• Journal of the Korea Computer Graphics Society
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• v.30 no.3
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• pp.171-178
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• 2024

Exercises using a Balance Board (BB) are effective in developing balance, strengthening core muscles, and improving physical fitness and concentration. In particular, the Smart Balance Board (SBB), which integrates with various digital content, provides appropriate feedback compared to traditional balance boards, maximizing the effectiveness of the exercise. However, most systems only offer visual and auditory feedback, failing to evaluate the impact on user engagement, interest, and the accuracy of exercise postures. This study proposes an Immersive Smart Balance Board (I-SBB) that utilizes multiple sensors to enable training with various feedback mechanisms and precise postures. The proposed system, based on Arduino, consists of a gyro sensor for measuring the board's posture, a communication module for wired/wireless communication, an infrared sensor to guide the user's foot placement, and a vibration motor for tactile feedback. The board's posture measurements are smoothly corrected using a Kalman Filter, and the multi-sensor data is processed in real-time using FreeRTOS. The proposed I-SBB is shown to be effective in enhancing user concentration and engagement, as well as generating interest, by integrating with diverse content.

• Journal of KIISE:Computing Practices and Letters
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• v.9 no.4
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• pp.393-409
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• 2003

In this paper, we present a multi-task debugging environment for Qplus-T embedded-system such as internet information appliances. We will propose the structure and functions of a remote multi-task debugging environment supporting environment effective ross-development. And, we are going enhance the communication architecture between the host and target system to provide more efficient cross-development environment. The remote development toolset called Q+Esto consists to several independent support tools: an interactive shell, a remote debugger, a resource monitor, a target manager and a debug agent. Excepting a debug agent, all these support tools reside on the host systems. Using the remote multi-task debugger on the host, the developer can spawn and debug tasks on the target run-time system. It can also be attached to already-running tasks spawned from the application or from interactive shell. Application code can be viewed as C/C++ source, or as assembly-level code. It incorporates a variety of display windows for source, registers, local/global variables, stack frame, memory, event traces and so on. The target manager implements common functions that are shared by Q+Esto tools, e.g., the host-target communication, object file loading, and management of target-resident host tool´s memory pool and target system´s symbol-table, and so on. These functions are called OPEn C APIs and they greatly improve the extensibility of the Q+Esto Toolset. The Q+Esto target manager is responsible for communicating between host and target system. Also, there exist a counterpart on the target system communicating with the host target manager, which is called debug agent. Debug agent is a daemon task on real-time operating systems in the target system. It gets debugging requests from the host tools including debugger via target manager, interprets the requests, executes them and sends the results to the host.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.44-50
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• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.