• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.348-353
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• 1997

Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.176-185
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• 1995

To improve photosensisitizing efficiency of ZnO/$H_2Pc(I)_x$ system, ZnO/$H_2Pc(I)_x$ system was dispersed in a typical photoconductive polymer of poly(9-vinylcarbazole)(PVCZ). The iodine dopant level(x) of ZnO/${\chi}-H_2Pc(I)_x$ is proportional to concentration of iodine, whereas x of ZnO/${\beta}-H_2Pc(I)_x$ decreased from the highest x=0.97 at more than $6.3{\times}10^{-3}$ M iodine solution. The Raman spectra of ZnO/${\chi}-H_2Pc(I)_x$ at 514 nm exhibited characteristic $I_3^-$ patterns in the range of 50∼550 $cm^{-1}$ at $x{\geq}0.57.$ The surface photovoltage of ZnO/${\chi}-H_2Pc(I)_{0.48}$/PVCZ was approximately 1.6 times greater than ZnO/${\chi}-H_2 Pc(I)_{0.48}$ and was 1.8 times of ZnO/${\chi}-H_2Pc(I)_{0.57}$/PVCZ at 670 nm. With ZnO/$H_2Pc(I)_x$/PVCZ, the highest iodine dopant levels showed a higher photovoltage. Therefore the injection of holes from H2Pc into PVCZ resulted in that photosensisitizing effect of ZnO/$H_2Pc(I)_x$/PVCZ system was improved compared to ZnO/$H_2Pc(I)_x$ case.

• Korean Chemical Engineering Research
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• v.55 no.3
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• pp.353-357
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• 2017

In this study, the inclusion phenomena of tetrahydrofuran + 3-hydroxytetrahydrofuran + $CH_4$ clathrate hydrates were explored via thermodynamic and spectroscopic approaches. The phase equilibria of the double hydrates - THF + $CH_4$ and 3-OH THF + $CH_4$ clathrate hydrates - were determined by pressure-temperature trace during hydrate formation and dissociation, and the result revealed that the equilibrium pressures were shifted to lower pressure region compared to pure $CH_4$ hydrate. The powder X-ray diffraction patterns revealed that the double hydrates of THF + 3-OH THF formed structure II type clathrate hydrates with $CH_4$. The dispersive Raman spectra of the double clathrate hydrates also exhibited that $CH_4$ can be trapped in both $5^{12}6^4$ and $5^{12}$ cages whereas THF and 3-OH THF were encaged in $5^{12}6^4$ cage.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.17-18
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• 2011

Plasma in liquid phase has attracted great attention in the last few years by the wide domain of applications in material processing, decomposition of organic and inorganic chemical compounds and sterilization of water. The plasma in liquid is characterized by three main regions which interact each - other during the plasma operation: the liquid phase, which supply the plasma gas phase with various chemical compounds and ions, the plasma in the gas phase at atmospheric pressure and the interface between these two regions. The most complex region, but extremely interesting from the fundamental, chemical and physical processes which occur here, is the boundary between the liquid phase and the plasma gas phase. In our laboratory, plasma in liquid which behaves as a glow discharge type, is generated by using a bipolar pulsed power supply, with variable pulse width, in the range of 0.5~10 ${\mu}s$ and 10 to 30 kHz repetition rate. Plasma in water and other different solutions was characterized by electrical and optical measurements. Strong emissions of OH and H radicals dominate the optical spectra. Generally water with 500 ${\mu}S/cm$ conductivity has a breakdown voltage around 2 kV, depending on the pulse width and the repetition rate of the power supply. The characteristics of the plasma initiated in ultrapure water between pairs of different materials used for electrodes (W and Ta) were investigated by the time-resolved optical emission and the broad-band absorption spectroscopy. The deexcitation processes of the reactive species formed in the water plasma depend on the electrode material, but have been independent on the polarity of the applied voltage pulses. Recently, Coherent anti-Stokes Raman Spectroscopy method was employed to investigate the chemistry in the liquid phase and at the interface between the gas and the liquid phases of the solution plasma system. The use of the solution plasma allows rapid fabrication of the metal nanoparticles without being necessary the addition of different reducing agents, because plasma in the liquid phase provides a reaction field with a highly excited energy radicals. We successfully synthesized gold nanoparticles using a glow discharge in aqueous solution. Nanoparticles with an average size of less than 10 nm were obtained using chlorauric acid solutions as the metal source. Carbon/Pt hybrid nanostructures have been obtained by treating carbon balls, synthesized in a CVD chamber, with hexachloro- platinum acid in a solution plasma system. The solution plasma was successfully used to remove the template remained after the mesoporous silica synthesis. Surface functionalization of the carbon structures and the silica surface with different chemical groups and nanoparticles, was also performed by processing these materials in the liquid plasma.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.1
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• pp.97-101
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• 2016

ZnO has nanostructured material because of unique properties suitable for various applications. Amongst all chemical and physics methods of synthesis of ZnO nanostructure, the hydrothermal method is attractive for its simplicity and environment friendly condition. Nanostructure ZnO thin films have been successfully synthesized on fluorine doped tin oxide (FTO) substrate using hydrothermal method. A possible growth mechanism of the various nanostructures ZnO is discussed in schematics. The prepared materials were characterized by standard analytical techniques, i.e., X-ray diffraction (XRD) and Field-emission scanning electron microscopy (SEM). The XRD study showed that the obtained ZnO nanostructure thin films are in crystalline nature with hexagonal wurtzite phase. The SEM image shows substrate surface covered with nanostructure ZnO nanrod. The UV-vis absorption spectrum of the synthesized nanostructure ZnO shows a strong excitonic absorption band at 365 nm which indicate formation nanostructure ZnO thin film. Photoluminescence spectra illustrated two emission peaks, with the first one at 424 nm due to the band edge emission of ZnO and the second broad peak centered around 500 nm possibly due to oxygen vacancies in nanostructure ZnO. The Raman measurements peaks observed at $325cm^{-1}$, $418cm^{-1}$, $518cm^{-1}$ and $584cm^{-1}$ indicated that nanostrusture ZnO thin film is high crystalline quality. We trust that nanostructure ZnO material can be effectively will be used as a highly active and stable phtocatalysis application.

• Journal of the Korean Wood Science and Technology
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• v.42 no.3
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• pp.266-274
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• 2014

To extend the understanding of the pyrolysis mechanism of wood, we have investigated wood dust charcoal and condensate of volatile organic compounds (VOC) obtained during the pyrolysis of red pine (Pinus densiflora Sieb. et Zucc.) at $180{\sim}450^{\circ}C$ using elemental analysis, IR and GC/Mass. The effect of activation process on the charcoal structure also has been studied by comparing elemental analysis and IR data of charcoal carbonated at $600^{\circ}C$ and charcoals activated at $750^{\circ}C$. The results show that pyrolysis of wood has mainly started near at $240^{\circ}C$ and its chemical components did not changed much up to $270^{\circ}C$. However, the element contents and IR spectra drastically changed at $300^{\circ}C$. The fact that IR peaks related to the aromatic ring of lignin are observed in the charcoal pyrolized at $450^{\circ}C$ indicates that a small part of lignin still remains at this temperature. The chemical structure of the activated charcoal seems almost unaffected by the activation time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.83-90
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• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.51-55
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• 2015

The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.