• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.4C
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• pp.355-361
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• 2007

In this paper, the hop-timing estimator, which NED and ELF are adopted to, has been proposed. The estimation performance of the proposed scheme and the conventional scheme is compared through computer simulations. The simulation results show that the new system has less hop-timing error than the conventional system in partial band noise jamming channel. The lover Eb/Nj and ratio of jamming bandwidth(rho) we, the bigger performance enhancement of the proposed system is.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.37-42
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• 1998

The barrier heights and carrier densities of ZnO varistors with various compositions were estimated using C-V, J-V and $\rho$-T relations. The barrier heights obtained from C-V and J-V plots were 0.73~5.98 eV and 0.25~2.70 eV, respectively. The carrier densities estimated from C-V plots were ~$10^{18}cm^{-3}$. Acceptable values of the barrier heights and the carrier densities were obtained from $\rho$-1/T curves and the capacitances at zero bias; 0.6~0.8 eV for the barrier heights and ~$10^{17}cm^{-3}$ for carrier densities. Addition of cobalt increased the barrier height and the carrier density, while chromium slightly lowered both of them.

• Journal of Genetic Medicine
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• v.10 no.1
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• pp.13-19
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• 2013

Retinitis pigmentosa (RP) is the most common hereditary retinal disorder and is characterized by progressive retinal degeneration and decline in vision. RP comprises a heterogeneous group of disorders caused by various genetic variants. Since the first discovery of the causal mutation in the RHO gene using positional cloning, numerous mutations have been detected in more than 60 loci and 50 genes. However, causal genes have not been discovered in about 50% of cases. We attempt here to review the strategies to identify causal alleles of retinitis pigmentosa. These include conventional methods as well as state-of-the-art technologies based on next-generation sequencing.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.5
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• pp.1756-1762
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• 1991

본 연구에서는 막냉각되는 터빈블레이드에서의 열전달 계수를 측정하기 위하 여 열전달과 물질전달의 상사관계를 이용하였다.터빈블레이드의 선단을 다른 연구 에서와 마찬가지로 원봉으로 모사하였고, 원봉의 표면에 위치하고 있는 1열의 분사홀 로부터 제트가 분사될 때 분사홀 근처 및 그 하류에서의 물질 전달계수를 측정하기 위 해 나프탈렌승화법을 이용하였다. 분사홀 열의 위치를 정체점에서 하류방향으로 이 동시키면서, 물질전달계수의 변화를 연구하였고, 분사율(M=.rho.$_{j}$ U$_{j}$ /.rho.$_{\infty}$ U$_{\infty}$)의 영향도 고찰하였다.

• Journal of IKEEE
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• v.15 no.3
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• pp.255-260
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• 2011

In this paper, we propose a parallelization technique in lane detection by using Hough transform. Hough transform has a weakness that it has a lot computation quantity, because it has to compute ${\rho}$ value in all candidate ${\Theta}$ to be detected in an image. We propose an architecture of parallel processing for this transform in a multi-core environment. The parallel processing has application to Hough transform as well as noise reduction and edge detection. This proposed architecture has 5.17 times improvement in performance compare to the existing algorithm.

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4179-4184
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• 2011

The nucleophilic substitution reactions of bis(2,6-dimethylphenyl) chlorophosphate (5), containing the four ortho-methyl substituents, with X-pyridines are investigated kinetically in MeCN at $65.0^{\circ}C$. The free energy correlations for substituent X variations in the nucleophiles exhibit biphasic concave upwards with a breakpoint at a X = 3-Cl. Unusual positive ${\rho}_X$ (= +5.40) and negative ${\beta}_X$ (= -0.83) values are obtained with the weakly basic pyridines. The pyridinolysis rate of 5 is hundreds times slower compared to that of bis(phenyl) chlorophosphate because of the steric hindrance of the four ortho-methyl substituents in the two phenyl rings. Ion-pair mechanism is proposed and positive ${\rho}_X$ and negative ${\beta}_X$ values are substantiated by an imbalance of the transition state.

• Journal of The Korean Astronomical Society
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• v.8 no.1
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• pp.3-9
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• 1975

Densities of the three constituent spheroids of the same eccentricity as our earlier model of the Galaxy are assumed to be given by an analytical form of $_{{\rho}i}$(r)=$k_ie^{-m_ir^u{_i}}$, where $k_i,\;m_i$, and ${\alpha}i$ are obtained by comparing with the results of the previous model. Using three values of $_{{\rho}i}$(r) the galactic rotation curve, mass of each spheroid and the whole Galaxy are calculated, and the three dimensional density distribution in the Galaxy is also obtained. The calculated rotation curve of the model Galaxy is in good agreement with the observed curve, and the shape of the cross section of the model Galaxy given by the computed density is very similar to the inferred shape of the spiral galaxies.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.251-255
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• 2003

탄화규소 반도체에 대한 오옴성 금속 접촉 성질을 조사하기 위해 3종류의 금속 (Ni, Co, Cu)을 세척한 탄화규소 반도체 위에 직접 증착하여 전기적 성질을 조사 비교하였다. 이들 금속에 대한 오옴성 성질은 금속종류 뿐만 아니라 열처리조건에 대해서도 크게 좌우됨을 알 수 있었다. 열처리는 급속열처리 장치를 이용한 진공상태 및 환원 분위기에서 2-step 방법으로 시행하였다. 접합비 저항은 TLM 구조를 만들었으며 면저항$(R_s)$, 접촉저항$(R_c)$, 이동거리$(L_T)$, 패드간거리(d), 저항$(R_T)$ 값을 구하면 접합비저항$(\rho_c)$ 값을 구하여 알려진 계산식에 의해 추정하였다. 가장 양호한 결과는 Cu 금속에 의한 접촉 결과이었으며 접합비저항$(\rho_c)$은 $1.2\times10^{-6}{\Omega}cm^2$의 낮은 값을 얻을 수 있었다. 열처리는 진공보다 환원분위기에서 수행한 시편이 양호한 전기적 성질을 가짐을 알 수 있었다.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.17-20
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• 2008

본 논문에서는 After-market에서 자동차 헤드라이트 상 하향 빔 전환 시스템으로 주로 사용하고 있는 solenoid 방식의 여러 문제점을 개선하기 위하여 차량용 릴레이를 이용한 HID램프의 헤드라이트 상 하향 전환 컨트롤 방식를 제안하였다. 특히, 차종에 따라 달라지는 상 하향 빔 전환 입력신호에 대하여 릴레이가 일정하게 상 하향 동작을 할 수 있는 signal selector회로를 구성하고, 두 개의 램프를 relay로 전환하는 방식을 채택함으로서 그 동안 자동차 하우징 구조상 기존 H4 타입에만 국한되어 오던 차량용 HID램프의 헤드라이트 상 하향 빔 전환 시스템을 H1, H3, H7, H11, 9004, 9006, 9007 등 다른 베이스타입의 벌브에도 적용이 가능하도록 하여 우수한 범용성을 갖도록 하였다.