• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.447-450
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• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

• Korean Journal of Veterinary Research
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• v.28 no.2
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• pp.331-337
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• 1988

This paper dealt with the distribution of Salmonella (S) infection on 4 herds in Kyungju and Taegu during the period from May to October 1986. Isolated Salmonella were examined for serotypes, antimicrobial drug resistance and detection of R plasmid. The results obtained were summarised as followings: 1. Of total 4.622 samples from 4 herds, 67 Salmonella were isolated from 51 samples(1.1%), and their serovar strains were S typhimurium 6, S derby 5, S infantis 4, S bareilly 4, S dublin 3, S anatum 2, S montevideo 2 and untypable 41. 2. The isolation rate of Salmonella was higher in summer and autumn. 3. Of the 67 strains examined, 45 (67.2%) were resistant to one or more antibiotics, such as ampicillin (Am), cephalothin (Ce), chloramphenicol (Cm), rifampicin (Rf), sulfadimethoxine (Su), and tetracycline (Tc), and higher resistant to Sm (40.2%), Ce (31.3%), Am (23.9%). 4. Of the 45 resistant Salmonella strains, 44 (97.8%) harbored conjugative R plasmids and the transfer frequency of Sm (100%), Ce (95.2%), Tc (91.0%) and Su (80.0%) resistance was much higher than that of the other drug resistance. 5. The most common resistant patterns were Sm, Ce, AmCeCmSmSuTc, and AmCe. 6. In 4 herds, the incidience of drug resistance was 57.7%~100% and transfer frequency of conjugative R plasmid was 96.1%~100%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.246-249
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• 1997

Diamond thin films were deposited on Si wafer from a mixture of CE$_4$ and H$_2$ by RF Plasma CVD. The films were de77sited under the following conditions : discharge power of 500w, H$_2$ flow rate of 30sccm, chanter pressure of 20∼50Torr, and CH$_4$ concentration of 0.5∼2%. The deposition time was 30∼40 hours because of low growth rate. The deposited films were characterized by Scanning Electron Microscopy and X-ray Diffraction method.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.189-192
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• 2014

Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.5-8
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• 2007

All three buffer layers of $Y_2O_3$, YSZ, and $CeO_2$ have been deposited on the biaxially textured metal substrates using rf-sputtering method, The first 50-70nm thick $Y_2O_3$ films were grown epitaxially on biaxially textured metal substrates as a seed layer and followed by the diffusion barrier ${\sim}100nm$ thick YSZ and subsequent capping layer ${\sim}200nm$ thick $CeO_2$ deposited epitaxially on top of $Y_2O_3$ seed layer. The epitaxial orientation of all three layers were all (100) grown with rocking curve Full Width at Half Maximum(FWHM) of $4-5^{\circ}$ and in plane phi-scan FWHM of $6-8^{\circ}$ using X -ray diffraction analysis. The NiO phases formed during the $Y_2O_3$ seed layer deposition seem to degrade the crystallinity and roughen the surface morphology of the following layer observed by AFM(Atomic Force Microscopy). The buffered tapes were used as substrates for long length YBCO coated conductors with high critical current density $J_c$. The five multi-turn of metal tapes was employed to increase the thickness of films and production rate to compensate the low growth rate of rf-sputtering method.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.4
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• pp.766-771
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• 2008

As the practical range of SAW Device extended into various fields including physical sensor, chemical sensor and ID Tag, the platform for various SAW Devices is required more than ever. While SAW ID or Sensors advanced remarkably, the development of platform which applies to SAW Sensor left much to be desired. Therefore this paper represents the SAW platform in order to use SAW ID such as ID Tag or Sensors more conveniently. The SAW platform consists of a RF module which can recognize SAW ID and a main module which has a hish performance processor in order to process the response signal of SAW ID. The main module which has a high performance processor is designed by GUI environmental type to ensure that users are able to use the platform more easily. In this paper, the SAW platform, which is based on ARM9 core processor, used Windows Embedded CE 6.0 OS which brings friendly interface to users. Also the developers can make less effort to design various applications with sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of Korean Society of Rural Planning
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• v.28 no.4
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• pp.105-117
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• 2022

This study tested SVM(support vector machine), RF(random forest), and ANN(artificial neural network) machine-learning models that can predict net irrigation water requirements in paddy fields. For the Jeonju and Jeongeup meteorological stations, the net irrigation water requirement was calculated using K-HAS from 1981 to 2021 and set as the label. For each algorithm, twelve models were constructed based on cumulative precipitation, precipitation, crop evapotranspiration, and month. Compared to the CE model, the R² of the CEP model was higher, and MAE, RMSE, and MSE were lower. Comprehensively considering learning performance and learning time, it is judged that the RF algorithm has the best usability and predictive power of five-days is better than three-days. The results of this study are expected to provide the scientific information necessary for the decision-making of on-site water managers is expected to be possible through the connection with weather forecast data. In the future, if the actual amount of irrigation and supply are measured, it is necessary to develop a learning model that reflects this.

• Proceedings of the Korean Information Science Society Conference
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• 2010.06d
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• pp.185-189
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• 2010

IEEE 802.15.4는 저전력 무선 개인 네트워크(LR-WPAN, Low Rate-Wireless Personal Area Network)를 위한 표준으로 무선 센서 네트워크 기술에서 광범위하게 사용되고 있다. 그러나 IEEE 802.15.4는 멀티홉 네트워크나 여러 개의 PAN(Personal Area Network)으로 구성된 네트워크에 대해서는 상세하게 기술하고 있지 않다. 본 논문에서는 IEEE 802.15.4를 기반으로 하는 ZigBee RF4CE 네트워크에서 사용하는 multiple star 토폴로지를 주목하였다. multiple star 토폴로지처럼 여러 개의 PAN 간에 통신이 이루어질 경우, 이를 에너지 효율적으로 수행할 수 있도록 하는 비컨 간격(Beacon Interval)과 슈퍼프레임 시간(Superframe Duration)을 분석한다. 이를 위해 QualNet 시뮬레이터를 이용하여 multiple star 토폴로지 네트워크를 형성하고, 비컨 간격과 슈퍼프레임 시간을 결정하는 요소에 대해 분석하였다.