• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.113-117
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• 1995

MOCVD of Cu films were carried out on gold-TiN(1000$\AA$)/Ti/Si wafers from hexafluoroacetylacetonate-Cu(l) vinyltrimethylsilane, Cu(l)(hafac)(vtms), in a small cold-wall type reactor. Effects of the substrate and bubbler temperatures on the film growth rate were studied, and a film with $\rho$=1.8$\pm$0.1$\mu$$\Omega$.cm could be deposited 150nm/min at Ts=200 and Tb=$30^{\circ}C$, respectively. The initial stage of the film formation was also investigated by in-situ laser reflectivity monitoring combined with SEM observations, based on which variations in the film properties depending on the growth conditions were discussed in terms of the nucleation rate and grain size.

• Journal of the Korean Ceramic Society
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• v.25 no.2
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• pp.161-167
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• 1988

Yttria-Stabilized Cubic Zirconia Crystals with Various Y2O3 amounts (6-15mol%) were grown by the Skull melting technique. The modeling of the nucleation at the Skull bottom and the best growth condition were studied. The abrupt changes in generator heating Power and lowering rate of crucible caused the dendritic growth in the grown crystal. The optimum condition of cubic Zirconia single crystals was obtained when the lowering rate was gradually increased. The effect of Y2O3 amounts on the perfection adn the color of the grown crystal were determined. The darkish color generated in the crystals added Y2O3 amounts over 12mol% was eliminated by the annealing in air at 1200$^{\circ}C$ for 24hrs.

• 제어로봇시스템학회:학술대회논문집
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• 1986.10a
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• pp.200-204
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• 1986

Particle size distribution in a Continuous Mixed Suspension Mixed Crystal Removal (CMSMPR) crystallizer has been analyzed using the Population Balance (PB) model. This method presents difficulties when the growth rate of crystal depends on the crystal size. Recent studies indicate that in many cases the growth rate is dependent on size when the crystal sizes are small. In this study, a Residence Time Distribution(RTD) model was proposed to take the size dependence into account together with an appropriate numerical scheme. When compared with the approximate results based on PB model, RTD model results showed improvements also a nucleation effect which is normally unimportant for steady state analysis. Start-up data for NaCl-Water-Ethanol system was compared with computed values.

• Structural Engineering and Mechanics
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• v.72 no.3
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• pp.313-327
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• 2019

Damage evolution in the form of void nucleation, propagation and coalescence is the primary cause that is responsible for the ductile failure of microalloyed steels. The Gurson-Tvergaard-Needleman (GTN) damage model has proven to be extremely robust for characterizing the microscopic damage behavior of ductile metals. Nonetheless, successful applications of the model on a given metal type are limited by the correct identification of damage parameters as well as the validation of the calculated void growth rate. The purpose of this study is two-fold. First, we aim to identify the damage parameters of the GTN model for Q345 steel (Chinese code), due to its extensive application in mechanical and civil industries in China. The identification of damage parameters is facilitated by the well-suited response surface methodology, followed by a complete analysis of variance for evaluating the statistical significance of the identified model. Second, taking notched Q345 cylinders as an example, finite element simulations implemented with the identified GTN model are performed in order to analyze their microscopic damage behavior. In particular, the void growth rate predicted from the simulations is successfully correlated with experimentally measured acoustic emissions. The quantitative correlation suggests that during the yielding stage the void growth rate increases linearly with the acoustic emissions, while in the strain-hardening and softening period the dependence becomes an exponential function. The combined experimental and finite element approach provides a means for validating simulated void growth rate against experimental measurements of acoustic emissions in microalloyed steels.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.281-289
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• 2004

The temperature hump is found to be most efficient in suppressing parasitic nucleation. With the temperature humps, there are found to be observed in undersaturations along the transport path for convective-diffusive processes ranging from $D_{AB}$ = 0.0584 $\textrm{cm}^2$/s to 0.584 $\textrm{cm}^2$/s, axial positions from 0 to 7.5 cm. With decreasing Ar = 5 to 3.5, the temperature difference is increased because of the imposed nonlinear temperature profile but the rate is decreased. For 2 $\leq$ Ar $\leq$ 3.5, the rate is increased with the aspect ratio as well as the temperature difference. Such an occurrence of a critical aspect ratio is likely to be due to the effect of sidewall and much small temperature difference. The rate is decreased exponentially with the aspect ratio for 2 $\leq$ Ar $\leq$ 10. Also, the rate is exponentially decreased with partial pressure of component B, P for 1 $\leq$ P $\leq$ 100 Torr.$ B/ $\leq$ 100 Torr.

