• Journal of Korea Multimedia Society
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• v.21 no.9
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• pp.1068-1075
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• 2018

We propose a method for driving loudspeakers from class D audio power amplifiers in current mode, instead of in conventional voltage mode, which was impossible with the feedback circuitry. Unlike analog audio amplifiers, Class D audio power amplifiers have signal delay between the input and output signals, which makes it difficult to apply the feedback circuitry for current-mode driving. The idea of the pre-distortion scheme used for the compensation of the non-linearity of RF power amplifiers is adapted to remedy the impedance variation effect of the loudspeakers for current driving. The method uses the speaker model for the pre-distorter to compensate for the speaker impedance variation with frequency. The simulation and test results confirms the validity of the proposed method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.4
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• pp.381-388
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• 2015

In this paper, a wireless video streaming system is designed and implemented for TV white space applications. It consists of a RF transceiver module, a digital modem, a camera, and a LCD screen. A VGA resolution video is captured by a camera, modulated by modem, and transmitted by RF transceiver module, and finally displayed at a destination 2.6-inch LCD screen. The RF transceiver is based on direct-conversion architecture. Image leakage is improved by low pass filtering LO, which successfully covers the TVWS. Also, DC offset problem is solved by current steering techniques which control common mode level at DAC output node. The output power of the transmitter and the minimum sensitivity of the receiver is +10 dBm and -82 dBm, respectively. The channel bandwidth is tunable among 6, 7 and 8 MHz according to regulations and standards. Digital modem is realized in Kintex-7 FPGA. Data rate is 9 Mbps based on QPSK and 512ch OFDM. A VGA video is successfully streamed through the air by using the developed TV white-space RF communication module.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1550-1551
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• 2006

An L-band linear accelerator system for e-beam sterilization is under design for bio-technology application. The klystron-modulator system as RF microwave source has an important role as major components to offer the system reliability for long time steady state operation. A PFN line type pulse generator with a peak power of 71.5-MW, $7{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present a system overview and initial design results of the high power pulse transformer.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1079-1081
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• 2007

An L-band Linear Accelerator System for E-beam sterilization is under construction for bio-technology application. The klystron-modulator system as an RF microwave source has an important role as major components to offer the system reliability for long time steady-state operations. A PFN line type pulse generator with a peak power of 71.5-MW, $7\;{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7\;{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present measurements and its analysis on the design parameters, and an initial test result as well as a design concept on the high-power pulse transformer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.71-78
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• 1994

We have developed GaAs power metal semiconductor field effect transistors (MESFETs) for 4.7V operation under 900 MHz using a low-high deped structures grown by molecular beam epitaxy (MBE). The fabricted MESFETs with a gate widty of 7.5 mm and a gate length of 1.0.mu.m show a saturated drain current (Idss) of 1.7A and an uniform transconductance (Gm) of around 600mS, for gate bias ranged from -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to be higher than 25 V. The measured rf characteristics of the MESFETs at a frequency of 900 MHz are the output power of 31.4 dBm and the power added efficiency of 63% at a drain bias of 4.7 V.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.101-103
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• 2018

This paper describes -40kV high voltage solid state pulse power modulator (SSPPM) for driving a magnetron, which is used as a RF power source of LINAC for cancer treatment systems. In case of the medical LINAC, small size and light weight are required. The SSPPM is 92 liters in size and weighs 50 kg. In this paper, S-band 2.6 MW magnetron load experiment is conducted and impedance matching was applied to obtain a smooth output current. Finally, the experimental results is discussed and the reliability of SSPPM is verified.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.117-123
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• 2002

This paper describes the design for the resistive FET mixer with low If for the 4-Ch DBF(Digital Beam Forming) receiver This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(If) considered in this research are 2.09 GHz, 2.08 CHz and 10 MHz, respectively. This mixer is composed of band pass filter, a low pass filter and a DC bias circuit. Super low noise HJ FET of NE3210S01 is considered in design. The RE input power, LO input power and Vcs are used -10 dBm, 6 dBm and -0.4 V, respectively. In the 4-Ch resistive FET mixer, the measured If and harmonic components of 10 MHe, 20 MHz and 2.087 CHz are about -19.2 dBm, -66 dBm and -48 dBm, respectively The If output power observed at each channel of 10 MHz is about -19.2 dBm and it is higher 28.8 dBm than the maximum harmonic component of 2.087 CHz. Each If output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.197-200
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• 2005

This paper presents the design of a broadband hybrid mixer using dual-gate FET topology with a low-pass filter which improves return loss of output to isolate RF and LO signal. The low-pass filter shows the isolation whose RF and LO signal is better than 40 dBc at 2 GHz and 5 GHz band. The dual-gate mixer which has been designed by using cascade topology operates when the lower FET is biased in linear region and the upper FET is in saturation. The input matching circuit has been designed to have conversion gain from 2 GHz to 6 GHz. The designed mixer with low-pass filter shows the conversion gain of better than 7 dB from 2 GHz to 6 GHz at a low LO power level of 0 dBm with the fixed IF frequency of 21.4 MHz.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1391-1392
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• 2008

The modulation quality of the I/Q modulator in a wireless transmitter usually affects system performance and it mostly depends on both a nonlinearity and a distortion, from the third order intermodulation(IM3) signal and the imperfection features such as an input amplitude error and a local phase error, respectively. This paper focused on how much the Single Sideband Ratio(SSR), which indicates the signal distortion, changes according to the variation of the imperfection features. Since a desired signal, side band and IM3 signals at the I/Q modulator output are also represented with those power series coefficients and the imperfection features, the effects of the imperfection features on SSR can be clearly analyzed.