide, formed by thermal oxidation, was used as the tunneling barrier of Nb/$Al-A1_2$$O_3$Nb trilayer. The arrays have 2,000 Josephson junctions with the area of $14\mu\textrm{m}$ $\times$ $46\mu\textrm{m}$. The gap voltages were in the range of 2.5 ~2.6 mV and the spread of critical current was $\pm$11~14%. When operated at 70~94 ㎓, the arrays generated zero-crossing steps up to 2.1~2.4 V. To improve transmission of microwave power and prevent diffusion of oxygen into Nb ground-plane while depositing $SiO_2$dielectric, we applied a plasma nitridation process to the Nb ground-plane. The microwave power was well propagated in Josephson junction arrays with nitridation. The difference in microwave transmission 7an be interpreted by the surface impedance change depending on nitridation.

• 센서학회지
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• 제14권5호
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• pp.343-349
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• 2005

Carbon nitride films were deposited on various substrates for humidity sensors with meshed electrode by reactive RF magnetron sputtering system. As the ratio of injected nitrogen was decreased, the sensitivity of sensor was increased. When the ratio of injected nitrogen was $50{\sim}70%$, the sample showed the best linearity. The sensor impedance changed from $95.4{\;}k{\Omega}$ to $2.1{\;}k{\Omega}$ in a relative humidity range of 5 % to 95 %. The humidity sensors based on silicon wafer revealed higher lineality and faster response than those of alumina or quartz substrates. The adsorption saturation time of the sample was about 80 sec, and its desorption time was about 90 sec.

• 한국전자파학회논문지
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• 제23권4호
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• pp.424-430
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• 2012

그라운드 안테나는 그라운드의 두 지점을 잇는 스트립에 커패시터를 넣어 설계가 된다. 본 논문에서는 이 커패시터의 실장 위치가 변할 때 안테나의 방사 성능의 변화가 발생하게 되는 이유에 대해 분석한다. 커패시터 위치를 변화시키며 그라운드 안테나의 표면 전류 분포를 관찰함으로써 커패시터의 위치가 대역폭 및 안테나 효율에 미치는 영향을 살펴보았다. 본 논문에서 사용된 그라운드 안테나는 Wi-Fi 대역에서 동작하도록 설계되었으며, 스트립의 끝 쪽에 커패시터를 위치할 경우 Wi-Fi 대역(2.4-2.5 GHz)에서 -10 dB 기준 7.2 %의 넓은 상대대역폭과 66 %의 높은 안테나 평균 효율을 얻을 수 있음을 확인하였다.

• 한국재료학회지
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• 제21권8호
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• pp.444-449
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• 2011

Nano-sized $Y_2O_3$ powders were prepared via a sol-gel method starting with $Y(NO_3)_3{\cdot}6H_2O$ (Yttrium(III) nitrate hexahydrate) and water with ethanol as a cosolvent. $Y_2O_3$ is an important rare earth oxide and has been considered for use in nuclear applications, such as ceramic materials, due to its excellent optical and refractory characteristics. It has been used as a chemically stable substrate, a crucible material for melting reactive metals, and a nozzle material for jet casting molten rare earth-iron magnetic alloys. Oxalic acid ($C_2H_2O_4$) has been adopted as a chelating agent in order to control the rate of hydrolysis and polycondensation, and ammonia was added in order to adjust the base condition. The synthesized $Y_2O_3$ powder was characterized using TG/DTA, XRD, FE-SEM, BET and Impedance Analyzer analyses. The powder changed its properties in accordance with the pH conditions of the catalyst. As the pH increases according to the FE-SEM, the grain grew and it showed that the pore size decreased while confirming the effect of the grain size. The nano-material $Y_2O_3$ powders demonstrated that the surface area was improved with the addition of oxalic acid with ammonium hydroxide.

• 전기화학회지
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• 제1권1호
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• pp.45-51
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• 1998

Ni-MH 전지의 음극으로 쓰이는 수소저장합금(MH)의 한 종류인 $AB_2$계 합금은 수소저장량이 큰 장점이 있으나 초기활성화나 싸이클 수명 및 자기방전 특성이 나쁜 단점이 있다. 본 연구에서는 Zr-Ti-V-Mn-Ni계 합금에 비화학양론적으로 Cr을 소량 첨가했을 때와 La을 첨가하여 불화처리 했을 때의 초기활성화, 싸이클 수명 및 자기방전에 미치는 영향을 조사하였다 EPMA 및 SEM을 이용하여 합금의 표면을 분석하였으며 XRD 분석으로 결정구조를 관찰하였다. 또한 합금으로 전극을 제조하여 정전류 시험법, 임피던스법과 전위주사법 등에 의해 전극특성을 조사하였다. Cr이 첨가될수록 전극표면에 안정한 산화막이 형성되어 V등의 전해질로의 용해를 막아주어 충, 방전에 따른 수명특성 및 자기방전 특성을 향상시키지만 초기 전하이동 반응이 저해되어 초기활성화 특성이 악화되었다. La을 첨가 후 불화처리하면 표면에 반응성이 좋은 입자를 형성하여 전극의 초기 활성화가 크게 향상되었다.