• Title/Summary/Keyword: RF-type

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A study of air-gap type FBAR device fabrication using ZnO (ZnO를 이용한 air-gap 형태의 FBAR 소자 제작에 대한 연구)

  • Park, Sung-Hyun;Lee, Soon-Beom;Shin, Young-Hwa;Lee, Neung-Heon;Lee, Sang-Hoon;Chu, Soon-Nam
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1414-1415
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    • 2006
  • Air-gap type film bulk acoustic wave resonator device using ZnO for piezoelectric layer and sacrifice layer, deposited by RF magnetron sputter with various conditions, fabricated in this study. Also, membrane$(SiO_2)$ and top and bottom electrode(both Al) of piezoelectric layer deposited by RF magnetron sputter. Using micro electro mechanical systems(MEMS) technique, sacrifice layer removed and then air-gap formed. The results of each process checked by XRD, AFM, SEM to obtain good quality device.

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A Study on electrical characteristics of New type bulk LDMOS (새로운 Bulk type LDMOSFET의 전기적 특성에 대한 연구)

  • Chung, Doo-Yun;Kim, Jong-Jun;Lee, Jong-Ho;Park, Chun-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.170-173
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    • 2003
  • In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

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Implementation of RF Oscillator Using Microstrip Split Ring Resonator (SRR) (마이크로스트립 분리형 링 공진기를 이용한 RF 발진기 구현)

  • Kim, Girae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.2
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    • pp.273-279
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    • 2013
  • In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed split ring resonator. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}$/4 microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of split ring resonator, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed split ring resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

Molecular Beam Epitaxial Growth of Oxide Single Crystal Films

  • Yoon, Dae-Ho;Yoshizawa, Masahito
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.508-508
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    • 1996
  • ;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

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RF Characteristics of Open Stubs on PES Substrate for Application to Capacitive Matching Components on Flexible MMIC

  • Yun, Young;Jeong, Jang-Hyeon;Kim, Hong-Seung;Jang, Nak-Won
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.3
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    • pp.142-145
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    • 2015
  • In this work, open stubs were fabricated on a polyether sulfone (PES) substrate, and their basic radio frequency (RF) characteristics were investigated for application to RF matching components of a flexible monolithic microwave integrated circuit (MMIC). According to the results, an open stub employing coplanar waveguide (OSCPW) on PES exhibited much lower loss than that on silicon substrate. The OSCPW with a length of $500{\mu}m$ on PES showed capacitance values of 0.031 ~ 0.044 pF from 0.5 to 50 GHz. For application to a relatively high-value capacitive matching, an open stub employing a fishbone-type transmission line (OSFTTL) was fabricated on PES, and its characteristics were investigated. The OSFTTL showed much higher capacitance values than the OSCPW due to the high effective permittivity value. Specifically, the OSFTTL on PES showed capacitance values of 0.066 ~ 0.24 pF from 0.5 to 50 GHz, which are higher than those for the open stub on silicon substrate. The above results indicate that the OSCPW and OSFTTL on PES can be effectively used for application to low/high-value capacitive matching components on microwave and millimeter wave flexible MMIC. To the best of the authors' knowledge, this work is the first report of the investigation of RF capacitive matching components on PES substrate.

pH-Controlled Synthesis of Carbon Xerogels for Coin-Type Organic Supercapacitor Electrodes (pH를 조절하여 제조한 카본제어로젤을 이용한 코인타입 유기계 슈퍼커패시터 전극)

  • Ji Chul Jung;Wonjong Jung
    • Korean Journal of Materials Research
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    • v.33 no.10
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    • pp.430-438
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    • 2023
  • In this study, we synthesized pH-controlled resorcinol-formaldehyde (RF) gels through the polymerization of two starting materials: resorcinol and formaldehyde. The prepared RF gels were dried using an acetone substitution method, and they were subsequently carbonized under nitrogen atmosphere to obtain carbon xerogels (CX_Y) prepared at different pH (Y). The carbon xerogels were utilized as active materials for coin-type organic supercapacitor electrodes to investigate the influence of pH on the electrochemical properties of the carbon xerogels. The carbon xerogels prepared at lower pH (CX_9.5 and CX_10) exhibited sufficient particle growth, with a three-dimensional network of particles during the RF gel formation, resulting in the development of abundant mesopores. Conversely, the carbon xerogels prepared at higher pH (CX_11 and CX_12) retained densely packed structures of small particles, leading to pore collapse and low specific surface areas. Consequently, CX_9.5 and CX_10 showed high specific surface areas, and provided ample adsorption sites for the formation of electric double layers with electrolyte ions. Moreover, the three-dimensional particle network in CX_9.5 and CX_10 significantly enhanced electrical conductivity. The presence of well-developed mesopores in these materials further facilitated the effective transport of electrolyte ions, contributing to their superior performance as organic supercapacitor electrodes. This study confirmed that pH-controlled carbon xerogels are one of the promising active materials for organic supercapacitor electrodes. Furthermore, we concluded that pH during RF gel formation is a crucial factor determining the electrode performance of the carbon xerogels, highlighting the need for precise pH control to obtain high-performance carbon xerogel electrodes.

