• 한국버섯학회지
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• 제13권4호
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• pp.301-304
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• 2015

본 연구는 잎새버섯 병 재배시 적합한 배지조성비율을 구명하고자 수행되었다. 배지조성은 참나무톱밥: 옥수수피: 건비지를 건물중량 비율로 T1처리(67:11:22), T2처리(68:15:17), T3처리(74:14:12)의 3처리를 두고 시험한 결과, 발이율은 T1처리에서 72.6%, T2처리에서 72.1%로 두 처리 간 유의적 차이가 없었으나 T3처리에서는 65.8%로서 다른 두 처리에 비하여 낮았다. 이병률은 T2처리에서 4.1%, T3처리에서 3.7%인데 비하여 T1처리에서는 9.8%로 가장 높았다. 수확률은 T1처리에서 64.1%, T3처리에서 63.6%인데 비하여 T2처리에서는 70.5%로 가장 높았다. 병당 자실체 중량은 T1처리에서 85.5 g, T2처리에서 83.3 g으로 두 처리 간 유의적 차이가 없었으나 T3처리에서는 72.4 g으로 다른 두 처리에 비하여 낮았다. 입병 수 10,000병 기준으로 재배 시 수량은 T2처리에서 587 kg으로 T1처리 및 T3처리에 비하여 각각 7% 및 28%가 높았다. 따라서 잎새버섯 병재배 시 적합한 배지조성비율은 건조중량비율로 참나무톱밥: 옥수수피: 건비지가 68:15:17인 것으로 나타났다.

• 한국재료학회지
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• 제15권10호
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• pp.621-625
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• 2005

Effects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the $WC_x$ coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the $WC_x$ coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the $CH_4$ content of $Ar/CH_4$ sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the $WC_x$ coatings Increased as rf power increased. The highest hardness was obtained at a $Ar/CH_4$ concentration of $10 vol.\%$ in the sputtering gas. The hardness of the $WC_x$ film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• 한국생물환경조절학회:학술대회논문집
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• 한국생물환경조절학회 2001년도 봄 학술발표논문집
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• pp.41-42
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• 2001

The objectives of this study were to investigate the effect of the physical properties of wick on the water absorption of substrate. Physical properties of wick in this study were cotton composition, width and length. The water Infiltration rate through the wick was 0.24 ㎝/s at 90 -95% cotton content, which was faster than at 80-85% (0.13 cm/s) and 70-75% (0.08 cm/s). As the cotton content increased, the water absorption of substrate became greater : the amount of absorbed water was about 5-7g higher at 90-95% than at 80-85% and 70-75% at a wick width of 1 ㎝, the velocity of water absorption through the wick was fastest with 0.25 ㎝ㆍs/sup -1/. The amount of absorbed water was higher at 3 ㎝ than at 1 and 2 ㎝. However, the water absorption rate through the cross - sectional area of wick (g H₂O /㎠/hr) was higher at a wick width of 2 ㎝ than at those of 1 and 3 ㎝. The amount of absorbed water in the substrate was higher at 2 : 1 than at 1 : 1 (length in substrate : length out of substrate). Absorbed water amount was larger at 30-40% initial moisture content than any other treatment.

• Journal of Microbiology
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• 제35권3호
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• pp.193-199
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• 1997

From several industrial wastewaters, 14 bacterial strains which degrade benzene, toluene, o-xylene, m-xylene, or p-xylene (BTX) were obtained. These strains were characterized as to their species composition and the substrate range, kinetic parameters and the substrate interactions were investigated. Although BTX components have a similar chemical structure, isolated strains showed different substrate ranges and kinetic parameters. None of the strains could degrade all of BTX components and most of them showed an inhibition (Haldane) kinetics on BTX, BTX mixtures were removed under inhibitory substrate interactions with variation in the intensity of inhibition. For a complete degradation of BTX, a defined mixed culture containing three different types of patyways was constructed and all of the BTX components were simultaneously degraded with the totla removal rate of 225.69 mg/g biomass/h Judging from the results, the obtained mixed culture seems to be useful for the treatment of BTX-contaminated wastewater or groundwater as well as for the removal of BTX from the contaminated air stream.

• 한국표면공학회지
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• 제34권1호
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• pp.10-16
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• 2001

Recently plasma etching research has been focused on the metal surfaces in the nuclear industry. In this study, surface etching reaction of metallic Co and Mo, principal contaminants in the spent nuclear components, in CF$_4$/O$_2$, gas plasma has been experimentally investigated to look into the applicability and the effectiveness of the technique for the surface decontamination. Experimental variables are $CF_4$/$O_2$ ratio and substrate temperature between 29$0^{\circ}C$ and 38$0^{\circ}C$. Experimental results Show that the optimum gas composition is 80%CF$_4$-20%$O_2$ and the metallic Co and Mo are etched out well enough in the temperatures range. Cobalt starts to be etched above $350^{\circ}C$ and the etching rate increases with increasing substrate temperature. Maximum rate achieved at 38$0^{\circ}C$ under 220 W r.f. plasma power is 0.06 $\mu\textrm{m}$/min. On the other hand, the metallic Mo is etched easily even at low temperature and the reaction rate drastically increases as the substrate temperature goes up. Highest rate obtained under the same conditions is $1.9\mu\textrm{m}$/min. OES (Optical Emission Spectroscopy) analysis reveals that the intensities of F atom and CO molecule reach maximum at the optimum gas composition, which demonstrates that the principal reaction mechanism is fluorination and/or carbonyl reaction. It is confirmed, therefore, that dry processing technique using reactive plasma is quite feasible and applicable for the decontamination of surface-contaminated parts or equipments.

• 연구논문집
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• 통권25호
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• pp.175-184
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• 1995

Mechanical properties of the gas nitrocarburized product depend on the surface compound layer and the diffusion zone formed. The compound layer improves the wear resistance, and the corrosion resistance. Though phase composition, pore layer and growth rate of the compound layer varies according to the treatment time, temperature and the kind of the steel substrate, they are strongly influenced by the environmental gas composition. In the current study, the growth behavior of the compound layer and diffusion zone of the carbon steel and the alloy steel upon nitrocarburizing treatment at $570^{\circ}C$, and the phase composition and the variation in the growth rate of the compound layer according to the variation of the gas environment which was the medium of the nitriding and carburizing reaction were investigated.

• 한국세라믹학회지
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• 제43권7호
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• pp.433-438
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• 2006

In order to examine the working condition of melts in tin bath of float process it was investigated Sn diffusion behavior and solidification rate of melts for alkali-alkaline earth-silica PDP substrate glasses such as commercial CaO rich CS-77 glass, commercial $Al_2O_3$ rich PD-200 glass and self developed $SiO_2$ rich T-series (T-2, T-4, T-6) glasses. In the case of Sn depth and concentration created in glass surface by ion exchange between Sn and alkali, T-series showed lower value than CS-77, especially T-2 is more excellent than PD-200. The solidification rate of melts expressed by cooling time between $log{\eta}=4\;and\;7.6dPa{\cdot}s$ was low for T-series comparing with CS-77 and PD-200. Therefore, it was concluded that T-series is desirable considering forming condition in the tin bath of the float process.

• 한국표면공학회지
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• 제29권6호
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• pp.829-833
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• 1996

Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.480-480
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• 2010

In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.