• Tribology and Lubricants
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• v.13 no.1
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• pp.42-52
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• 1997

This paper deals with wear characteristics of ion-nitrided metal theoretically and experimentally in order to analysis of wear phenomena. Wear tests show that compound layer of ion-nitrided metal reduces wear rate when the applied wear load is mall. However, as th load becomes large, the existence of compound layer tends to increase wear rate. The residual stress at the surface of ion-nitrided metal is measured, and the internal stress distribution is calculated when the normal and tangential forces are applied to the surface of metal. Compressive residual stress is largeest at the compound layer, and decreases as the depth from the surface increases. Calculation shows that the maximum stress exists at a certain depth from the surface when normal and tangential force are applied, and that the larger the wear load is the deeper the location of maximum stress becomes. In the analysis, it is found that under small applied wear load the critical depth, where voids and cracks may be created and propagated, is located at the compound layer, as the adhesive wear, where hardness is an important factor, is created the existence of compound layer reduces the amount of wear. When the load becomes large the critical depth is located below the compound layer, and delamination, which may be explained by surface deformation, crack nucleation and propagation, is created, and the existence of compound layer increases wear rate.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.230-238
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• 2000

We present the magnetisation reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01-160 kOe/s using magneto-optic Kerr effect (MOKE). For 55 and 250 ${\AA}$ Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation A ∝ H$\^$${\alpha}$/ with ${\alpha}$=0.03∼0.05 at low sweep rates and 0.33-0.40 at high sweep rates. For the 150 ${\AA}$ Fe/InAs(001) film, ${\alpha}$ is found to be ∼0.02 at low sweep rates and ∼0.17 at high sweep rates. The differing values of ${\alpha}$ are attributed to a change of the magnetisation reversal process with increasing sweep rate. Domain wall motion dominates the magnetisation reversal at low sweep rates, but becomes less significant with increasing sweep rate. At high sweep rates, the variation of the dynamic coercivity H$\sub$c/ is attributed to domain nucleation dominating the reversal process. The results of magnetic relaxation studies for easy-axis reversal are consistent with the sweeping of one or more walls through the entire probed region (∼100 $\mu\textrm{m}$). Domain images obtained by scanning Kerr microscopy during the easy cubic axis reversal process reveal large area domains separated by zigzag walls.

• Journal of Korea Foundry Society
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• v.17 no.4
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• pp.347-355
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• 1997

It is well known that the coarse primary Si in hypereutectic Al-Si alloys deteriorate castability, machinability, and mechanical properties. So, many treatment has been tried to refine the primary Si increasing cooling rate and adding refinement agent. Therefore. the purpose of our work was the observation of the effect on the refinement of primary Si and the analysis of the trend to apply to the casting process by changing the amount of P addition and the cooling rate while fixing the temperature at $750^{\circ}C$ of P addition and the type of AlCuP. In the condition of amount of P addition was fixed, primary Si was finer as cooling rate increased but in case of cooling rate was fixed, the effect of refinement was resisted as incersed the amount of P addition. At a relatively slow cooling rate of $22^{\circ}C/sec$, refinement was governed by the amount of P addition rather than cooling rate. At elevated cooling rate of $51^{\circ}C/sec$ and $99^{\circ}C/sec$, the undercooling due to faster cooling rate promoted nucleation of primary Si rather than P addition more significantly.

• Journal of Surface Science and Engineering
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• v.48 no.2
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• pp.38-42
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• 2015

Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are one of the important material components for electronic devices as a conductor. As the size of electronic devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on $TiO_2$ substrate by using trimethyl-methyl-cyclopentadienyl-Platinum ($MeCpPtMe_3$) precursor and $O_3$ reactant. By using $O_3$ instead of $O_2$, initial nucleation rate of ALD Pt was increased on $TiO_2$ surface, resulting in formation of continuous thin Pt films. Morphologies of ALD Pt on $TiO_2$ were characterized by using Scanning Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on $TiO_2$ correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).

• Journal of the Korean Ceramic Society
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• v.18 no.1
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• pp.3-12
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• 1981

A glass-ceramics based on blast-furnace slag, with some additives to the theoretical composition in order to control properties of mother glass and the heat treatment conditions, has been investigated. The raw materials in this study were blast-furnace slag, serpentine, feldspar and quartz as mother glass ingredients. Titanium dioxide and chromite were used as the nucleating agents. Batch compositions of the prepared glasses and ceraming conditions were found by trial and error method. The optimum conditions were confirmed by analyzing several measured physical properties such as density change during heat treatment, microhardness of slag-ceramics prepared, viscosity change of glass at heat treatment temperatures, nucleation density change, dilatometric properties, differential thermal analysis, identification of the grown crystal and crystal sizes. The batch composition feasible to prepare slag-ceramics was 40% of blast-furnace slag, 25% of serpentine, 18% of feldspar and 17% of silica sand. Three percent titanium dioxide and 1% chromite of the mother glass were added as nucleating agents. The ceraming conditions under which the slag-ceramics having considerably good properties can be developed found as: "The glass was heated at 75$0^{\circ}C$ for 2 hours for nucleation, and the temperature was raised up to 1, 00$0^{\circ}C$ with a rate of 0.75$^{\circ}C$/min for crystal growth.owth.