Measurement of Grain Moisture Content using RF Impedance (I) - Electrical Properties of Grain - (고주파 임피던스를 이용한 곡류의 함수율 측정에 관한 연구 (I) - 곡류의 전기적 특성 구명 -)

  • 김기복;노상하
    • Journal of Biosystems Engineering
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    • v.24 no.2
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    • pp.123-134
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    • 1999
  • The electrical properties such as dielectric constant, dielectric loss factor and AC conductivity of grain were presented to measure the moisture content of grain using RF impedance. At frequency ranging from 1 to 10MHz and room temperature, $20^{\circ}C$, vector network analyzer(HP4195) and coaxial type sample holder were used to analyze the electrical properties of paddy(11∼24%w.b.), brown rice(11∼18%w.b.), barley(11∼21%w.b.) and wheat(11∼23%w.b.) depending on the moisture content, frequency and bulk density. The dielectric constant and AC conductivity of grain samples increased with moisture content and bulk density. The dielectric constants decreased with frequency and could be expressed as function of the moisture density(decimal moisture $content{\times}bulk$ density).

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The Properties of RF Sputtered Zirconium Oxide Thin Films at Different Plasma Gas Ratio

  • Park, Ju-Yun;Heo, Jin-Kook;Kang, Yong-Cheol
    • Bulletin of the Korean Chemical Society
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    • v.31 no.2
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    • pp.397-400
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    • 2010
  • Zirconium oxide thin films deposited on the p-type Si(100) substrates by radio-frequency (RF) reactive magnetron sputtering with different plasma gas ratios have been studied by using spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The deposition of the films was monitored by the oxygen gas ratio which has been increased from 0 to 80%. We found that the thickness and roughness of the zirconium oxide thin films are relatively constant. The XRD revealed that the deposited thin films have polycrystalline phases, Zr(101) and monoclinic $ZrO_2$ ($\bar{1}31$). The XPS result showed that the oxidation states of zirconium suboxides were changed to zirconia form with increasing $O_2$ gas ratio.

Preparation of Large Area Plasma Source by Helical Resonator Arrays (Helical Resonator 배열을 통한 대면적 고밀도 Plasma Source)

  • 손민영;김진우;박세근;오범환
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.282-285
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    • 2000
  • Four helical resonators are distributed in a 2 ${\times}$ 2 array by modifying upper part of the conventional reactive ion etching(RIE) type LCD etcher in order to prepare a large area plasma source. Since the resonance condition of the RF signal to the helical antenna, one RF power supply is used for delivering the power efficiently to all four helical resonators without an impedance matching network Previous work of 2 ${\times}$ 2array inductively coupled plasma(ICP)requires one matching circuit to each ICP antenna for more efficient power deliverly Distributions of ion density and electron temperature are measured in terms of chamber pressure, gas flow rate and RF power . By adjusting the power distribution among the four helical resonator units, argon plasma density of higher than 10$\^$17/㎥ with the uniformity of better than 7% can be obtained in the 620 ${\times}$ 620$\textrm{mm}^2$ chamber.

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Surface properties of Nb oxide thin films prepared by rf sputtering

  • Park, Ju-Yeon;Gang, Yong-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.306.2-306.2
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    • 2016
  • Niobium oxide thin films were synthesized by reactive rf magnetron sputtering. The target was metallic niobium with 2 inch in diameter and the substrate was n-type Si wafer. To control the surface properties of the films, Nb oxide thin films were obtained at various mixing ratios of argon and oxygen gases. Nb oxide thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The result of alpha step showed that the thickness of Nb oxide thin films were decreased with increasing the oxygen gas ratios. SEM images showed that the granular morphology was formed at 0% of oxygen gas ratio and then disappeared at 20 and 75% of oxygen gas ratio. The amorphous Nb oxide was observed by XRD at all films. The oxidation state of Nb and O were studied with high resolution Ni 2p and O 1s XPS spectra. And the change in the chemical environment of Nb oxide thin films was investigated by XPS with Ar+ sputtering.

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