• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.35-39
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• 2003

Using RF plasma enhanced chemical vapor deposition, amorphous carbon films were grown in pure methane plasma. Field electron emission of these films were examined at a function of deposition temperature. It was found that the electron emission current of the sample prepared at deposition temperature above $600^{\circ}C$ was considerably improved. The film grown at deposition temperature of $800^{\circ}C$ had the best threshold field of 8 V/$\mu\textrm{m}$ in this experiment. According to the results of Raman spectroscopy. growth of graphite crystallites was promoted with higher deposition temperatures. Moreover the surface morphology was abruptly changed at deposition temperature above $600^{\circ}C$. We discuss the field electron emission characteristics of amorphous carbon films with regard to the structural feature and surface morphology.