• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.13-20
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• 1995

To develope a high precision TiAIN thin film resistor, TiAIN films were deposited on A1$_{2}$03 substrates by reactive planar magnetron cosputtering from Ti and Al targets in an Ar-N$_{2}$ atmosphere. The characteristics of the TiAIN thin film were controlled by changing of the R.F. power on Ti and Al targets, and the N$_{2}$ partial pressure. The high precision TiAIN thin film resistor with TCR(Temperature Coefficient of Resistance) of less than 10ppm/.deg. C was obtained under the R.F. power condition of 160(w)/240(w) to Ti and Al targets at the N$_{2}$ partial pressure of 7*10$^{-5}$ Torr. The composition of these films were investigated by XRD, SEM and EDS.

• 한국표면공학회지
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• 제27권1호
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• pp.29-35
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• 1994

The effects of coating of 3$\mu\textrm{m}$ thickness on the mechanical property of alumina after heat treatment at 100$0^{\circ}C$ for 30minutes under $10^{-6}$torr vacuum was quantified in terms of modulus of rupture(MOR) using Weibull plot. While the copper coating did not change MOR of alumina due to the nonwetting behavior of Cu on $Al_2O_3$, the reactive titanium metal coating caused a noticeable 29% reduction in averaged MOr strength. This was related with the combined effects of microcracks in coating formed during heat treatment and good bonding character between Ti and $Al_2O_3$. The effect of cosputtering of Ti and Cu, bilayer coatings of Cu/Ti and Ti/Cu were also investigated. It was found that Ti, cosputtered, Cu/ti and Ti/Cu coatings reduced MOR strength of alumina in the order listed. This was correlated with the amount of Ti at coating/alumina inter-face associated with a coated layer or segregation of Ti during heat treatment.