• Journal of Semiconductor Engineering
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• 제1권3호
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• Journal of Electrical Engineering and Technology
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• 제12권4호
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• pp.1619-1626
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• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

• 전기학회논문지
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• 제63권9호
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• pp.1248-1252
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• 2014

In this study, we designed a signal processing module using a radiation hardened technology that can be applied to the all measurement sensors inside nuclear power plant containment. Also, for verification that it can be used for high-level radiation environment (Harsh environmental zone inside containment of NPP), we carried out evaluation tests for a designed module using a $Co^{60}$ gamma-ray source up to 12 kGy(Si). And, we had checked radiation hardening level that it has been satisfied up to 12 kGy(Si).

• Nuclear Engineering and Technology
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• 제56권1호
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• pp.189-194
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• 2024

This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 ㎛ process and verified through a test up to 230 kGy (SiO₂) at a rate of 10.46 kGy (SiO₂)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.

• 전기학회논문지
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• 제67권6호
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• pp.745-752
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• 2018

ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.

• 한국정보통신학회논문지
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• 제19권6호
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• pp.1405-1410
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• 2015

본 연구에서는 정상 운전이나 사고 시 발생되는 고방사선 환경에서 다양한 센서에 공통적으로 사용할 수 있는 내방사선 센서 신호처리 모듈을 설계하였다. 개발한 초기 모듈은 센서의 저항(R)과 정전용량(C) 값의 변화를 입력으로 받아 PWM 신호 변조방식으로 처리하도록 설계되었다. 이 모듈은 총 약 12 kGy 방사선 평가시험에서 Full-Scale 대비 ±10 % 오차범위를 가지고 있었다. 오차 발생의 주요 원인은 방사선 피폭량의 증가에 따른 공통회로 내 스위칭 소자의 열화와 이로 인한 펄스폭 변조회로의 듀티 비 증가로 분석되었다. 이 분석결과를 반영한 방사선 내성강화를 위해 방사선에 의한 특성변화를 상쇄하는 회로를 추가하여 재설계하였고, 20.7 kGy 범위의 TID 시험에서 Full-scale 대비 5% 이하 오차로 개선결과를 얻었다.

• Journal of Semiconductor Engineering
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• 제2권1호
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• pp.119-124
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• 2021

Along with the needs for feasibility in the field of space applications, interests in radiation-hardened electronics is growing rapidly. Gallium nitride (GaN)-based devices have been widely researched so far owing to superb radiation resistance. Among them, research on the most abundant protons in low earth orbit (LEO) is essential. In this paper, proton irradiation effects on parameter changes, degradation mechanism, and correlation with reliability of GaN-based devices are summarized.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 B
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• 한국정보통신학회논문지
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• 제16권10호
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• pp.2287-2292
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• 2012

본 논문에서는 Ge가 함유된 일반 단일모드 광섬유의 감마선 유입손실을 측정하였다. 방사선 선원은 $Co^{60}$ 감마선 선원을 이용하였으며, 총 4시간동안 0.5 kGy/hr, 2 kGy/hr, 8 kGy/hr의 선량률로 조사하였다. 그 결과 감마선 조사에 의한 단일모드 광섬유의 전송손실이 뚜렷하게 나타났으며, 동일 누적선량에서 선량률이 클수록 전송손실이 증가하는 선량률 효과가 나타났다. 또한 감마선 조사 종료 후 광섬유의 전송손실이 클수록 유입손실의 회복률이 증가하는 어닐링 특성을 보였다. 본 실험결과는 향후 광섬유의 내방사화 연구의 기초자료로 활용할 것이다.

• Nuclear Engineering and Technology
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• 제55권11호
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• pp.4191-4203
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• 2023

Robotics applications are greatly needed in hazardous locations, e.g., fusion and fission reactors, where robots must perform delicate and complex tasks under ionizing radiation conditions. The drawback is that some robotic parts, such as active electronics, are susceptible to radiation. It can lead to unexpected failures and early termination of the robotic operation. This paper analyses the ionizing radiation effect from 0.09 to 1.5 Gy/s in robotic components (microcontrollers, servo motors and temperature sensors). The first experiment compares the performance of various microcontroller types and their actuators and sensors, where different mitigation strategies are applied, such as using Radiation-Hardened (Rad-Hard) microcontrollers or shielding. The second and third experiments analyze the performance of a 3-Degrees of Freedom (DoF) robotic arm, evaluating its components' responses and trajectory. This study enhances our understanding and expands our knowledge regarding radiation's impact on robotic arms and components, which is useful for defining the best strategies for extending the robots' operational lifespan, especially when performing maintenance or inspection tasks in radiation environments.