• Journal of Korean Neurosurgical Society
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• v.66 no.5
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• pp.511-524
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• 2023

Objective : This animal model aimed to compare the rat group that received brain irradiation and did not receive additional treatment (only saline) and the rat group that underwent brain irradiation and received Granulocyte colony stimulating factor (G-CSF) treatment. In addition, the effects of G-CSF on brain functions were examined by magnetic resonance (MR) imaging and histopathologically. Methods : This study used 24 female Wistar albino rats. Drug administration (saline or G-CSF) was started at the beginning of the study and continued for 15 days after whole-brain radiotherapy (WBRT). WBRT was given on day 7 of the start of the study. At the end of 15 days, the behavioral tests, including the three-chamber sociability test, open field test, and passive avoidance learning test, were done. After the behavioral test, the animals performed the MR spectroscopy procedure. At the end of the study, cervical dislocation was applied to all animals. Results : G-CSF treatment positively affected the results of the three-chamber sociability test, open-space test and passive avoidance learning test, cornu Ammonis (CA) 1, CA3, and Purkinje neuron counts, and the brain levels of brain-derived neurotrophic factor and postsynaptic density protein-95. However, G-CSF treatment reduced the glial fibrillary acidic protein immunostaining index and brain levels of malondialdehyde, tumor necrosis factor-alpha, nuclear factor kappa-B, and lactate. In addition, on MR spectroscopy, G-CSF had a reversible effect on brain lactate levels. Conclusion : In this first designed brain irradiation animal model, which evaluated G-CSF effects, we observed that G-CSF had reparative, neuroprotective and anti-neurodegenerative effects and had increased neurotrophic factor expression, neuronal counts, and morphology changes. In addition, G-CSF had a proven lactate-lowering effect in MR spectroscopy and brain materials.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.545-552
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• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.