• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.3
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• pp.360-367
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• 2009

In this paper, the RADANT phase scanning scheme and the transmission-type loaded line phase shifter scheme, which are applicable to the phased array systems, are studied. Using these two schemes, a theoretical method to design an electronic beam steering RADANT lens is introduced. The validity of the presented theoretical method is verified through the simplified circuit simulation results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1121-1127
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• 2010

This paper describes the equivalent circuit of $45^{\circ}$ layer, one of $11.25^{\circ}$, $22.5^{\circ}$, and $45^{\circ}$ phase shift layers, which are needed for X-band Radant lens 4-bit phase shifter. The equivalent circuit is extracted by comparing the CST's MWS results with the Agilent's ADS results for $45^{\circ}$ phase shift layer. The simulated result is compared with the measured one. Using the extracted equivalent circuit, the phase bit simulation results of 4-bit Radant lens are also presented.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.5
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• pp.644-651
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• 2009

In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.906-913
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• 2009

In this paper, the design concept and implementation method of the X-band 4-bit($22.5^{\circ}$, $45^{\circ}$, $90^{\circ}$, $180^{\circ}$ BIT) diode phase shifter in the parallel plate waveguide are introduced. The simulated results of $11.25^{\circ}$, $22.5^{\circ}$ and $45^{\circ}$ dielectric phase shift layers using CST's MWS and Agilent's ADS are presented, and the measured results are compared with the simulated ones. The simulated phase shift errors at the center frequency are $0.6^{\circ}$, $0.7^{\circ}$, and $3.5^{\circ}$, respectively and the measured phase shift errors at the center frequency are $0.6^{\circ}$, $2^{\circ}$, and $5.5^{\circ}$, respectively. Also, the MWS simulated results of $22.5^{\circ}$ BIT and $45^{\circ}$ BIT phase shifter are presented and compared with the ADS simulated ones to verify the validity of the presented design concept and implementation method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.45-51
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• 2009

The propagation characteristics in parallel plate waveguide with dielectric layer having periodic metal strip pattern are investigated. PIN diode ON/OFF states are regarded as the short and open circuit, respectively, in the simulation using CST's MWS. The $11.25^{\circ}$, $22.5^{\circ}$, and $45^{\circ}$ layers which can be used for X-band 4-bit Radant lens phase shifter, are designed. The simulated results for each dielectric layer are $11.28^{\circ}$, $23.2^{\circ}$, and $46.22^{\circ}$, respectively. Also, the equivalent circuit of each layer at the operating band is realized and simulated using Agilent's ADS. The ADS simulated results are compared with the MWS simulated ones. Measured differential phase shills at the center frequency are $9.6^{\circ}$, $22.4^{\circ}$, and $43^{\circ}$, respectively.